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SQM110N06-06-GE3-VB Product details
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1. **SQM110N06-06-GE3 Product Introduction**
SQM110N06-06-GE3 is a high-performance N-channel MOSFET in TO263 package, designed for high voltage and high current applications. The maximum drain-source voltage (VDS) of this MOSFET is 60V, the maximum drain current (ID) is 210A, and it has ultra-low on-resistance (RDS(ON) is 12mΩ @ VGS = 4.5V and 3.2mΩ @ VGS = 10V), which makes it excel in high-efficiency power conversion and high-power load control. Its turn-on voltage threshold (Vth) is 3V, and the maximum gate-source voltage (VGS) is ±20V, which is suitable for applications requiring high current, high voltage and low power loss. The SQM110N06-06-GE3 uses Trench technology to provide fast switching performance and high efficiency, making it ideal for use in power management, inverters, electric drive systems and other fields to help improve system performance and reduce energy loss.
SQM110N06-06-GE3 is a high-performance N-channel MOSFET in TO263 package, designed for high voltage and high current applications. The maximum drain-source voltage (VDS) of this MOSFET is 60V, the maximum drain current (ID) is 210A, and it has ultra-low on-resistance (RDS(ON) is 12mΩ @ VGS = 4.5V and 3.2mΩ @ VGS = 10V), which makes it excel in high-efficiency power conversion and high-power load control. Its turn-on voltage threshold (Vth) is 3V, and the maximum gate-source voltage (VGS) is ±20V, which is suitable for applications requiring high current, high voltage and low power loss. The SQM110N06-06-GE3 uses Trench technology to provide fast switching performance and high efficiency, making it ideal for use in power management, inverters, electric drive systems and other fields to help improve system performance and reduce energy loss.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 210A | 3.2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 210A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 210A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
2. **SQM110N06-06-GE3 Detailed Parameters**
- **Package Type**: TO263
- **Configuration**: Single N-channel MOSFET
- **Maximum Drain-Source Voltage (VDS)**: 60V
- **Maximum Gate-Source Voltage (VGS)**: ±20V
- **Turning On Voltage Threshold (Vth)**: 3V
- **On-Resistance (RDS(ON))**:
- 12mΩ @ VGS = 4.5V
- 3.2mΩ @ VGS = 10V
- **Maximum Drain Current (ID)**: 210A
- **Technology**: Trench Technology
- **Maximum Power Dissipation (Pd)**: Approximately 2W (depending on heat dissipation conditions)
- **Operating Temperature Range**: -55°C to +150°C
- **Electrical characteristics**: low on-resistance, fast switching, low leakage current, low power consumption
- **Applicable voltage range**: suitable for high voltage power management, battery drive system and high power load switching
- **Package Type**: TO263
- **Configuration**: Single N-channel MOSFET
- **Maximum Drain-Source Voltage (VDS)**: 60V
- **Maximum Gate-Source Voltage (VGS)**: ±20V
- **Turning On Voltage Threshold (Vth)**: 3V
- **On-Resistance (RDS(ON))**:
- 12mΩ @ VGS = 4.5V
- 3.2mΩ @ VGS = 10V
- **Maximum Drain Current (ID)**: 210A
- **Technology**: Trench Technology
- **Maximum Power Dissipation (Pd)**: Approximately 2W (depending on heat dissipation conditions)
- **Operating Temperature Range**: -55°C to +150°C
- **Electrical characteristics**: low on-resistance, fast switching, low leakage current, low power consumption
- **Applicable voltage range**: suitable for high voltage power management, battery drive system and high power load switching
Domain and module applications：
3. **Application fields and module examples of SQM110N06-06-GE3**
- **Power Management**:
SQM110N06-06-GE3 is very suitable for high voltage power management systems, especially in applications such as DC-DC converters and power regulators. Its low on-resistance and high current carrying capacity can significantly improve system efficiency and reduce energy loss, and is suitable for scenarios that require efficient power conversion, such as industrial equipment, power systems, communication base stations, etc.
