SQM120N04-03-GE3-VB Product details
Product introduction:
SQM120N04-03-GE3-VB is a high-performance **N-Channel MOSFET** in TO263 package with low on-resistance (RDS(ON)) and high current carrying capacity (ID), making it very suitable for high-efficiency power management and power regulation applications. The maximum drain voltage (VDS) of this MOSFET is 40V, the maximum gate-source voltage (VGS) is ±20V, and the maximum drain current (ID) is 150A. It supports a higher operating current density and is widely used in circuit designs such as load switching, power conversion, and motor drive. The switching characteristics are optimized using **Trench** technology, which can provide lower conduction losses and faster switching speeds, and is suitable for high-efficiency power electronic equipment.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
- **Package**: TO263
- **Configuration**: Single-N-Channel
- **VDS**: 40V
- **VGS**: ±20V
- **Vth**: 3V
- **RDS(ON)**:
- 2.5mΩ @ VGS = 4.5V
- 2.0mΩ @ VGS = 10V
- **ID**: 150A
- **Technology**: Trench (low on-resistance, high switching performance)
Domain and module applications:
SQM120N04-03-GE3-VB is suitable for a variety of high-efficiency power electronics applications due to its low RDS(ON), high current carrying capacity and high voltage handling capabilities. Here are some typical application fields:
- **Power management system**:
This MOSFET can be used in power modules such as switching power supplies (SMPS), DC-DC converters, AC-DC power supplies, etc., to provide efficient power conversion and voltage regulation functions. Its low RDS(ON) and high current capability enable it to reduce losses and improve overall energy efficiency in power supply design.
- **Motor drive**:
In motor control systems, SQM120N04-03-GE3-VB can be used as a switching element for high-power motor drive applications. Its excellent switching characteristics make it very suitable for scenarios that require high-frequency switching and high-current handling, such as power tools, electric vehicle drive modules, etc.
- **Automotive Electronics**:
The SQM120N04-03-GE3-VB is an ideal choice in automotive electronic systems, especially in battery management systems (BMS), charging control systems, and power control systems for electric and hybrid vehicles. Its high current handling capability and reliability are very suitable for high-load, long-duration operating environments.
- **Load Switching and Load Protection**:
It can achieve fast switching control of loads in various load switching applications, such as intelligent power modules, battery protection boards, and switching control circuits of electrical equipment.
- **Battery Management System (BMS)**:
In the battery management system, this MOSFET can be used for battery charging and discharging control, which can achieve efficient battery energy management, extend battery life, and improve battery efficiency.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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