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SQM120N04-1m7L-GE3-VB Product details
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Product Introduction
The SQM120N04-1m7L-GE3-VB is a high-performance N-type MOSFET in a TO263 package with ultra-low on-resistance (RDS(ON) = 1.4mΩ @ VGS = 10V) and extremely high leakage current carrying capacity (ID = 280A). It is manufactured using Trench technology and is designed for high-current, high-power applications, which can significantly reduce power losses and improve power transmission efficiency. With its ultra-low on-resistance and extremely high current carrying capacity, the SQM120N04-1m7L-GE3-VB is widely used in high-efficiency power systems, electric vehicles (EVs), industrial controls, and battery management systems.
The SQM120N04-1m7L-GE3-VB is a high-performance N-type MOSFET in a TO263 package with ultra-low on-resistance (RDS(ON) = 1.4mΩ @ VGS = 10V) and extremely high leakage current carrying capacity (ID = 280A). It is manufactured using Trench technology and is designed for high-current, high-power applications, which can significantly reduce power losses and improve power transmission efficiency. With its ultra-low on-resistance and extremely high current carrying capacity, the SQM120N04-1m7L-GE3-VB is widely used in high-efficiency power systems, electric vehicles (EVs), industrial controls, and battery management systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 280A | 1.4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 280A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 280A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package type**: TO263
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 1.4mΩ @ VGS = 10V
- 1.68mΩ @ VGS = 4.5V
- **Maximum leakage current (ID)**: 280A
- **Technology**: Trench
- **Maximum power loss**: Approximately 14.7W (assuming maximum current and on-resistance)
- **Maximum junction temperature**: 150°C
- **Operating temperature range**: -55°C to 150°C
- **Quiescent leakage current (IDSS)**: ≤ 1μA @ VDS = 40V
- **Input capacitance (Ciss)**: Approx. 4000pF @ VGS = 0V
- **Output capacitance (Coss)**: Approx. 300pF @ VDS = 40V
- **Junction-to-case thermal resistance**: Approx. 62.5°C/W
- **Package type**: TO263
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 1.4mΩ @ VGS = 10V
- 1.68mΩ @ VGS = 4.5V
- **Maximum leakage current (ID)**: 280A
- **Technology**: Trench
- **Maximum power loss**: Approximately 14.7W (assuming maximum current and on-resistance)
- **Maximum junction temperature**: 150°C
- **Operating temperature range**: -55°C to 150°C
- **Quiescent leakage current (IDSS)**: ≤ 1μA @ VDS = 40V
- **Input capacitance (Ciss)**: Approx. 4000pF @ VGS = 0V
- **Output capacitance (Coss)**: Approx. 300pF @ VDS = 40V
- **Junction-to-case thermal resistance**: Approx. 62.5°C/W
Domain and module applications：
Applicable fields and modules:
1. **High-efficiency power conversion and power management**:
SQM120N04-1m7L-GE3-VB performs well in high-efficiency power conversion systems, especially for DC-DC converters, AC-DC power modules, etc. Due to its low RDS(ON) and extremely high current carrying capacity, it can effectively reduce power loss and improve conversion efficiency, and is widely used in data center power supply, server power supply and communication equipment.
2. **Electric Vehicle (EV) and Battery Management System**:
This MOSFET is suitable for battery management and power control systems of electric vehicles (EV). Due to its high current carrying capacity and low on-resistance, it can provide efficient power conversion during battery charge and discharge management. In addition, SQM120N04-1m7L-GE3-VB can also be used in the drive circuit and inverter of electric vehicles to ensure stable operation of the system.
3. **Industrial Automation and Motor Drive**:
In industrial automation systems, the SQM120N04-1m7L-GE3-VB can be used as a motor drive controller and high-efficiency power module. It is suitable for high-load motor control, power transmission and power distribution systems, such as industrial robots, automated production lines, and adjustable speed motors. Its ultra-low on-resistance enables the system to operate efficiently under high loads and reduce heat generation.
