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SQD50N06-092-VB Product details

Product introduction:

SQD50N06-092-VB Product Introduction:

SQD50N06-092-VB is a single N-Channel MOSFET in TO252 package, designed for high-efficiency power switching and power management applications. This MOSFET provides a maximum drain-source voltage (VDS) of up to 60V and a maximum gate-source voltage (VGS) of ±20V, making it suitable for a wide range of power systems and power conversion modules. Its on-resistance (RDS(ON)) is very low, 10mΩ at VGS=10V, and the maximum drain current (ID) can reach 58A. Thanks to the application of Trench technology, this MOSFET achieves low conduction loss and low switching loss, suitable for high current applications, especially in power management, DC-DC converters and battery management systems.

SQD50N06-092-VB has excellent thermal stability and high switching efficiency, and can operate reliably under high load conditions. Its extremely low RDS(ON) reduces power loss in high current environments, greatly improving system efficiency and enabling energy efficiency improvements in battery-powered systems, power tools, power adapters, and other devices. With its excellent switching characteristics and high current capability, the SQD50N06-092-VB is an ideal power switch choice for modern electronic devices.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 60V 2.5V 58A 10mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-N 60V 2.5V 58A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-N 60V 2.5V 58A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-N
SQD50N06-092-VB Detailed parameter description:

- **Package type**: TO252
- **Configuration**: Single N-Channel MOSFET
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 13mΩ @ VGS=4.5V
- 10mΩ @ VGS=10V
- **Maximum drain current (ID)**: 58A
- **Technology**: Trench
- **Operating temperature range**: -55°C to 150°C
- **Package size**: TO252
- **Quiescent Current**: Extremely low quiescent current ensures high performance and long-term operation without generating excessive heat.

Domain and module applications:

SQD50N06-092-VB Applications and Modules:

1. **Power Management System**
SQD50N06-092-VB has an extremely low on-resistance, which can significantly reduce power losses in power management systems, making it ideal for DC-DC converters, AC-DC adapters, power distribution modules, and voltage regulation systems. Its high current capability makes it an ideal choice for high-efficiency power conversion applications, especially in power modules that require high efficiency and low energy consumption.

2. **Battery Management System (BMS)**
The high current capability and low on-resistance of this MOSFET make it very suitable for battery management systems (BMS). It can help control the battery charging and discharging process and ensure that the battery operates at a safe operating current, especially in battery management systems for power tools, electric vehicles, and other battery-driven devices, providing efficient current regulation and energy management.

3. **Power Tools and High-Power Electronics**
In power tools and other high-power electronic devices, the SQD50N06-092-VB can be used as a key power switch to help the equipment operate stably under high current loads. Its low RDS(ON) and high current carrying capacity enable it to reduce heat loss in power-intensive applications and extend the life of the equipment.

4. **Automotive Electronics**
The SQD50N06-092-VB is suitable for battery management, power control and power distribution systems in electric vehicles (EVs) and hybrid electric vehicles (HEVs) due to its high current capability and low on-resistance. The MOSFET is able to provide high efficiency under high load and high-frequency switching conditions, helping to optimize the efficiency and energy recovery of automotive batteries.

5. **Communication Equipment and Industrial Power**
Due to its high current and low on-resistance, the SQD50N06-092-VB is ideal for power switches in communication equipment, base stations and other industrial applications. It can be used in a variety of high-efficiency power conversion applications to ensure stable power supply and lower heat loss, thereby improving the efficiency of the overall system.

6. **High-efficiency power conversion and power switching**
SQD50N06-092-VB has low on-resistance and high current carrying capacity, suitable for high-efficiency power converters and power switch modules. It performs particularly well in applications such as high-efficiency power adapters, LED driver power supplies, wireless chargers, etc., providing lower energy loss and optimizing system efficiency.

7. **Consumer electronics and home appliance applications**
In home appliances and consumer electronics, SQD50N06-092-VB is widely used in power modules, smart home devices, home appliances and other fields. Its low power consumption and high efficiency make it an ideal choice for smart devices and high-efficiency home appliances, ensuring that the equipment runs for a long time and remains efficient.

* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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