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SQD50N05-11L-GE3-VB Product details
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SQD50N05-11L-GE3-VB MOSFET Product Introduction
SQD50N05-11L-GE3-VB is a high-performance single N-Channel MOSFET in TO252 package, suitable for a variety of power switching applications. The maximum drain-source voltage (VDS) of this MOSFET is 60V, the gate-source voltage (VGS) can reach ±20V, and it has a low on-resistance (RDS(ON)). At VGS = 10V, the on-resistance is 10mΩ, showing excellent switching efficiency and low power loss. The maximum drain current (ID) of this MOSFET can reach 58A, which is particularly suitable for high current applications and provides stable and reliable current control.
SQD50N05-11L-GE3-VB uses Trench technology, and its low RDS(ON) characteristics enable it to exhibit extremely low switching losses and heat generation in frequently switching power management systems. Therefore, it is widely used in power conversion, motor drive, load switching and other electronic systems that require efficient switching operations.
SQD50N05-11L-GE3-VB is a high-performance single N-Channel MOSFET in TO252 package, suitable for a variety of power switching applications. The maximum drain-source voltage (VDS) of this MOSFET is 60V, the gate-source voltage (VGS) can reach ±20V, and it has a low on-resistance (RDS(ON)). At VGS = 10V, the on-resistance is 10mΩ, showing excellent switching efficiency and low power loss. The maximum drain current (ID) of this MOSFET can reach 58A, which is particularly suitable for high current applications and provides stable and reliable current control.
SQD50N05-11L-GE3-VB uses Trench technology, and its low RDS(ON) characteristics enable it to exhibit extremely low switching losses and heat generation in frequently switching power management systems. Therefore, it is widely used in power conversion, motor drive, load switching and other electronic systems that require efficient switching operations.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | 10mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
SQD50N05-11L-GE3-VB MOSFET Detailed Parameter Description
| **Parameter** | **Description** |
|-----------------------|-------------------------------------------------|
| **Package** | TO252 package|
| **Configuration** | Single N-Channel MOSFET |
| **Drain-Source Voltage(VDS)** | 60V |
| **Gate-Source Voltage(VGS)** | ±20V |
| **Threshold Voltage(Vth)** | 2.5V |
| **On-Resistance(RDS(ON))** | 13mΩ @ VGS=4.5V, 10mΩ @ VGS=10V |
| **Maximum Drain Current(ID)** | 58A |
| **Technology** | Trench Technology|
| **Parameter** | **Description** |
|-----------------------|-------------------------------------------------|
| **Package** | TO252 package|
| **Configuration** | Single N-Channel MOSFET |
| **Drain-Source Voltage(VDS)** | 60V |
| **Gate-Source Voltage(VGS)** | ±20V |
| **Threshold Voltage(Vth)** | 2.5V |
| **On-Resistance(RDS(ON))** | 13mΩ @ VGS=4.5V, 10mΩ @ VGS=10V |
| **Maximum Drain Current(ID)** | 58A |
| **Technology** | Trench Technology|
Domain and module applications：
Applications and modules of SQD50N05-11L-GE3-VB MOSFET
1. **Power Conversion**
SQD50N05-11L-GE3-VB is very suitable for power conversion applications such as DC-DC converters and voltage regulator modules. Its low on-resistance enables the MOSFET to maintain low power loss and high efficiency in high-frequency switching, thereby improving the overall efficiency of the power converter. It is widely used in various portable devices, power electronics and consumer electronics.
2. **Motor Drive**
SQD50N05-11L-GE3-VB has excellent performance in motor drive systems, can provide efficient and stable current control, and is particularly suitable for driving DC motors. Its high current capability makes it an ideal choice for home appliances, industrial automation, robots and power tools, helping to optimize the control efficiency of motors.
3. **Load Switching**
As a key component of the load switch, SQD50N05-11L-GE3-VB can accurately control the connection between the power supply and the load. Its excellent switching performance and low on-resistance reduce switching losses during load switching and are widely used in various power management systems, including power modules and smart home devices.
