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SQM120N03-1m5L-GE3-VB Product details
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SQM120N03-1m5L-GE3-VB MOSFET Product Introduction
The SQM120N03-1m5L-GE3-VB is a single N-Channel MOSFET in a TO263 package with excellent high current and low on-resistance characteristics for high power applications. With a maximum drain-source voltage (VDS) of 30V and a maximum gate-source voltage (VGS) of ±20V, this MOSFET is suitable for operation in a variety of power management and power conversion systems. Its maximum drain current (ID) is 150A, ensuring stable operation under high current conditions.
The SQM120N03-1m5L-GE3-VB uses Trench technology and has a very low on-resistance (RDS(ON)) - RDS(ON) is only 3.2mΩ at VGS = 4.5V and 2.3mΩ at VGS = 10V. The low on-resistance enables it to have superior performance in high-power, high-efficiency switching power supplies and load drives, reducing power losses and improving system efficiency. This MOSFET is suitable for a wide range of power applications, including DC-DC converters, motor drives, power switches, etc.
The SQM120N03-1m5L-GE3-VB is a single N-Channel MOSFET in a TO263 package with excellent high current and low on-resistance characteristics for high power applications. With a maximum drain-source voltage (VDS) of 30V and a maximum gate-source voltage (VGS) of ±20V, this MOSFET is suitable for operation in a variety of power management and power conversion systems. Its maximum drain current (ID) is 150A, ensuring stable operation under high current conditions.
The SQM120N03-1m5L-GE3-VB uses Trench technology and has a very low on-resistance (RDS(ON)) - RDS(ON) is only 3.2mΩ at VGS = 4.5V and 2.3mΩ at VGS = 10V. The low on-resistance enables it to have superior performance in high-power, high-efficiency switching power supplies and load drives, reducing power losses and improving system efficiency. This MOSFET is suitable for a wide range of power applications, including DC-DC converters, motor drives, power switches, etc.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 150A | 2.3mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
SQM120N03-1m5L-GE3-VB MOSFET Detailed parameter description
| **Parameter** | **Description** |
|-----------------------|---------------------------------------------------|
| **Package** | TO263 package|
| **Configuration** | Single N-Channel MOSFET |
| **Drain-source voltage (VDS)** | 30V |
| **Gate-source voltage (VGS)** | ±20V |
| **Threshold voltage (Vth)** | 1.7V |
| **On-resistance (RDS(ON))** | 3.2mΩ @ VGS=4.5V, 2.3mΩ @ VGS=10V |
| **Maximum drain current (ID)** | 150A |
| **Technology** | Trench technology|
| **Parameter** | **Description** |
|-----------------------|---------------------------------------------------|
| **Package** | TO263 package|
| **Configuration** | Single N-Channel MOSFET |
| **Drain-source voltage (VDS)** | 30V |
| **Gate-source voltage (VGS)** | ±20V |
| **Threshold voltage (Vth)** | 1.7V |
| **On-resistance (RDS(ON))** | 3.2mΩ @ VGS=4.5V, 2.3mΩ @ VGS=10V |
| **Maximum drain current (ID)** | 150A |
| **Technology** | Trench technology|
Domain and module applications：
Application fields and modules of SQM120N03-1m5L-GE3-VB MOSFET
1. **High-Efficiency Power Conversion**
SQM120N03-1m5L-GE3-VB MOSFET is an ideal choice for high-efficiency power conversion systems and is widely used in DC-DC converters, AC-DC power adapters, power management units, etc. Due to its low on-resistance, it can effectively reduce power loss during the conversion process, thereby improving the overall efficiency of the system. During the conversion process of high frequency and large current, this MOSFET can provide low switching losses to ensure efficient and stable operation of the power system.
2. **Motor Drive**
This MOSFET has excellent current carrying capacity and is suitable for motor drive applications, especially in DC motors and brushless motors (BLDC motors) drive circuits. Its low on-resistance can reduce power loss during motor starting, running and braking, while improving the efficiency of the drive system. It is widely used in industrial automation, robotics, home appliances and other fields.
