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SQD50N02-04-GE3-VB Product details
Back to previous pageProduct introduction：
1. **Product Introduction**:
SQD50N02-04-GE3-VB is a high-performance single N-channel MOSFET in TO252 package, suitable for low voltage, high current applications. The MOSFET has a drain-source voltage (VDS) of 20V and an ultra-low on-resistance (RDS(ON)). At VGS=4.5V, RDS(ON) is only 4.5mΩ. With its excellent on-performance and up to 100A of leakage current (ID), the SQD50N02-04-GE3-VB is very efficient in applications where large currents need to flow. This MOSFET uses advanced Trench technology and is suitable for use in multiple fields such as efficient power management, battery management, load switching, etc.
SQD50N02-04-GE3-VB is a high-performance single N-channel MOSFET in TO252 package, suitable for low voltage, high current applications. The MOSFET has a drain-source voltage (VDS) of 20V and an ultra-low on-resistance (RDS(ON)). At VGS=4.5V, RDS(ON) is only 4.5mΩ. With its excellent on-performance and up to 100A of leakage current (ID), the SQD50N02-04-GE3-VB is very efficient in applications where large currents need to flow. This MOSFET uses advanced Trench technology and is suitable for use in multiple fields such as efficient power management, battery management, load switching, etc.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 100A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. **Detailed parameter description**:
- **Package type**: TO252
- **Configuration**: Single N-type channel
- **VDS**: 20V
- **VGS**: ±20V
- **Vth**: 0.5V ~ 1.5V
- **RDS(ON)**:
- 6mΩ@VGS=2.5V
- 4.5mΩ@VGS=4.5V
- **ID**: 100A
- **Technology**: Trench
- **Package type**: TO252
- **Configuration**: Single N-type channel
- **VDS**: 20V
- **VGS**: ±20V
- **Vth**: 0.5V ~ 1.5V
- **RDS(ON)**:
- 6mΩ@VGS=2.5V
- 4.5mΩ@VGS=4.5V
- **ID**: 100A
- **Technology**: Trench
Domain and module applications：
3. **Applications and modules**:
SQD50N02-04-GE3-VB is suitable for a variety of applications where high currents flow due to its low on-resistance and high current carrying capacity. The following are the main application scenarios of this MOSFET:
- **Power management**:
Due to its low RDS(ON) and high current carrying capacity, SQD50N02-04-GE3-VB is an ideal choice in **DC-DC converters**, **power distribution systems** and **power management units** (PMU). In these applications, it can effectively reduce power losses and improve system efficiency. Especially in power supply designs that require high efficiency and low power consumption, the high performance of SQD50N02-04-GE3-VB can significantly optimize the power conversion process.
- **Load switch**:
This MOSFET can be used as an efficient **load switch**, which is very effective in applications such as **battery management systems**, **portable electronic devices**, **wireless communication devices**, etc. It is able to provide reliable switching control, ensure efficient transmission of load current, and reduce the power consumption of the battery. For example, this MOSFET is required as a key load control element in battery-driven devices.
- **Battery Charging and Management**:
In **Battery Chargers** and **Battery Management Systems** (BMS), the SQD50N02-04-GE3-VB is used as a switching element to greatly improve charging efficiency. Its ultra-low on-resistance can reduce the heat and power loss generated during charging, and is suitable for fast charging technology and large-capacity battery management systems, ensuring efficient charging and long-term stable operation of the battery.
- **Power Tools and Motor Drives**:
Due to its high current carrying capacity and low on-resistance, the SQD50N02-04-GE3-VB is also very suitable for **Power Tools** and **Motor Drive** systems. In **Motor Control**, **Power Tool Power Systems** and **Electric Vehicles** (EV), it can be used as a power switch to ensure efficient operation and current transmission of the motor, reduce power loss and optimize energy efficiency.
- **LED drive and lighting system**:
In **LED drivers** and **intelligent lighting systems**, SQD50N02-04-GE3-VB can provide precise current control to ensure stable LED operating current, thereby extending the service life of LED lamps and improving system efficiency. Especially in lighting systems that require high power and high efficiency, this MOSFET can significantly reduce the loss during power conversion and ensure long-term reliable operation of the system.
- **Power distribution and transmission**:
In **power distribution systems** and **high-efficiency power transmission modules**, SQD50N02-04-GE3-VB can effectively transmit large currents and ensure a stable supply of electricity. It can be used in power systems such as **power inverters**, **solar panel connections**, **power protection circuits**, etc. to provide efficient current switching and load control.
SQD50N02-04-GE3-VB is suitable for a variety of applications where high currents flow due to its low on-resistance and high current carrying capacity. The following are the main application scenarios of this MOSFET:
- **Power management**:
Due to its low RDS(ON) and high current carrying capacity, SQD50N02-04-GE3-VB is an ideal choice in **DC-DC converters**, **power distribution systems** and **power management units** (PMU). In these applications, it can effectively reduce power losses and improve system efficiency. Especially in power supply designs that require high efficiency and low power consumption, the high performance of SQD50N02-04-GE3-VB can significantly optimize the power conversion process.
- **Load switch**:
This MOSFET can be used as an efficient **load switch**, which is very effective in applications such as **battery management systems**, **portable electronic devices**, **wireless communication devices**, etc. It is able to provide reliable switching control, ensure efficient transmission of load current, and reduce the power consumption of the battery. For example, this MOSFET is required as a key load control element in battery-driven devices.
- **Battery Charging and Management**:
In **Battery Chargers** and **Battery Management Systems** (BMS), the SQD50N02-04-GE3-VB is used as a switching element to greatly improve charging efficiency. Its ultra-low on-resistance can reduce the heat and power loss generated during charging, and is suitable for fast charging technology and large-capacity battery management systems, ensuring efficient charging and long-term stable operation of the battery.
- **Power Tools and Motor Drives**:
Due to its high current carrying capacity and low on-resistance, the SQD50N02-04-GE3-VB is also very suitable for **Power Tools** and **Motor Drive** systems. In **Motor Control**, **Power Tool Power Systems** and **Electric Vehicles** (EV), it can be used as a power switch to ensure efficient operation and current transmission of the motor, reduce power loss and optimize energy efficiency.
- **LED drive and lighting system**:
In **LED drivers** and **intelligent lighting systems**, SQD50N02-04-GE3-VB can provide precise current control to ensure stable LED operating current, thereby extending the service life of LED lamps and improving system efficiency. Especially in lighting systems that require high power and high efficiency, this MOSFET can significantly reduce the loss during power conversion and ensure long-term reliable operation of the system.
- **Power distribution and transmission**:
In **power distribution systems** and **high-efficiency power transmission modules**, SQD50N02-04-GE3-VB can effectively transmit large currents and ensure a stable supply of electricity. It can be used in power systems such as **power inverters**, **solar panel connections**, **power protection circuits**, etc. to provide efficient current switching and load control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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