4. **Battery Management Systems**
In the battery management system (BMS), the high current carrying capacity and low loss characteristics of SQD50N05-11L-GE3-VB make it an ideal choice. It can efficiently control the battery charging and discharging process, improve the efficiency of battery management, and extend the battery life. It is particularly suitable for battery management in electric vehicles (EVs), energy storage systems, and portable devices.
5. **Automotive Electronics**
SQD50N05-11L-GE3-VB can be widely used in automotive electronic systems, such as electric drive, on-board power management, LED lighting control and other modules. Its high current capability and efficient switching performance make it play an important role in the power system of the car, optimize energy management, and improve the energy efficiency of the vehicle.
6. **Industrial Automation**
In the field of industrial automation, SQD50N05-11L-GE3-VB is often used in power control modules, motor control systems and load control systems. Its high switching efficiency and high current handling capability enable it to cope with the demand for high power and high efficiency in industrial equipment, ensuring reliable operation.
7. **Consumer Electronics**
This MOSFET is used in consumer electronic devices such as laptops, tablets and smartphones for battery charging circuits, power management and load control. SQD50N05-11L-GE3-VB can improve the energy efficiency of the device, extend the battery life, and its low heat generation can ensure that the device remains stable during long-term use.
8. **Communication Equipment**
In communication equipment, SQD50N05-11L-GE3-VB is used in power amplifiers and RF power modules. Its low RDS(ON) and high current capability can ensure the stability and high efficiency of the device, and will not cause performance degradation due to overheating in long-term high-power applications.
1. **Power Conversion**
SQD50N05-11L-GE3-VB is very suitable for power conversion applications such as DC-DC converters and voltage regulator modules. Its low on-resistance enables the MOSFET to maintain low power loss and high efficiency in high-frequency switching, thereby improving the overall efficiency of the power converter. It is widely used in various portable devices, power electronics and consumer electronics.
2. **Motor Drive**
SQD50N05-11L-GE3-VB has excellent performance in motor drive systems, can provide efficient and stable current control, and is particularly suitable for driving DC motors. Its high current capability makes it an ideal choice for home appliances, industrial automation, robots and power tools, helping to optimize the control efficiency of motors.
3. **Load Switching**
As a key component of the load switch, SQD50N05-11L-GE3-VB can accurately control the connection between the power supply and the load. Its excellent switching performance and low on-resistance reduce switching losses during load switching and are widely used in various power management systems, including power modules and smart home devices.
4. **Battery Management Systems**
In the battery management system (BMS), the high current carrying capacity and low loss characteristics of SQD50N05-11L-GE3-VB make it an ideal choice. It can efficiently control the battery charging and discharging process, improve the efficiency of battery management, and extend the battery life. It is particularly suitable for battery management in electric vehicles (EVs), energy storage systems, and portable devices.
5. **Automotive Electronics**
SQD50N05-11L-GE3-VB can be widely used in automotive electronic systems, such as electric drive, on-board power management, LED lighting control and other modules. Its high current capability and efficient switching performance make it play an important role in the power system of the car, optimize energy management, and improve the energy efficiency of the vehicle.
6. **Industrial Automation**
In the field of industrial automation, SQD50N05-11L-GE3-VB is often used in power control modules, motor control systems and load control systems. Its high switching efficiency and high current handling capability enable it to cope with the demand for high power and high efficiency in industrial equipment, ensuring reliable operation.
7. **Consumer Electronics**
This MOSFET is used in consumer electronic devices such as laptops, tablets and smartphones for battery charging circuits, power management and load control. SQD50N05-11L-GE3-VB can improve the energy efficiency of the device, extend the battery life, and its low heat generation can ensure that the device remains stable during long-term use.
8. **Communication Equipment**
In communication equipment, SQD50N05-11L-GE3-VB is used in power amplifiers and RF power modules. Its low RDS(ON) and high current capability can ensure the stability and high efficiency of the device, and will not cause performance degradation due to overheating in long-term high-power applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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