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SQD50N04-3M5L-VB Product details
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Product Introduction
The SQD50N04-3M5L-VB is a high-performance N-type MOSFET in a TO252 package designed to handle high current loads. It has a drain-source voltage (VDS) of 40V and a maximum drain current (ID) of 85A. Based on Trench technology, the SQD50N04-3M5L-VB provides extremely low on-resistance (RDS(ON) = 6mΩ @ VGS = 4.5V and 5mΩ @ VGS = 10V), enabling efficient current switching control. Its low power loss makes it particularly suitable for applications such as high-efficiency power systems, power management, and battery charging. This MOSFET is suitable for a wide range of applications, especially in battery power supply, industrial control, consumer electronics, and power tools, providing stable and efficient power management and control.
The SQD50N04-3M5L-VB is a high-performance N-type MOSFET in a TO252 package designed to handle high current loads. It has a drain-source voltage (VDS) of 40V and a maximum drain current (ID) of 85A. Based on Trench technology, the SQD50N04-3M5L-VB provides extremely low on-resistance (RDS(ON) = 6mΩ @ VGS = 4.5V and 5mΩ @ VGS = 10V), enabling efficient current switching control. Its low power loss makes it particularly suitable for applications such as high-efficiency power systems, power management, and battery charging. This MOSFET is suitable for a wide range of applications, especially in battery power supply, industrial control, consumer electronics, and power tools, providing stable and efficient power management and control.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 85A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 85A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 85A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package**: TO252
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS = 4.5V
- 5mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 85A
- **Technology**: Trench
- **Maximum power loss**: Approximately 3.2W (assuming maximum current and on-resistance)
- **Maximum junction temperature**: 150°C
- **Operating temperature range**: -55°C to 150°C
- **Quiet leakage current (IDSS)**: ≤ 10μA @ VDS = 40V
- **Input capacitance (Ciss)**: Approx. 1250pF @ VGS=0V
- **Output capacitance (Coss)**: Approx. 80pF @ VDS = 40V
- **Junction-to-case thermal resistance**: Approx. 80°C/W
- **Package**: TO252
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS = 4.5V
- 5mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 85A
- **Technology**: Trench
- **Maximum power loss**: Approximately 3.2W (assuming maximum current and on-resistance)
- **Maximum junction temperature**: 150°C
- **Operating temperature range**: -55°C to 150°C
- **Quiet leakage current (IDSS)**: ≤ 10μA @ VDS = 40V
- **Input capacitance (Ciss)**: Approx. 1250pF @ VGS=0V
- **Output capacitance (Coss)**: Approx. 80pF @ VDS = 40V
- **Junction-to-case thermal resistance**: Approx. 80°C/W
Domain and module applications：
Applicable fields and modules
1. **High-efficiency power system**:
SQD50N04-3M5L-VB is an ideal choice for high-efficiency power management systems such as power converters and DC-DC converters. Its low on-resistance and high current carrying capacity enable it to significantly reduce power losses in high-efficiency power systems, provide excellent current switching efficiency, and is suitable for a wide range of power module designs.
2. **Battery Management System (BMS)**:
In a battery management system (BMS), SQD50N04-3M5L-VB can be used as a switching element to control the battery charging and discharging process. The maximum current of 85A and low on-resistance enable it to carry large currents, making it particularly suitable for high-power battery management applications such as power tools, energy storage systems, and electric vehicles.
3. **Electric Vehicles (EV) and Hybrid Electric Vehicles (HEV)**:
In battery management, inverters, and power modules of electric vehicles (EV) and hybrid electric vehicles (HEV), SQD50N04-3M5L-VB can effectively control the flow of current to ensure efficient and stable operation of the system. Low on-resistance and high current capability enable it to provide excellent switching performance and is suitable for various key modules in automotive power systems.
4. **Industrial Automation and Power Control**:
In the field of industrial automation equipment and power control, SQD50N04-3M5L-VB can be used as power switches, inverter controllers and other modules. Its maximum leakage current of up to 85A enables it to carry high current loads in industrial power systems while maintaining high efficiency, and is widely used in UPS systems, power conversion equipment, etc.
5. **Consumer Electronic Devices**:
For portable electronic devices such as smartphone chargers, power tools, wireless devices, etc., SQD50N04-3M5L-VB provides efficient current control and conversion, optimizes system power consumption, and extends battery life. It can still provide high power support in a limited design to meet the needs of high-efficiency power management.
6. **LED Driver Power Module**:
In LED lighting systems, SQD50N04-3M5L-VB is used as a switching element to optimize the efficiency of LED driver power. Its low RDS(ON) enables it to reduce power loss in high-current driven LED systems, improve the overall efficiency and stability of the system, and is particularly suitable for high-power commercial lighting or industrial lighting modules.
7. **Radio Equipment and Communication Systems**:
This MOSFET is also widely used in radio equipment and communication systems as a switching device for power management, used in power modules such as power amplifiers and signal modems. SQD50N04-3M5L-VB can help achieve high-efficiency signal amplification and power control, and provide reliable power supply stability.
1. **High-efficiency power system**:
SQD50N04-3M5L-VB is an ideal choice for high-efficiency power management systems such as power converters and DC-DC converters. Its low on-resistance and high current carrying capacity enable it to significantly reduce power losses in high-efficiency power systems, provide excellent current switching efficiency, and is suitable for a wide range of power module designs.
2. **Battery Management System (BMS)**:
In a battery management system (BMS), SQD50N04-3M5L-VB can be used as a switching element to control the battery charging and discharging process. The maximum current of 85A and low on-resistance enable it to carry large currents, making it particularly suitable for high-power battery management applications such as power tools, energy storage systems, and electric vehicles.
3. **Electric Vehicles (EV) and Hybrid Electric Vehicles (HEV)**:
In battery management, inverters, and power modules of electric vehicles (EV) and hybrid electric vehicles (HEV), SQD50N04-3M5L-VB can effectively control the flow of current to ensure efficient and stable operation of the system. Low on-resistance and high current capability enable it to provide excellent switching performance and is suitable for various key modules in automotive power systems.
4. **Industrial Automation and Power Control**:
In the field of industrial automation equipment and power control, SQD50N04-3M5L-VB can be used as power switches, inverter controllers and other modules. Its maximum leakage current of up to 85A enables it to carry high current loads in industrial power systems while maintaining high efficiency, and is widely used in UPS systems, power conversion equipment, etc.
5. **Consumer Electronic Devices**:
For portable electronic devices such as smartphone chargers, power tools, wireless devices, etc., SQD50N04-3M5L-VB provides efficient current control and conversion, optimizes system power consumption, and extends battery life. It can still provide high power support in a limited design to meet the needs of high-efficiency power management.
6. **LED Driver Power Module**:
In LED lighting systems, SQD50N04-3M5L-VB is used as a switching element to optimize the efficiency of LED driver power. Its low RDS(ON) enables it to reduce power loss in high-current driven LED systems, improve the overall efficiency and stability of the system, and is particularly suitable for high-power commercial lighting or industrial lighting modules.
7. **Radio Equipment and Communication Systems**:
This MOSFET is also widely used in radio equipment and communication systems as a switching device for power management, used in power modules such as power amplifiers and signal modems. SQD50N04-3M5L-VB can help achieve high-efficiency signal amplification and power control, and provide reliable power supply stability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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