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SQD50N02-04L-GE3-VB Product details
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SQD50N02-04L-GE3-VB Product Introduction:
SQD50N02-04L-GE3-VB is a single N-Channel MOSFET in TO252 package, designed for high-efficiency switching and power management applications. This MOSFET has a maximum drain-source voltage (VDS) of 20V and a maximum gate-source voltage (VGS) of ±20V, which is particularly suitable for low-voltage, high-current applications. Its on-resistance (RDS(ON)) is very low, 4.5mΩ at VGS=4.5V, which greatly reduces power loss and improves system efficiency. It supports a maximum drain current (ID) of 100A, making it perform well in high-current applications and is widely used in electronic devices and power modules.
SQD50N02-04L-GE3-VB uses Trench technology to provide lower on-resistance and higher switching performance, making it very suitable for efficient power management, battery management systems and power conversion modules. Its low conduction loss, high current carrying capacity and high thermal stability make it an ideal switching element in many power supply systems.
SQD50N02-04L-GE3-VB is a single N-Channel MOSFET in TO252 package, designed for high-efficiency switching and power management applications. This MOSFET has a maximum drain-source voltage (VDS) of 20V and a maximum gate-source voltage (VGS) of ±20V, which is particularly suitable for low-voltage, high-current applications. Its on-resistance (RDS(ON)) is very low, 4.5mΩ at VGS=4.5V, which greatly reduces power loss and improves system efficiency. It supports a maximum drain current (ID) of 100A, making it perform well in high-current applications and is widely used in electronic devices and power modules.
SQD50N02-04L-GE3-VB uses Trench technology to provide lower on-resistance and higher switching performance, making it very suitable for efficient power management, battery management systems and power conversion modules. Its low conduction loss, high current carrying capacity and high thermal stability make it an ideal switching element in many power supply systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 100A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
SQD50N02-04L-GE3-VB Detailed parameter description:
- **Package type**: TO252
- **Configuration**: Single N-Channel MOSFET
- **Maximum drain-source voltage (VDS)**: 20V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 0.5V to 1.5V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS=2.5V
- 4.5mΩ @ VGS=4.5V
- **Maximum drain current (ID)**: 100A
- **Technology**: Trench
- **Operating temperature range**: -55°C to 150°C
- **Package size**: TO252
- **Package type**: TO252
- **Configuration**: Single N-Channel MOSFET
- **Maximum drain-source voltage (VDS)**: 20V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 0.5V to 1.5V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS=2.5V
- 4.5mΩ @ VGS=4.5V
- **Maximum drain current (ID)**: 100A
- **Technology**: Trench
- **Operating temperature range**: -55°C to 150°C
- **Package size**: TO252
Domain and module applications：
SQD50N02-04L-GE3-VB Applications and Modules:
1. **Power Management System**
The low on-resistance and high current capability of the SQD50N02-04L-GE3-VB make it ideal for power management systems, especially for DC-DC converters, inverters and power distribution modules. Its high efficiency can significantly improve power conversion efficiency and reduce heat loss, and is widely used in consumer electronics, communication equipment and power modules.
2. **Battery Management System (BMS)**
Due to its low RDS(ON) and high current carrying capacity, this MOSFET is suitable for use in battery management systems to manage the charging and discharging process of the battery. It can control the switching of the battery to ensure that the battery is not damaged by overcharging or over-discharging, and is also widely used in battery management of power tools, electric vehicles and other portable devices.
3. **Power tools and high-performance electronic devices**
In power tools and high-performance electronic devices, SQD50N02-04L-GE3-VB can be used as a power switching element to ensure that the equipment can work stably under high current loads. Due to its excellent switching characteristics and high current capability, it is particularly suitable for use as a high-efficiency power switch in battery-powered systems.
4. **Intelligent power module**
SQD50N02-04L-GE3-VB can be used in a variety of intelligent power modules, including adjustable power supplies, inverters, and power adapters. The low on-resistance characteristic reduces energy loss during power conversion and is suitable for efficient power modules, especially in applications that require high current and fast response.
5. **High-efficiency power conversion and power switching**
Due to its extremely low on-resistance and high current carrying capacity, this MOSFET is particularly suitable for efficient power conversion and power switching applications, such as wireless chargers, LED driver power supplies, etc. It can provide higher efficiency and lower energy loss to ensure stable operation of the power system.
6. **Automotive electronics and battery charge and discharge management**
SQD50N02-04L-GE3-VB is widely used in battery charge and discharge management systems for electric vehicles and hybrid vehicles. It can help manage the charging and discharging process of high-power batteries, and while ensuring high efficiency, reduce the power loss of the system and extend the battery life.
7. **Communication equipment and other industrial applications**
In communication equipment and some industrial applications, this MOSFET can be used as a power switch or protection element to regulate the power supply and provide high current control. It can switch quickly and carry large currents, and is suitable for industrial scenarios such as base stations and power equipment.
1. **Power Management System**
The low on-resistance and high current capability of the SQD50N02-04L-GE3-VB make it ideal for power management systems, especially for DC-DC converters, inverters and power distribution modules. Its high efficiency can significantly improve power conversion efficiency and reduce heat loss, and is widely used in consumer electronics, communication equipment and power modules.
2. **Battery Management System (BMS)**
Due to its low RDS(ON) and high current carrying capacity, this MOSFET is suitable for use in battery management systems to manage the charging and discharging process of the battery. It can control the switching of the battery to ensure that the battery is not damaged by overcharging or over-discharging, and is also widely used in battery management of power tools, electric vehicles and other portable devices.
3. **Power tools and high-performance electronic devices**
In power tools and high-performance electronic devices, SQD50N02-04L-GE3-VB can be used as a power switching element to ensure that the equipment can work stably under high current loads. Due to its excellent switching characteristics and high current capability, it is particularly suitable for use as a high-efficiency power switch in battery-powered systems.
4. **Intelligent power module**
SQD50N02-04L-GE3-VB can be used in a variety of intelligent power modules, including adjustable power supplies, inverters, and power adapters. The low on-resistance characteristic reduces energy loss during power conversion and is suitable for efficient power modules, especially in applications that require high current and fast response.
5. **High-efficiency power conversion and power switching**
Due to its extremely low on-resistance and high current carrying capacity, this MOSFET is particularly suitable for efficient power conversion and power switching applications, such as wireless chargers, LED driver power supplies, etc. It can provide higher efficiency and lower energy loss to ensure stable operation of the power system.
6. **Automotive electronics and battery charge and discharge management**
SQD50N02-04L-GE3-VB is widely used in battery charge and discharge management systems for electric vehicles and hybrid vehicles. It can help manage the charging and discharging process of high-power batteries, and while ensuring high efficiency, reduce the power loss of the system and extend the battery life.
7. **Communication equipment and other industrial applications**
In communication equipment and some industrial applications, this MOSFET can be used as a power switch or protection element to regulate the power supply and provide high current control. It can switch quickly and carry large currents, and is suitable for industrial scenarios such as base stations and power equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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