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SQM120N04-1M9-GE3-VB Product details
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1. **SQM120N04-1M9-GE3-VB Product Introduction**
**SQM120N04-1M9-GE3-VB** is a **single N-channel MOSFET** in **TO263 package**, designed for high-power and high-efficiency switching applications. Its maximum drain-source voltage (VDS) is **40V** and its maximum drain current (ID) is **150A**, which is suitable for power systems that handle high currents and require low power losses. This MOSFET adopts **Trench technology** and has an extremely low on-resistance (RDS(ON)=2mΩ) at **VGS=10V**, which greatly reduces switching losses and heat generation, and provides extremely high efficiency. With its excellent conductive characteristics, **SQM120N04-1M9-GE3-VB** performs well in applications that require fast switching and high current support.
**SQM120N04-1M9-GE3-VB** is a **single N-channel MOSFET** in **TO263 package**, designed for high-power and high-efficiency switching applications. Its maximum drain-source voltage (VDS) is **40V** and its maximum drain current (ID) is **150A**, which is suitable for power systems that handle high currents and require low power losses. This MOSFET adopts **Trench technology** and has an extremely low on-resistance (RDS(ON)=2mΩ) at **VGS=10V**, which greatly reduces switching losses and heat generation, and provides extremely high efficiency. With its excellent conductive characteristics, **SQM120N04-1M9-GE3-VB** performs well in applications that require fast switching and high current support.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
2. **Detailed parameter description**
- **Model**: SQM120N04-1M9-GE3-VB
- **Package type**: TO263
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- **2.5mΩ** @ VGS = 4.5V
- **2mΩ** @ VGS = 10V
- **Maximum drain current (ID)**: 150A
- **Technology**: Trench technology
- **Model**: SQM120N04-1M9-GE3-VB
- **Package type**: TO263
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- **2.5mΩ** @ VGS = 4.5V
- **2mΩ** @ VGS = 10V
- **Maximum drain current (ID)**: 150A
- **Technology**: Trench technology
Domain and module applications：
3. **Application fields and module examples**
**SQM120N04-1M9-GE3-VB** is widely used in systems requiring high power and high efficiency due to its high current handling capability and extremely low on-resistance. The following are the main application fields and modules of this MOSFET:
#### a) **Power conversion module**
In **power conversion modules** (such as DC-DC converters, AC-DC power modules, etc.), **SQM120N04-1M9-GE3-VB** acts as a **power switch** element, which can effectively control the flow of current and achieve efficient power conversion. Its low on-resistance and high current handling capability enable it to provide higher efficiency in high-frequency switching power supplies, reduce energy loss, and improve the overall performance of the system.
#### b) **Power Tools and Motor Drive Systems**
In **Power Tools** and **Motor Drive Systems**, **SQM120N04-1M9-GE3-VB** can be used to control the current flow of **Motor**, especially suitable for driving high-power motors. The high current carrying capacity (150A) of this MOSFET can ensure the start-up and efficient operation of power tools, provide continuous torque output, and is suitable for application scenarios requiring high power and fast response.
#### c) **Inverter and Solar Applications**
In **Solar Inverters**, **SQM120N04-1M9-GE3-VB** can be used for **DC-AC conversion**, converting the direct current generated by solar panels into alternating current. Its low on-resistance (2mΩ) reduces energy loss and improves conversion efficiency, allowing solar systems to operate with low loss and high efficiency.
#### d) **Battery Management System (BMS)**
In **Battery Management System (BMS)**, **SQM120N04-1M9-GE3-VB** acts as a switching element to quickly and efficiently manage the battery charge and discharge process. Its high current carrying capacity enables it to handle the current of large-capacity battery packs, ensure healthy battery management and long-term use, and prevent problems such as overcharging and over-discharging.
#### e) **Electric Vehicles and Hybrid Vehicles**
In **Electric Vehicles (EV)** and **Hybrid Vehicles (HEV)**, **SQM120N04-1M9-GE3-VB** can be used as a driving MOSFET for the motor to provide efficient motor control. Its low RDS(ON) characteristics ensure efficient use of battery energy, reduce heat loss, and improve overall drive efficiency, making it suitable for electric vehicle systems with high-speed response and high power requirements.
#### f) **Uninterruptible Power Supply (UPS) System**
In the **UPS (Uninterruptible Power Supply)** system, **SQM120N04-1M9-GE3-VB** can be used as a **power switching element** to ensure that backup power can be quickly provided when the power is interrupted. Its high current carrying capacity enables it to support the operation of high-load equipment and ensure that the equipment is powered on continuously, which is suitable for critical systems that require stable power supply.