4. **Energy Storage Systems and Solar Inverters**:
In energy storage systems, the SQM120N04-1m7L-GE3-VB can be used in energy storage battery charge and discharge management, DC-DC converters and inverters to provide efficient power conversion. Especially in solar photovoltaic systems, this MOSFET can be used in photovoltaic inverters to ensure efficient transmission and conversion of energy, further improving the overall performance of the system.
5. **High-frequency power amplifier and RF applications**:
Due to its extremely low on-resistance and high efficiency, the SQM120N04-1m7L-GE3-VB is also suitable for high-frequency power amplifier and RF applications. It can provide stable performance in high-power, high-frequency signal transmission, which is commonly found in communication equipment, broadcasting equipment and radar systems.
6. **Battery-powered devices and portable power supplies**:
In portable power devices, the SQM120N04-1m7L-GE3-VB is used in battery power management systems to effectively manage the battery charging and discharging process. Due to its high current carrying capacity, it can support higher-power devices, providing longer use time and higher efficiency for mobile devices, power tools, portable power supplies and other battery-driven devices.
7. **LED driver and high-efficiency lighting system**:
SQM120N04-1m7L-GE3-VB is also widely used in LED driver power supplies, especially in lighting systems that require high efficiency and low power consumption. It can provide stable power for LED modules with extremely low on-resistance and high current capability, and is widely used in commercial, industrial and home lighting fields.
1. **High-efficiency power conversion and power management**:
SQM120N04-1m7L-GE3-VB performs well in high-efficiency power conversion systems, especially for DC-DC converters, AC-DC power modules, etc. Due to its low RDS(ON) and extremely high current carrying capacity, it can effectively reduce power loss and improve conversion efficiency, and is widely used in data center power supply, server power supply and communication equipment.
2. **Electric Vehicle (EV) and Battery Management System**:
This MOSFET is suitable for battery management and power control systems of electric vehicles (EV). Due to its high current carrying capacity and low on-resistance, it can provide efficient power conversion during battery charge and discharge management. In addition, SQM120N04-1m7L-GE3-VB can also be used in the drive circuit and inverter of electric vehicles to ensure stable operation of the system.
3. **Industrial Automation and Motor Drive**:
In industrial automation systems, the SQM120N04-1m7L-GE3-VB can be used as a motor drive controller and high-efficiency power module. It is suitable for high-load motor control, power transmission and power distribution systems, such as industrial robots, automated production lines, and adjustable speed motors. Its ultra-low on-resistance enables the system to operate efficiently under high loads and reduce heat generation.
4. **Energy Storage Systems and Solar Inverters**:
In energy storage systems, the SQM120N04-1m7L-GE3-VB can be used in energy storage battery charge and discharge management, DC-DC converters and inverters to provide efficient power conversion. Especially in solar photovoltaic systems, this MOSFET can be used in photovoltaic inverters to ensure efficient transmission and conversion of energy, further improving the overall performance of the system.
5. **High-frequency power amplifier and RF applications**:
Due to its extremely low on-resistance and high efficiency, the SQM120N04-1m7L-GE3-VB is also suitable for high-frequency power amplifier and RF applications. It can provide stable performance in high-power, high-frequency signal transmission, which is commonly found in communication equipment, broadcasting equipment and radar systems.
6. **Battery-powered devices and portable power supplies**:
In portable power devices, the SQM120N04-1m7L-GE3-VB is used in battery power management systems to effectively manage the battery charging and discharging process. Due to its high current carrying capacity, it can support higher-power devices, providing longer use time and higher efficiency for mobile devices, power tools, portable power supplies and other battery-driven devices.
7. **LED driver and high-efficiency lighting system**:
SQM120N04-1m7L-GE3-VB is also widely used in LED driver power supplies, especially in lighting systems that require high efficiency and low power consumption. It can provide stable power for LED modules with extremely low on-resistance and high current capability, and is widely used in commercial, industrial and home lighting fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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