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SQD50P08-25L-GE3-VB Product details
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1. **SQD50P08-25L-GE3 Product Introduction**
SQD50P08-25L-GE3 is a high-performance single P-channel MOSFET in TO252 package, suitable for high voltage and high current switching applications. The maximum drain-source voltage (VDS) of this MOSFET is -100V, the maximum drain current (ID) is -50A, and it has ultra-low on-resistance (RDS(ON) is 21mΩ @ VGS = 4.5V and 17mΩ @ VGS = 10V), which enables it to perform well in high-efficiency power conversion and high-power load control. Its turn-on voltage threshold (Vth) is -2V, and the maximum gate-source voltage (VGS) is ±20V, which is suitable for applications requiring high current, high voltage and low power loss. The SQD50P08-25L-GE3 uses Trench technology to provide fast switching performance and high efficiency, making it ideal for power management, load switching, inverters, battery management and other fields.
SQD50P08-25L-GE3 is a high-performance single P-channel MOSFET in TO252 package, suitable for high voltage and high current switching applications. The maximum drain-source voltage (VDS) of this MOSFET is -100V, the maximum drain current (ID) is -50A, and it has ultra-low on-resistance (RDS(ON) is 21mΩ @ VGS = 4.5V and 17mΩ @ VGS = 10V), which enables it to perform well in high-efficiency power conversion and high-power load control. Its turn-on voltage threshold (Vth) is -2V, and the maximum gate-source voltage (VGS) is ±20V, which is suitable for applications requiring high current, high voltage and low power loss. The SQD50P08-25L-GE3 uses Trench technology to provide fast switching performance and high efficiency, making it ideal for power management, load switching, inverters, battery management and other fields.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -100V | -2V | -50A | 17mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -100V | -2V | -50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -100V | -2V | -50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
2. **SQD50P08-25L-GE3 Detailed Parameters**
- **Package Type**: TO252
- **Configuration**: Single P-channel MOSFET
- **Maximum Drain-Source Voltage (VDS)**: -100V
- **Maximum Gate-Source Voltage (VGS)**: ±20V
- **Turning Threshold Voltage (Vth)**: -2V
- **On-Resistance (RDS(ON))**:
- 21mΩ @ VGS = 4.5V
- 17mΩ @ VGS = 10V
- **Maximum Drain Current (ID)**: -50A
- **Technology**: Trench Technology
- **Maximum Power Dissipation (Pd)**: Approximately 2W (depending on heat dissipation conditions)
- **Operating Temperature Range**: -55°C to +150°C
- **Electrical characteristics**: low on-resistance, fast switching, low leakage current, low power consumption
- **Applicable voltage range**: suitable for high voltage power management, battery drive system and high power load switching
- **Package Type**: TO252
- **Configuration**: Single P-channel MOSFET
- **Maximum Drain-Source Voltage (VDS)**: -100V
- **Maximum Gate-Source Voltage (VGS)**: ±20V
- **Turning Threshold Voltage (Vth)**: -2V
- **On-Resistance (RDS(ON))**:
- 21mΩ @ VGS = 4.5V
- 17mΩ @ VGS = 10V
- **Maximum Drain Current (ID)**: -50A
- **Technology**: Trench Technology
- **Maximum Power Dissipation (Pd)**: Approximately 2W (depending on heat dissipation conditions)
- **Operating Temperature Range**: -55°C to +150°C
- **Electrical characteristics**: low on-resistance, fast switching, low leakage current, low power consumption
- **Applicable voltage range**: suitable for high voltage power management, battery drive system and high power load switching
Domain and module applications：
3. **Application fields and module examples of SQD50P08-25L-GE3**
- **Power Management**:
SQD50P08-25L-GE3 is very suitable for high voltage power management systems, especially in applications such as DC-DC converters and power regulators. Its low on-resistance and high current carrying capacity enable it to improve the efficiency of the system and reduce energy loss, making it suitable for scenarios that require efficient power conversion, such as communication base stations, power equipment, and industrial automation systems.
- **Load Switching**:
In load switching applications, SQD50P08-25L-GE3 can be used as a load switch control element to handle the switching operation of high voltage loads. Due to its low on-resistance and high current carrying capacity, it is very suitable for the control of high power loads and is widely used in electrical equipment, home appliances, and automation control systems.
