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SQM120N02-1m3L-GE3-VB Product details
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SQM120N02-1m3L-GE3-VB MOSFET Product Introduction
**SQM120N02-1m3L-GE3-VB** is a **single N-channel MOSFET**, using **TO263 package**, with **ultra-low on-resistance** and **high current carrying capacity**. The **maximum drain voltage (VDS) of this MOSFET is 30V**, which is suitable for low-voltage power switching applications. Its **maximum drain current (ID) is 150A**, which enables it to handle high current loads, especially for power conversion and switching power supply fields that require high efficiency and low heat.
This MOSFET uses **Trench technology**, with an **on-resistance of 3.2mΩ** at **VGS=4.5V** and an **on-resistance of 2.3mΩ** at **VGS=10V**, which makes it have extremely low power loss and can keep low temperature under high current conditions. **The threshold voltage (Vth) is 1.7V**, which enables it to achieve good switching performance at a lower gate-source voltage and is widely used in power management, DC-DC converters and other systems.
**SQM120N02-1m3L-GE3-VB** is a **single N-channel MOSFET**, using **TO263 package**, with **ultra-low on-resistance** and **high current carrying capacity**. The **maximum drain voltage (VDS) of this MOSFET is 30V**, which is suitable for low-voltage power switching applications. Its **maximum drain current (ID) is 150A**, which enables it to handle high current loads, especially for power conversion and switching power supply fields that require high efficiency and low heat.
This MOSFET uses **Trench technology**, with an **on-resistance of 3.2mΩ** at **VGS=4.5V** and an **on-resistance of 2.3mΩ** at **VGS=10V**, which makes it have extremely low power loss and can keep low temperature under high current conditions. **The threshold voltage (Vth) is 1.7V**, which enables it to achieve good switching performance at a lower gate-source voltage and is widely used in power management, DC-DC converters and other systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 150A | 2.3mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed product parameter description
| **Parameter** | **Description** |
|-------------------------|-------------------------------------------------------|
| **Package type** | TO263 |
| **Configuration** | Single N-Channel MOSFET (Single-N-Channel) |
| **Maximum drain voltage (VDS)** | 30V |
| **Maximum gate-source voltage (VGS)** | ±20V |
| **Threshold voltage (Vth)** | 1.7V |
| **On-resistance (RDS(ON))** | 3.2mΩ @ VGS=4.5V；2.3mΩ @ VGS=10V |
| **Maximum drain current (ID)** | 150A |
| **Technology** | Trench |
| **Parameter** | **Description** |
|-------------------------|-------------------------------------------------------|
| **Package type** | TO263 |
| **Configuration** | Single N-Channel MOSFET (Single-N-Channel) |
| **Maximum drain voltage (VDS)** | 30V |
| **Maximum gate-source voltage (VGS)** | ±20V |
| **Threshold voltage (Vth)** | 1.7V |
| **On-resistance (RDS(ON))** | 3.2mΩ @ VGS=4.5V；2.3mΩ @ VGS=10V |
| **Maximum drain current (ID)** | 150A |
| **Technology** | Trench |
Domain and module applications：
Product Applications and Module Examples
1. **Power Management and DC-DC Converters**
SQM120N02-1m3L-GE3-VB is widely used in **power management** and **DC-DC converters**. Its **ultra-low on-resistance** and **high current capability** make it an excellent choice for **high-efficiency power supply designs**, and is suitable for **portable electronic devices, battery-powered systems**, and **current switches in high-power modules**. Its low power consumption characteristics minimize energy loss during the conversion process, ensuring efficient operation of the device.
2. **Power Tools and Battery Management Systems**
In **power tools** and **battery management systems (BMS)**, SQM120N02-1m3L-GE3-VB can provide efficient power switching operations, especially for **high-power power tools** and **electric vehicle battery systems**. Its high current carrying capacity and low on-resistance ensure the stability of the **battery charging and discharging process**, and effectively reduce heat accumulation, improving the overall efficiency and safety of the system.
3. **Automotive electronics and electric vehicles**
This MOSFET is suitable for **electric vehicles** and **electric vehicle charging systems**, and can provide efficient current switching functions in **battery management systems (BMS)**. Its **high current capability** and **low on-resistance** characteristics enable it to perform well in **current conversion** and **load management** in **electric drive systems** and **battery chargers**, ensuring that the battery charging process of electric vehicles is more efficient and safe.
4. **Industrial automation and robotic systems**
In **industrial automation systems** and **robotic control**, the SQM120N02-1m3L-GE3-VB can be used as a core component of **motor drive systems** and **servo motor control**. It can achieve efficient current switching and reduce current loss through **low on-resistance**, and is suitable for control systems with **high current load**, such as **automatic production lines, robot drive control modules**.
5. **Power switch and load protection**
SQM120N02-1m3L-GE3-VB is also widely used in **power switch** and **load protection circuits**. Its high current carrying capacity and low power loss make it very suitable for **overcurrent protection circuits** and **short-circuit protection systems**. In these applications, MOSFET can effectively **disconnect current**, prevent equipment damage, and protect the stability of the circuit system.
1. **Power Management and DC-DC Converters**
SQM120N02-1m3L-GE3-VB is widely used in **power management** and **DC-DC converters**. Its **ultra-low on-resistance** and **high current capability** make it an excellent choice for **high-efficiency power supply designs**, and is suitable for **portable electronic devices, battery-powered systems**, and **current switches in high-power modules**. Its low power consumption characteristics minimize energy loss during the conversion process, ensuring efficient operation of the device.
2. **Power Tools and Battery Management Systems**
In **power tools** and **battery management systems (BMS)**, SQM120N02-1m3L-GE3-VB can provide efficient power switching operations, especially for **high-power power tools** and **electric vehicle battery systems**. Its high current carrying capacity and low on-resistance ensure the stability of the **battery charging and discharging process**, and effectively reduce heat accumulation, improving the overall efficiency and safety of the system.
3. **Automotive electronics and electric vehicles**
This MOSFET is suitable for **electric vehicles** and **electric vehicle charging systems**, and can provide efficient current switching functions in **battery management systems (BMS)**. Its **high current capability** and **low on-resistance** characteristics enable it to perform well in **current conversion** and **load management** in **electric drive systems** and **battery chargers**, ensuring that the battery charging process of electric vehicles is more efficient and safe.
4. **Industrial automation and robotic systems**
In **industrial automation systems** and **robotic control**, the SQM120N02-1m3L-GE3-VB can be used as a core component of **motor drive systems** and **servo motor control**. It can achieve efficient current switching and reduce current loss through **low on-resistance**, and is suitable for control systems with **high current load**, such as **automatic production lines, robot drive control modules**.
5. **Power switch and load protection**
SQM120N02-1m3L-GE3-VB is also widely used in **power switch** and **load protection circuits**. Its high current carrying capacity and low power loss make it very suitable for **overcurrent protection circuits** and **short-circuit protection systems**. In these applications, MOSFET can effectively **disconnect current**, prevent equipment damage, and protect the stability of the circuit system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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