3. **Power Switching**
The low RDS(ON) and high current capability of SQM120N03-1m5L-GE3-VB make it very suitable for power switching applications. It can switch loads efficiently and is suitable for switch control systems of high-power loads, such as battery management systems, UPS power supplies, photovoltaic inverters, etc., to ensure that the system can withstand high current loads while providing fast and reliable switching performance.
4. **Battery Management Systems**
In battery management systems, SQM120N03-1m5L-GE3-VB is used for battery charge and discharge control and power scheduling. Its high current carrying capacity and low on-resistance make it suitable for the management of high-power battery packs, optimizing the battery charging and discharging process, extending battery life and improving energy efficiency. Widely used in electric vehicles (EV), energy storage systems and portable devices.
5. **Consumer Electronics**
In consumer electronics, SQM120N03-1m5L-GE3-VB is often used for efficient power management, power conversion and load control. Its low power loss makes it very suitable for use in devices such as smartphones, tablets, and laptops to improve the battery efficiency of the device and reduce the heat generated by the device.
6. **Automotive Electronics**
In the field of automotive electronics, SQM120N03-1m5L-GE3-VB can be used for battery management, electric drive systems, and on-board power management modules of electric vehicles (EV). Its high current and high efficiency make it an ideal switching element in high-power power systems and on-board devices, meeting the stringent requirements of modern cars for power management and power conversion.
7. **Industrial Automation**
In industrial automation applications, SQM120N03-1m5L-GE3-VB can be used to drive motors, control loads, and manage power. Due to its ability to withstand high currents and low on-resistance, this MOSFET can provide stable and efficient power conversion in various industrial automation equipment, and is used in automated production lines, motor control, and high-efficiency power modules.
1. **High-Efficiency Power Conversion**
SQM120N03-1m5L-GE3-VB MOSFET is an ideal choice for high-efficiency power conversion systems and is widely used in DC-DC converters, AC-DC power adapters, power management units, etc. Due to its low on-resistance, it can effectively reduce power loss during the conversion process, thereby improving the overall efficiency of the system. During the conversion process of high frequency and large current, this MOSFET can provide low switching losses to ensure efficient and stable operation of the power system.
2. **Motor Drive**
This MOSFET has excellent current carrying capacity and is suitable for motor drive applications, especially in DC motors and brushless motors (BLDC motors) drive circuits. Its low on-resistance can reduce power loss during motor starting, running and braking, while improving the efficiency of the drive system. It is widely used in industrial automation, robotics, home appliances and other fields.
3. **Power Switching**
The low RDS(ON) and high current capability of SQM120N03-1m5L-GE3-VB make it very suitable for power switching applications. It can switch loads efficiently and is suitable for switch control systems of high-power loads, such as battery management systems, UPS power supplies, photovoltaic inverters, etc., to ensure that the system can withstand high current loads while providing fast and reliable switching performance.
4. **Battery Management Systems**
In battery management systems, SQM120N03-1m5L-GE3-VB is used for battery charge and discharge control and power scheduling. Its high current carrying capacity and low on-resistance make it suitable for the management of high-power battery packs, optimizing the battery charging and discharging process, extending battery life and improving energy efficiency. Widely used in electric vehicles (EV), energy storage systems and portable devices.
5. **Consumer Electronics**
In consumer electronics, SQM120N03-1m5L-GE3-VB is often used for efficient power management, power conversion and load control. Its low power loss makes it very suitable for use in devices such as smartphones, tablets, and laptops to improve the battery efficiency of the device and reduce the heat generated by the device.
6. **Automotive Electronics**
In the field of automotive electronics, SQM120N03-1m5L-GE3-VB can be used for battery management, electric drive systems, and on-board power management modules of electric vehicles (EV). Its high current and high efficiency make it an ideal switching element in high-power power systems and on-board devices, meeting the stringent requirements of modern cars for power management and power conversion.
7. **Industrial Automation**
In industrial automation applications, SQM120N03-1m5L-GE3-VB can be used to drive motors, control loads, and manage power. Due to its ability to withstand high currents and low on-resistance, this MOSFET can provide stable and efficient power conversion in various industrial automation equipment, and is used in automated production lines, motor control, and high-efficiency power modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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