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SQD50N04-5m0-GE3-VB Product details
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1. **SQD50N04-5m0-GE3 Product Introduction**
SQD50N04-5m0-GE3 is a high-efficiency single N-channel MOSFET in TO252 package, suitable for medium and low voltage, high current switching applications. Its maximum drain-source voltage (VDS) is 40V, the maximum drain current (ID) is 85A, and it has ultra-low on-resistance (RDS(ON) is 6mΩ @ VGS = 4.5V and 5mΩ @ VGS = 10V), which makes it have excellent performance in high-efficiency power management and high-power load switching systems. This MOSFET adopts Trench technology, has low conduction loss and fast switching characteristics, and is suitable for use in high-efficiency power conversion and load control systems. Its turn-on voltage threshold (Vth) is 2.5V and the maximum gate-source voltage (VGS) is 20V, making it suitable for a variety of high-efficiency and low-power application scenarios.
SQD50N04-5m0-GE3 is a high-efficiency single N-channel MOSFET in TO252 package, suitable for medium and low voltage, high current switching applications. Its maximum drain-source voltage (VDS) is 40V, the maximum drain current (ID) is 85A, and it has ultra-low on-resistance (RDS(ON) is 6mΩ @ VGS = 4.5V and 5mΩ @ VGS = 10V), which makes it have excellent performance in high-efficiency power management and high-power load switching systems. This MOSFET adopts Trench technology, has low conduction loss and fast switching characteristics, and is suitable for use in high-efficiency power conversion and load control systems. Its turn-on voltage threshold (Vth) is 2.5V and the maximum gate-source voltage (VGS) is 20V, making it suitable for a variety of high-efficiency and low-power application scenarios.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 85A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 85A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 85A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. **SQD50N04-5m0-GE3 Detailed Parameters**
- **Package Type**: TO252
- **Configuration**: Single N-channel MOSFET
- **Maximum Drain-Source Voltage (VDS)**: 40V
- **Maximum Gate-Source Voltage (VGS)**: ±20V
- **Turning Threshold Voltage (Vth)**: 2.5V
- **On-Resistance (RDS(ON))**:
- 6mΩ @ VGS = 4.5V
- 5mΩ @ VGS = 10V
- **Maximum Drain Current (ID)**: 85A
- **Technology**: Trench Technology
- **Maximum Power Dissipation (Pd)**: Approximately 2W (depending on heat dissipation conditions)
- **Operating Temperature Range**: -55°C to +150°C
- **Electrical characteristics**: low on-resistance, fast switching, low leakage current, low power consumption
- **Applicable voltage range**: suitable for medium and low voltage power management, battery drive and high-efficiency load switch applications
- **Package Type**: TO252
- **Configuration**: Single N-channel MOSFET
- **Maximum Drain-Source Voltage (VDS)**: 40V
- **Maximum Gate-Source Voltage (VGS)**: ±20V
- **Turning Threshold Voltage (Vth)**: 2.5V
- **On-Resistance (RDS(ON))**:
- 6mΩ @ VGS = 4.5V
- 5mΩ @ VGS = 10V
- **Maximum Drain Current (ID)**: 85A
- **Technology**: Trench Technology
- **Maximum Power Dissipation (Pd)**: Approximately 2W (depending on heat dissipation conditions)
- **Operating Temperature Range**: -55°C to +150°C
- **Electrical characteristics**: low on-resistance, fast switching, low leakage current, low power consumption
- **Applicable voltage range**: suitable for medium and low voltage power management, battery drive and high-efficiency load switch applications
Domain and module applications：
3. **Application fields and module examples of SQD50N04-5m0-GE3**
- **Power Management**:
SQD50N04-5m0-GE3 is very suitable for power management applications such as DC-DC converters, power regulators, buck and boost converters. Its low on-resistance (RDS(ON)) and high current carrying capacity can significantly improve power efficiency and reduce system heat loss. This makes it perform well in high-efficiency power supply and distributed power systems, and is particularly suitable for applications that require high conversion efficiency and long-term stable operation.
- **Load Switching**:
In load switching applications, SQD50N04-5m0-GE3 can be used as a power switch or load control element. Due to its ultra-low on-resistance and high current carrying capacity, this MOSFET can be used for efficient switching of high-power loads and is widely used in industrial electrical equipment, home appliance power supplies, and high-load switch control systems.
