SQD50N04-4m5L-GE3-VB Product details
Product introduction:
**SQD50N04-4m5L-GE3-VB** is a high-efficiency **single N-channel MOSFET**, using **TO252 package**, with **high current carrying capacity** and **low on-resistance**. The **maximum drain-source voltage (VDS)** of this device is **40V**, suitable for low-voltage power management, motor drive and power conversion applications. Its **on-resistance (RDS(ON))** is **6mΩ** at **VGS=4.5V** and **5mΩ** at **VGS=10V**, showing extremely low conduction loss, which can effectively reduce power loss and improve system efficiency. The **maximum drain current (ID)** of this MOSFET is **85A**, suitable for high-power applications, providing stable current transmission and efficient power control.
**SQD50N04-4m5L-GE3-VB** adopts **Trench technology**, which can reduce switching losses and increase switching speed, thus ensuring optimal performance in high-frequency switching applications. With its **high efficiency and low heat generation characteristics**, this MOSFET is widely used in battery management, power conversion, industrial automation and automotive electronics.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 85A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 85A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 85A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
- **Model**: SQD50N04-4m5L-GE3-VB
- **Package type**: TO252
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- **6mΩ** @ VGS = 4.5V
- **5mΩ** @ VGS = 10V
- **Maximum drain current (ID)**: 85A
- **Technology**: Trench
Domain and module applications:
**SQD50N04-4m5L-GE3-VB**'s **low RDS(ON)** and **high current carrying capacity** make it very suitable for high-efficiency, high-power switching and power management applications. The following are typical application fields and modules of this MOSFET:
#### a) **Power converter and DC-DC converter**
In **DC-DC converter**, **SQD50N04-4m5L-GE3-VB** can be used as a switching element to provide efficient current conversion, reduce conduction loss, and improve system conversion efficiency. Due to its **low RDS(ON)** characteristics, it can reduce power loss and improve the overall performance of the system, especially suitable for **efficient power management** and **high-frequency switching operation**.
#### b) **Battery Management System (BMS)**
In **Battery Management System (BMS)**, **SQD50N04-4m5L-GE3-VB** can be used as a switching element for **battery charge and discharge control**, providing precise current regulation. The MOSFET can operate stably under high current loads, ensuring the efficiency and safety of the battery charging process, while effectively extending the battery life.
#### c) **Power Tools and Electric Vehicles**
In **power tools** and **electric vehicles** (EV), **SQD50N04-4m5L-GE3-VB** has high current carrying capacity and low on-resistance, and can be used as the core switching element of **motor drivers**. It can effectively control current and power transmission, support **efficient electric drive systems**, improve equipment performance and reduce power losses.
#### d) **LED driver power supply**
**SQD50N04-4m5L-GE3-VB** can also be applied to **LED driver power supply**, especially in scenarios requiring high power conversion. Due to its excellent conduction performance and high current capability, it can provide stable power supply for LEDs, reduce energy waste and improve system efficiency, and is especially suitable for **high-power LED lighting systems**.
#### e) **Industrial power supply and automation control**
In **industrial power supply systems** and **automation control**, **SQD50N04-4m5L-GE3-VB** can be used for **motor control, power distribution** and other applications. Its **high current capability and low on-resistance** characteristics enable it to operate stably under large loads, ensuring high efficiency of the power system.
#### f) **Automotive electronics**
In **automotive electronics applications**, especially in **battery management**, **on-board power conversion** and **motor drive** systems, **SQD50N04-4m5L-GE3-VB** provides ideal switching performance for **high current demand** and **low power loss** automotive power control modules. It helps improve the power efficiency of the on-board system, reduce heat generation and optimize power distribution.
#### g) **Consumer electronics**
In **consumer electronic devices** (such as **battery chargers, power adapters**, etc.), the low RDS(ON) characteristics of this MOSFET can effectively reduce power loss and ensure high efficiency of electronic products during use, especially in high-frequency switching situations.
### Summary
**SQD50N04-4m5L-GE3-VB** is a **40V, 85A single N-channel MOSFET** in **TO252 package**, designed for high-efficiency power conversion, high-power switching and high-current management applications. Its **low on-resistance** and **high current carrying capacity** make it widely used in **DC-DC converters, LED drivers, industrial power supplies, automotive electronics and other fields**. By providing **fast switching response and high efficiency**, it can improve system efficiency, reduce heat loss, and ensure stable current transmission, making it an ideal choice for efficient power management systems.
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