SQM110N06-04L-GE3-VB Product details
Product introduction:
**SQM110N06-04L-GE3-VB** is a **single N-channel MOSFET** in **TO263 package**, designed for efficient power switching and power management applications. Its maximum drain-source voltage (VDS) is **60V** and maximum drain current (ID) is **210A**, providing excellent current handling capability for systems requiring high power handling.
This MOSFET adopts **Trench technology** and has an extremely low on-resistance (RDS(ON)) of **3.2mΩ** at **VGS=10V** and **12mΩ** at **VGS=4.5V**, ensuring low power loss and high efficiency. With its excellent switching performance and high current carrying capability, the SQM110N06-04L-GE3-VB is ideal for high frequency, low voltage applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 210A | 3.2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 210A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 210A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
- **Model**: SQM110N06-04L-GE3-VB
- **Package type**: TO263
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- **12mΩ** @ VGS = 4.5V
- **3.2mΩ** @ VGS = 10V
- **Maximum drain current (ID)**: 210A
- **Technology**: Trench technology
Domain and module applications:
**SQM110N06-04L-GE3-VB** is widely used in systems that require high-power, high-efficiency switches due to its high current carrying capacity and extremely low on-resistance. The following are the main application fields and modules of this MOSFET:
#### a) **Power conversion module**
In **power conversion modules** (such as DC-DC converters, AC-DC power modules, etc.), **SQM110N06-04L-GE3-VB** is used as a **power switch** component to help achieve efficient power conversion. Its low on-resistance and high current handling capability make it play an important role in high-frequency, high-efficiency power conversion processes, reducing heat generation and improving the overall efficiency of the system.
#### b) **Power Tools and Motor Drive Systems**
In **Power Tools** and **Motor Drive Systems**, **SQM110N06-04L-GE3-VB** can be used for **Motor Drive** and **Motor Control**. Its high current capacity (210A) is suitable for driving high-power motors or high-torque power tools, ensuring smooth motor start and maintaining efficient operation. Low RDS(ON) ensures high efficiency and low power loss in the motor control system.
#### c) **Inverter and Solar Applications**
**SQM110N06-04L-GE3-VB** can be used in **Solar Inverter** systems to convert DC power generated by solar panels into AC power. This MOSFET can effectively handle high currents and has low switching losses, making it very suitable for use in high-efficiency inverters to ensure high conversion efficiency of solar systems and reduce energy losses in the system.
#### d) **Battery Management System (BMS)**
In the **Battery Management System (BMS)**, **SQM110N06-04L-GE3-VB** can be used as a key component for battery charge and discharge management to control the current flow of the battery. Its high current carrying capacity makes it suitable for management systems of large-capacity batteries, helping to optimize the efficiency of battery use and protect the battery from the risk of overcharge or over-discharge.
#### e) **Electric Vehicles and Hybrid Vehicles**
In the **Battery Management System** and **Motor Drive System** of **Electric Vehicles (EV)** and **Hybrid Vehicles (HEV)**, **SQM110N06-04L-GE3-VB** can be used for current control of high-power battery packs and driving of motors. Due to its high current capacity and low on-resistance, it can improve battery charging and discharging efficiency, and support efficient motor control, improving overall energy efficiency.
#### f) **Uninterruptible Power Supply (UPS) System**
In **UPS (Uninterruptible Power Supply)** system, **SQM110N06-04L-GE3-VB** can be used as a power switching element to ensure stable backup power supply during power outages. Due to its high current handling capability, it can support high power loads and maintain system stability. Especially under high load conditions, it can respond quickly and convert power to ensure continuous operation of equipment.
#### g) **LED Drive and Lighting System**
In **LED Drive System** , **SQM110N06-04L-GE3-VB** can be used as a switching element to control the current supply of LEDs. Due to its low on-resistance, it can provide efficient current regulation under low power consumption conditions, ensuring high efficiency and long life of LED lamps. This is especially important in large-scale LED lighting and intelligent lighting systems.
#### h) **High-efficiency power adapters**
This MOSFET is also widely used in **high-efficiency power adapters**. Its low RDS(ON) characteristics make it very useful in high-efficiency power adapters, which can minimize losses and improve conversion efficiency. It is suitable for power adapters for smart devices, communication equipment and consumer electronics.
### Summary
**SQM110N06-04L-GE3-VB** is an excellent **N-channel MOSFET** with **high current carrying capacity (210A)** and **low on-resistance (3.2mΩ)**. It is widely used in **power management, DC-DC conversion, motor drive, solar inverter, battery management system, electric vehicles, UPS system** and other high-power, low-power power electronic systems. The **Trench technology** it adopts can effectively reduce switching losses, improve system efficiency and performance, and is suitable for various high-efficiency and high-current application scenarios.
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