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SQD50N04-09H-GE3-VB Product details
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SQD50N04-09H-GE3-VB MOSFET Product Introduction
**SQD50N04-09H-GE3-VB** is a single N-Channel MOSFET in a **TO252** package, designed for high-efficiency, high-current applications. The maximum drain-source voltage (V_DS) of this MOSFET is **40V**, the gate-source voltage can reach **±20V**, and the gate threshold voltage is **2.5V**. Its on-resistance (R_DS(on)) is only **5mΩ** at **V_GS = 10V**, and the drain current **I_D** can reach **85A**. Using **Trench** technology, SQD50N04-09H-GE3-VB provides extremely low conduction loss and excellent switching performance, and is suitable for various power management and drive systems that require high current and low conduction loss.
**SQD50N04-09H-GE3-VB** is a single N-Channel MOSFET in a **TO252** package, designed for high-efficiency, high-current applications. The maximum drain-source voltage (V_DS) of this MOSFET is **40V**, the gate-source voltage can reach **±20V**, and the gate threshold voltage is **2.5V**. Its on-resistance (R_DS(on)) is only **5mΩ** at **V_GS = 10V**, and the drain current **I_D** can reach **85A**. Using **Trench** technology, SQD50N04-09H-GE3-VB provides extremely low conduction loss and excellent switching performance, and is suitable for various power management and drive systems that require high current and low conduction loss.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 85A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 85A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 85A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
SQD50N04-09H-GE3-VB MOSFET Parameter Description
| **Parameter** | **Description** |
|-------------------------|------------------------------------|
| **Package** | TO252 |
| **Configuration** | Single N-Channel |
| **Drain-Source Voltage (V_DS)** | 40V |
| **Gate-Source Voltage (V_GS)** | ±20V |
| **Gate Threshold Voltage (V_th)** | 2.5V |
| **On-Resistance (R_DS(on))** | 6mΩ @ V_GS = 4.5V |
| | 5mΩ @ V_GS = 10V |
| **Drain Current (I_D)** | 85A |
| **Technology** | Trench |
| **Operating Temperature Range** | -55°C to 150°C |
| **Parameter** | **Description** |
|-------------------------|------------------------------------|
| **Package** | TO252 |
| **Configuration** | Single N-Channel |
| **Drain-Source Voltage (V_DS)** | 40V |
| **Gate-Source Voltage (V_GS)** | ±20V |
| **Gate Threshold Voltage (V_th)** | 2.5V |
| **On-Resistance (R_DS(on))** | 6mΩ @ V_GS = 4.5V |
| | 5mΩ @ V_GS = 10V |
| **Drain Current (I_D)** | 85A |
| **Technology** | Trench |
| **Operating Temperature Range** | -55°C to 150°C |
Domain and module applications：
SQD50N04-09H-GE3-VB MOSFET Applications and Modules
1. **Power Management and DC-DC Converters**
- **SQD50N04-09H-GE3-VB** is a highly efficient MOSFET commonly used in **DC-DC converters** and power management systems. Due to its low on-resistance (only **5mΩ**), it can significantly reduce power loss and provide stable power output, especially in high-efficiency power supply designs such as **automotive electronic power supply**, **server power supply**, **telecommunication equipment power supply** and other fields, improving power conversion efficiency and reducing heat generation.
2. **Electric Drive Systems**
- In **electric drive systems** (such as power tools, electric vehicles, motor control), SQD50N04-09H-GE3-VB can be used for power switching and motor control. Its high current carrying capacity (85A) enables it to switch current efficiently, ensuring low energy loss, fast response and high reliability during the start, stop and operation of the motor.
3. **Automotive electronics**
- This MOSFET is widely used in **automotive electronics**, especially in battery management systems (BMS) and power distribution modules in electric vehicles (EV) and hybrid electric vehicles (HEV). Due to its low on-resistance and high current carrying capacity, the SQD50N04-09H-GE3-VB is suitable for high-efficiency battery charge and discharge management and power conversion systems, ensuring the reliability and stability of electric vehicles under different load conditions.
4. **Wireless communication and base station equipment**
- In **wireless communication** base stations and related equipment, the SQD50N04-09H-GE3-VB is used for power modules and radio frequency (RF) power management. Its low switching loss and high current handling capability make it an ideal choice for wireless communication equipment, especially in power converters to improve the overall efficiency of the system.