- **Battery Management Systems**:
The SQD50N04-5m0-GE3 is suitable for battery management systems (BMS), especially in electric vehicles (EV), energy storage systems and other portable battery applications. It can efficiently manage the charge and discharge process of the battery pack to ensure the safety, reliability and high performance of the battery in operation. Low on-resistance helps to reduce power loss in the battery management system and ensure long-term operating efficiency.
- **Electric Drive Systems**:
The SQD50N04-5m0-GE3 can be widely used in electric drive systems such as power tools, electric vehicles (EV) and robots. Its high current carrying capacity and low on-resistance enable it to provide fast response and high efficiency in controlling the start and stop, speed regulation and other aspects of the motor. In electric drive systems, low RDS(ON) values help reduce heat generation and improve system efficiency.
- **LED Drivers**:
As a switching element in the LED driver circuit, the SQD50N04-5m0-GE3 can provide high efficiency when regulating the LED current and stabilizing the brightness of the LED light source. The low on-resistance and high current carrying capacity enable it to reduce power loss during the power conversion process, ensuring long-term stable operation and high efficiency of the LED system.
- **Inverters**:
The SQD50N04-5m0-GE3 can be used as a power switch in solar inverters, wind power inverters and other energy conversion systems. Its high-efficiency switching and low on-resistance characteristics can significantly improve energy conversion efficiency and is suitable for high-efficiency DC-AC conversion applications.
- **Smart Battery Chargers**:
In smart battery chargers, the SQD50N04-5m0-GE3 can be used as a high-efficiency power switch to regulate the battery charging process and provide necessary overvoltage and overcurrent protection. Its high current carrying capacity and low on-resistance enable it to support fast charging and reduce the heat generated during the charging process.
- **Power Management**:
SQD50N04-5m0-GE3 is very suitable for power management applications such as DC-DC converters, power regulators, buck and boost converters. Its low on-resistance (RDS(ON)) and high current carrying capacity can significantly improve power efficiency and reduce system heat loss. This makes it perform well in high-efficiency power supply and distributed power systems, and is particularly suitable for applications that require high conversion efficiency and long-term stable operation.
- **Load Switching**:
In load switching applications, SQD50N04-5m0-GE3 can be used as a power switch or load control element. Due to its ultra-low on-resistance and high current carrying capacity, this MOSFET can be used for efficient switching of high-power loads and is widely used in industrial electrical equipment, home appliance power supplies, and high-load switch control systems.
- **Battery Management Systems**:
The SQD50N04-5m0-GE3 is suitable for battery management systems (BMS), especially in electric vehicles (EV), energy storage systems and other portable battery applications. It can efficiently manage the charge and discharge process of the battery pack to ensure the safety, reliability and high performance of the battery in operation. Low on-resistance helps to reduce power loss in the battery management system and ensure long-term operating efficiency.
- **Electric Drive Systems**:
The SQD50N04-5m0-GE3 can be widely used in electric drive systems such as power tools, electric vehicles (EV) and robots. Its high current carrying capacity and low on-resistance enable it to provide fast response and high efficiency in controlling the start and stop, speed regulation and other aspects of the motor. In electric drive systems, low RDS(ON) values help reduce heat generation and improve system efficiency.
- **LED Drivers**:
As a switching element in the LED driver circuit, the SQD50N04-5m0-GE3 can provide high efficiency when regulating the LED current and stabilizing the brightness of the LED light source. The low on-resistance and high current carrying capacity enable it to reduce power loss during the power conversion process, ensuring long-term stable operation and high efficiency of the LED system.
- **Inverters**:
The SQD50N04-5m0-GE3 can be used as a power switch in solar inverters, wind power inverters and other energy conversion systems. Its high-efficiency switching and low on-resistance characteristics can significantly improve energy conversion efficiency and is suitable for high-efficiency DC-AC conversion applications.
- **Smart Battery Chargers**:
In smart battery chargers, the SQD50N04-5m0-GE3 can be used as a high-efficiency power switch to regulate the battery charging process and provide necessary overvoltage and overcurrent protection. Its high current carrying capacity and low on-resistance enable it to support fast charging and reduce the heat generated during the charging process.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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