- **Inverters**:
In solar inverters, wind power inverters, and other energy conversion systems, SQM110N06-06-GE3 can be used as an efficient switching element. Its low on-resistance and high current capability can improve power conversion efficiency and ensure system stability under high loads. The role of MOSFET in these inverters is to efficiently convert DC power to AC power and optimize the overall performance of the system.
- **Electric Drive Systems**:
SQM110N06-06-GE3 is very suitable for electric drive systems, such as power tools, electric vehicles (EV), robots, etc. MOSFET is used as a switching element in motor control to efficiently regulate the start and stop, speed and load regulation of the motor. Due to its low on-resistance and high current carrying capacity, it can ensure the efficiency and reliability of electric drive systems, especially in situations where high power output is required.
- **Battery Management Systems**:
In battery management systems (BMS), SQM110N06-06-GE3 can be used for battery charging, discharging and protection circuits, especially in electric vehicles (EV) and large energy storage systems. MOSFET can effectively control the current and voltage of the battery, realize battery protection, prevent overcurrent, overvoltage and other problems, and ensure that the battery works safely and stably under high load.
- **High Power Switching Applications**:
SQM110N06-06-GE3 excels in the field of high power switching and is suitable for power amplifiers, power regulators, and high current switching control modules. The low on-resistance and high current carrying capacity of MOSFET make it particularly suitable for applications such as industrial power supplies, variable frequency drive systems, and fast power converters, ensuring the stability and efficiency of the system in high power environments.
- **LED Drivers**:
SQM110N06-06-GE3 can also be used in LED driver circuits and excels in fields such as smart lamps, commercial lighting, and indoor/outdoor lighting. Due to its low on-resistance, MOSFET can efficiently regulate current, ensure stable operation of LED light sources, and improve their service life and energy efficiency.
- **Power Management**:
SQM110N06-06-GE3 is very suitable for high voltage power management systems, especially in applications such as DC-DC converters and power regulators. Its low on-resistance and high current carrying capacity can significantly improve system efficiency and reduce energy loss, and is suitable for scenarios that require efficient power conversion, such as industrial equipment, power systems, communication base stations, etc.
- **Inverters**:
In solar inverters, wind power inverters, and other energy conversion systems, SQM110N06-06-GE3 can be used as an efficient switching element. Its low on-resistance and high current capability can improve power conversion efficiency and ensure system stability under high loads. The role of MOSFET in these inverters is to efficiently convert DC power to AC power and optimize the overall performance of the system.
- **Electric Drive Systems**:
SQM110N06-06-GE3 is very suitable for electric drive systems, such as power tools, electric vehicles (EV), robots, etc. MOSFET is used as a switching element in motor control to efficiently regulate the start and stop, speed and load regulation of the motor. Due to its low on-resistance and high current carrying capacity, it can ensure the efficiency and reliability of electric drive systems, especially in situations where high power output is required.
- **Battery Management Systems**:
In battery management systems (BMS), SQM110N06-06-GE3 can be used for battery charging, discharging and protection circuits, especially in electric vehicles (EV) and large energy storage systems. MOSFET can effectively control the current and voltage of the battery, realize battery protection, prevent overcurrent, overvoltage and other problems, and ensure that the battery works safely and stably under high load.
- **High Power Switching Applications**:
SQM110N06-06-GE3 excels in the field of high power switching and is suitable for power amplifiers, power regulators, and high current switching control modules. The low on-resistance and high current carrying capacity of MOSFET make it particularly suitable for applications such as industrial power supplies, variable frequency drive systems, and fast power converters, ensuring the stability and efficiency of the system in high power environments.
- **LED Drivers**:
SQM110N06-06-GE3 can also be used in LED driver circuits and excels in fields such as smart lamps, commercial lighting, and indoor/outdoor lighting. Due to its low on-resistance, MOSFET can efficiently regulate current, ensure stable operation of LED light sources, and improve their service life and energy efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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