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SQM100N04-2M7-VB Product details
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Product Introduction
**SQM100N04-2M7-VB** is a high-performance single N-channel MOSFET in TO263 package, designed for applications requiring low on-resistance and high current handling capability. Its maximum drain voltage is 40V, maximum drain current is 150A, and it has extremely low on-resistance, reaching 2mΩ at VGS=10V and 2.5mΩ at VGS=4.5V. This MOSFET uses Trench technology to provide excellent performance in high-efficiency power conversion and current control applications. Due to its low on-resistance, it can significantly reduce power loss and improve system efficiency. It is widely used in high-frequency, high-power power management systems, DC-DC converters, battery management and electric vehicles.
**SQM100N04-2M7-VB** is a high-performance single N-channel MOSFET in TO263 package, designed for applications requiring low on-resistance and high current handling capability. Its maximum drain voltage is 40V, maximum drain current is 150A, and it has extremely low on-resistance, reaching 2mΩ at VGS=10V and 2.5mΩ at VGS=4.5V. This MOSFET uses Trench technology to provide excellent performance in high-efficiency power conversion and current control applications. Due to its low on-resistance, it can significantly reduce power loss and improve system efficiency. It is widely used in high-frequency, high-power power management systems, DC-DC converters, battery management and electric vehicles.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Model**: SQM100N04-2M7-VB
- **Package type**: TO263
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 2mΩ (at VGS = 10V)
- 2.5mΩ (at VGS = 4.5V)
- **Maximum drain current (ID)**: 150A
- **Technology**: Trench technology
- **Maximum power dissipation**: Maximum power dissipation capability is 150W (based on thermal design)
- **Model**: SQM100N04-2M7-VB
- **Package type**: TO263
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 2mΩ (at VGS = 10V)
- 2.5mΩ (at VGS = 4.5V)
- **Maximum drain current (ID)**: 150A
- **Technology**: Trench technology
- **Maximum power dissipation**: Maximum power dissipation capability is 150W (based on thermal design)
Domain and module applications：
Applications and module examples
1. **High-efficiency DC-DC converters**:
**SQM100N04-2M7-VB** has an extremely low on-resistance (2mΩ) in DC-DC converters, making it ideal for efficient voltage conversion applications. This MOSFET uses Trench technology to reduce power loss during the conversion process and provide higher conversion efficiency, especially suitable for high-frequency and high-power power conversion systems such as battery chargers, power management modules, solar inverters, etc.
2. **Electric vehicle power system**:
Electric vehicles require efficient power management systems to control the battery charging and discharging process. **SQM100N04-2M7-VB** As a MOSFET switching element, it can provide precise current control in the battery management system of electric vehicles, optimize battery life, and reduce power loss. The high current carrying capacity (150A) of this MOSFET is particularly suitable for the power system, battery management system and motor drive system of electric vehicles.
3. **Battery Management System (BMS)**:
In the battery management system, **SQM100N04-2M7-VB** is used for battery charge and discharge control. Due to its extremely low on-resistance, MOSFET maintains low heat output under high current applications, which can effectively improve the energy efficiency and reliability of the system. This MOSFET can be widely used in battery management systems such as portable electronic devices, power tools, energy storage systems, etc., to ensure that the battery can operate under safe and stable conditions.
4. **High-power power adapters and power modules**:
In high-power power adapters and power modules, **SQM100N04-2M7-VB** provides low-loss and high-efficiency power management. Its low on-resistance of 2mΩ and high current carrying capacity make it very suitable for high-power power applications such as server power, UPS power, industrial power, etc. The high-efficiency performance of MOSFET can significantly reduce energy loss and improve the overall efficiency of the system.
5. **High-frequency applications and power amplifiers**:
Due to its extremely low on-resistance and high current carrying capacity, the **SQM100N04-2M7-VB** is suitable for applications requiring high-frequency switching and efficient power control. For example, it can be used as a high-frequency switch to provide efficient power conversion and low-loss operation in wireless communications, RF power amplifiers, and radio frequency applications, ensuring the transmission quality of high-frequency signals and system stability.
6. **Power conversion and inverter systems**:
In power conversion systems, the **SQM100N04-2M7-VB** is widely used in power inverters, especially in solar inverters and wind inverters. Its ultra-low on-resistance and high current handling capability enable it to efficiently convert electrical energy while reducing heat and power losses, thereby improving the efficiency of energy conversion and the reliability of the system.
1. **High-efficiency DC-DC converters**:
**SQM100N04-2M7-VB** has an extremely low on-resistance (2mΩ) in DC-DC converters, making it ideal for efficient voltage conversion applications. This MOSFET uses Trench technology to reduce power loss during the conversion process and provide higher conversion efficiency, especially suitable for high-frequency and high-power power conversion systems such as battery chargers, power management modules, solar inverters, etc.
2. **Electric vehicle power system**:
Electric vehicles require efficient power management systems to control the battery charging and discharging process. **SQM100N04-2M7-VB** As a MOSFET switching element, it can provide precise current control in the battery management system of electric vehicles, optimize battery life, and reduce power loss. The high current carrying capacity (150A) of this MOSFET is particularly suitable for the power system, battery management system and motor drive system of electric vehicles.
3. **Battery Management System (BMS)**:
In the battery management system, **SQM100N04-2M7-VB** is used for battery charge and discharge control. Due to its extremely low on-resistance, MOSFET maintains low heat output under high current applications, which can effectively improve the energy efficiency and reliability of the system. This MOSFET can be widely used in battery management systems such as portable electronic devices, power tools, energy storage systems, etc., to ensure that the battery can operate under safe and stable conditions.
4. **High-power power adapters and power modules**:
In high-power power adapters and power modules, **SQM100N04-2M7-VB** provides low-loss and high-efficiency power management. Its low on-resistance of 2mΩ and high current carrying capacity make it very suitable for high-power power applications such as server power, UPS power, industrial power, etc. The high-efficiency performance of MOSFET can significantly reduce energy loss and improve the overall efficiency of the system.
5. **High-frequency applications and power amplifiers**:
Due to its extremely low on-resistance and high current carrying capacity, the **SQM100N04-2M7-VB** is suitable for applications requiring high-frequency switching and efficient power control. For example, it can be used as a high-frequency switch to provide efficient power conversion and low-loss operation in wireless communications, RF power amplifiers, and radio frequency applications, ensuring the transmission quality of high-frequency signals and system stability.
6. **Power conversion and inverter systems**:
In power conversion systems, the **SQM100N04-2M7-VB** is widely used in power inverters, especially in solar inverters and wind inverters. Its ultra-low on-resistance and high current handling capability enable it to efficiently convert electrical energy while reducing heat and power losses, thereby improving the efficiency of energy conversion and the reliability of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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