- **Battery Management Systems**:
In battery management systems (BMS), SQD50P08-25L-GE3 can be used for battery charging, discharging and protection circuits. Especially in electric vehicles (EV) and large-scale energy storage systems, the high current capability and low power consumption characteristics of MOSFET help optimize the battery charging and discharging efficiency and provide protection functions such as overvoltage and overcurrent.
- **Inverters**:
SQD50P08-25L-GE3 can be used in solar inverters, wind power inverters and other energy conversion systems. Its low on-resistance and high current carrying capacity enable it to play a key role in the power switching and current regulation of the inverter, providing high efficiency and reliability. This MOSFET can be used for DC-AC conversion to help achieve efficient energy conversion and better system stability.
- **Electric Drive Systems**:
This MOSFET can be used in electric drive systems such as power tools, electric vehicles (EVs) and robots. The SQD50P08-25L-GE3 can be used as an efficient switching element in motor control to regulate the start and stop and speed control of the motor. Due to its low on-resistance and high current carrying capacity, it can ensure the efficiency and stability of the system.
- **LED Drivers**:
In LED driver circuits, the SQD50P08-25L-GE3 can be used as a current regulation switch. Due to its low on-resistance and high current capability, it can provide efficient and stable current regulation, thereby ensuring the brightness and service life of the LED light source. Suitable for various types of lighting equipment, including smart lamps, commercial lighting, and indoor/outdoor lighting.
- **High Power Switching Applications**:
The SQD50P08-25L-GE3 performs particularly well in the field of high power switching and is suitable for power amplifiers, power regulators, and high current switch control modules. Its high withstand voltage, low on-resistance, and high current carrying capacity give it significant advantages in these applications, especially in industrial power supplies, high-speed power converters, and variable frequency drive systems.
- **Power Management**:
SQD50P08-25L-GE3 is very suitable for high voltage power management systems, especially in applications such as DC-DC converters and power regulators. Its low on-resistance and high current carrying capacity enable it to improve the efficiency of the system and reduce energy loss, making it suitable for scenarios that require efficient power conversion, such as communication base stations, power equipment, and industrial automation systems.
- **Load Switching**:
In load switching applications, SQD50P08-25L-GE3 can be used as a load switch control element to handle the switching operation of high voltage loads. Due to its low on-resistance and high current carrying capacity, it is very suitable for the control of high power loads and is widely used in electrical equipment, home appliances, and automation control systems.
- **Battery Management Systems**:
In battery management systems (BMS), SQD50P08-25L-GE3 can be used for battery charging, discharging and protection circuits. Especially in electric vehicles (EV) and large-scale energy storage systems, the high current capability and low power consumption characteristics of MOSFET help optimize the battery charging and discharging efficiency and provide protection functions such as overvoltage and overcurrent.
- **Inverters**:
SQD50P08-25L-GE3 can be used in solar inverters, wind power inverters and other energy conversion systems. Its low on-resistance and high current carrying capacity enable it to play a key role in the power switching and current regulation of the inverter, providing high efficiency and reliability. This MOSFET can be used for DC-AC conversion to help achieve efficient energy conversion and better system stability.
- **Electric Drive Systems**:
This MOSFET can be used in electric drive systems such as power tools, electric vehicles (EVs) and robots. The SQD50P08-25L-GE3 can be used as an efficient switching element in motor control to regulate the start and stop and speed control of the motor. Due to its low on-resistance and high current carrying capacity, it can ensure the efficiency and stability of the system.
- **LED Drivers**:
In LED driver circuits, the SQD50P08-25L-GE3 can be used as a current regulation switch. Due to its low on-resistance and high current capability, it can provide efficient and stable current regulation, thereby ensuring the brightness and service life of the LED light source. Suitable for various types of lighting equipment, including smart lamps, commercial lighting, and indoor/outdoor lighting.
- **High Power Switching Applications**:
The SQD50P08-25L-GE3 performs particularly well in the field of high power switching and is suitable for power amplifiers, power regulators, and high current switch control modules. Its high withstand voltage, low on-resistance, and high current carrying capacity give it significant advantages in these applications, especially in industrial power supplies, high-speed power converters, and variable frequency drive systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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