#### g) **High-efficiency Power Adapter**
**SQM120N04-1M9-GE3-VB** can be widely used in **high-efficiency power adapters**, especially small high-power power adapters, which can achieve higher conversion efficiency and reduce heat loss. This is especially important for the power systems of smart devices, consumer electronics and high-performance computing devices.
#### h) **Smart Home System**
In **Smart Home System**, **SQM120N04-1M9-GE3-VB** can be used for power management of various high-power electronic devices, such as smart lighting systems, home appliance power control, etc. Its excellent switching performance and low on-resistance make it very suitable for high-efficiency power conversion and energy management in smart homes.
### Summary
**SQM120N04-1M9-GE3-VB** is a high-efficiency **N-channel MOSFET** with **very low on-resistance (2mΩ)** and **high current carrying capacity (150A)**, which is very suitable for **power conversion, DC-DC converters, motor drives, inverters, solar applications, battery management systems, electric vehicles** and other high-power and high-efficiency systems. With its **Trench technology**, it reduces energy loss while ensuring high efficiency, and is an ideal choice for a variety of high-efficiency power and drive applications.
**SQM120N04-1M9-GE3-VB** is widely used in systems requiring high power and high efficiency due to its high current handling capability and extremely low on-resistance. The following are the main application fields and modules of this MOSFET:
#### a) **Power conversion module**
In **power conversion modules** (such as DC-DC converters, AC-DC power modules, etc.), **SQM120N04-1M9-GE3-VB** acts as a **power switch** element, which can effectively control the flow of current and achieve efficient power conversion. Its low on-resistance and high current handling capability enable it to provide higher efficiency in high-frequency switching power supplies, reduce energy loss, and improve the overall performance of the system.
#### b) **Power Tools and Motor Drive Systems**
In **Power Tools** and **Motor Drive Systems**, **SQM120N04-1M9-GE3-VB** can be used to control the current flow of **Motor**, especially suitable for driving high-power motors. The high current carrying capacity (150A) of this MOSFET can ensure the start-up and efficient operation of power tools, provide continuous torque output, and is suitable for application scenarios requiring high power and fast response.
#### c) **Inverter and Solar Applications**
In **Solar Inverters**, **SQM120N04-1M9-GE3-VB** can be used for **DC-AC conversion**, converting the direct current generated by solar panels into alternating current. Its low on-resistance (2mΩ) reduces energy loss and improves conversion efficiency, allowing solar systems to operate with low loss and high efficiency.
#### d) **Battery Management System (BMS)**
In **Battery Management System (BMS)**, **SQM120N04-1M9-GE3-VB** acts as a switching element to quickly and efficiently manage the battery charge and discharge process. Its high current carrying capacity enables it to handle the current of large-capacity battery packs, ensure healthy battery management and long-term use, and prevent problems such as overcharging and over-discharging.
#### e) **Electric Vehicles and Hybrid Vehicles**
In **Electric Vehicles (EV)** and **Hybrid Vehicles (HEV)**, **SQM120N04-1M9-GE3-VB** can be used as a driving MOSFET for the motor to provide efficient motor control. Its low RDS(ON) characteristics ensure efficient use of battery energy, reduce heat loss, and improve overall drive efficiency, making it suitable for electric vehicle systems with high-speed response and high power requirements.
#### f) **Uninterruptible Power Supply (UPS) System**
In the **UPS (Uninterruptible Power Supply)** system, **SQM120N04-1M9-GE3-VB** can be used as a **power switching element** to ensure that backup power can be quickly provided when the power is interrupted. Its high current carrying capacity enables it to support the operation of high-load equipment and ensure that the equipment is powered on continuously, which is suitable for critical systems that require stable power supply.
#### g) **High-efficiency Power Adapter**
**SQM120N04-1M9-GE3-VB** can be widely used in **high-efficiency power adapters**, especially small high-power power adapters, which can achieve higher conversion efficiency and reduce heat loss. This is especially important for the power systems of smart devices, consumer electronics and high-performance computing devices.
#### h) **Smart Home System**
In **Smart Home System**, **SQM120N04-1M9-GE3-VB** can be used for power management of various high-power electronic devices, such as smart lighting systems, home appliance power control, etc. Its excellent switching performance and low on-resistance make it very suitable for high-efficiency power conversion and energy management in smart homes.
### Summary
**SQM120N04-1M9-GE3-VB** is a high-efficiency **N-channel MOSFET** with **very low on-resistance (2mΩ)** and **high current carrying capacity (150A)**, which is very suitable for **power conversion, DC-DC converters, motor drives, inverters, solar applications, battery management systems, electric vehicles** and other high-power and high-efficiency systems. With its **Trench technology**, it reduces energy loss while ensuring high efficiency, and is an ideal choice for a variety of high-efficiency power and drive applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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