5. **Industrial Automation and Motor Control**
- In **Industrial Automation** and **Motor Control Systems**, SQD50N04-09H-GE3-VB can be used for brushless DC motor (BLDC) control systems, stepper motor drives, and various high-efficiency servo drive systems. The high current carrying and low on-resistance characteristics of MOSFET ensure efficient motor drive and precise control, reducing power loss in motor control systems.
6. **Solar Inverter and Energy Storage System**
- In **Solar Inverter** and **Energy Storage System**, SQD50N04-09H-GE3-VB is used to convert and control battery stored energy, or to achieve DC to AC (DC-AC) power conversion in solar systems. Its low on-resistance enables the device to provide higher conversion efficiency and reduce energy loss when handling large currents.
7. **Home Appliances and Consumer Electronics**
- **SQD50N04-09H-GE3-VB** can also be used in **home appliances** and **consumer electronics** products, such as electric curtains, air conditioners, electric kitchen appliances, etc. In these devices, this MOSFET can help improve the efficiency of the power supply, reduce the power loss of the equipment, and achieve more stable performance.
8. **Battery Chargers and UPS Systems**
- In **battery chargers** and **UPS (uninterruptible power supply) systems**, SQD50N04-09H-GE3-VB as a power switch can ensure the system's high efficiency during battery charging and discharging, especially under high load conditions, helping the system maintain low heat output and stable operation, extending battery life and optimizing overall charging efficiency.
1. **Power Management and DC-DC Converters**
- **SQD50N04-09H-GE3-VB** is a highly efficient MOSFET commonly used in **DC-DC converters** and power management systems. Due to its low on-resistance (only **5mΩ**), it can significantly reduce power loss and provide stable power output, especially in high-efficiency power supply designs such as **automotive electronic power supply**, **server power supply**, **telecommunication equipment power supply** and other fields, improving power conversion efficiency and reducing heat generation.
2. **Electric Drive Systems**
- In **electric drive systems** (such as power tools, electric vehicles, motor control), SQD50N04-09H-GE3-VB can be used for power switching and motor control. Its high current carrying capacity (85A) enables it to switch current efficiently, ensuring low energy loss, fast response and high reliability during the start, stop and operation of the motor.
3. **Automotive electronics**
- This MOSFET is widely used in **automotive electronics**, especially in battery management systems (BMS) and power distribution modules in electric vehicles (EV) and hybrid electric vehicles (HEV). Due to its low on-resistance and high current carrying capacity, the SQD50N04-09H-GE3-VB is suitable for high-efficiency battery charge and discharge management and power conversion systems, ensuring the reliability and stability of electric vehicles under different load conditions.
4. **Wireless communication and base station equipment**
- In **wireless communication** base stations and related equipment, the SQD50N04-09H-GE3-VB is used for power modules and radio frequency (RF) power management. Its low switching loss and high current handling capability make it an ideal choice for wireless communication equipment, especially in power converters to improve the overall efficiency of the system.
5. **Industrial Automation and Motor Control**
- In **Industrial Automation** and **Motor Control Systems**, SQD50N04-09H-GE3-VB can be used for brushless DC motor (BLDC) control systems, stepper motor drives, and various high-efficiency servo drive systems. The high current carrying and low on-resistance characteristics of MOSFET ensure efficient motor drive and precise control, reducing power loss in motor control systems.
6. **Solar Inverter and Energy Storage System**
- In **Solar Inverter** and **Energy Storage System**, SQD50N04-09H-GE3-VB is used to convert and control battery stored energy, or to achieve DC to AC (DC-AC) power conversion in solar systems. Its low on-resistance enables the device to provide higher conversion efficiency and reduce energy loss when handling large currents.
7. **Home Appliances and Consumer Electronics**
- **SQD50N04-09H-GE3-VB** can also be used in **home appliances** and **consumer electronics** products, such as electric curtains, air conditioners, electric kitchen appliances, etc. In these devices, this MOSFET can help improve the efficiency of the power supply, reduce the power loss of the equipment, and achieve more stable performance.
8. **Battery Chargers and UPS Systems**
- In **battery chargers** and **UPS (uninterruptible power supply) systems**, SQD50N04-09H-GE3-VB as a power switch can ensure the system's high efficiency during battery charging and discharging, especially under high load conditions, helping the system maintain low heat output and stable operation, extending battery life and optimizing overall charging efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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