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SQD40N04-10A-GE3-VB Product details

Product introduction:

1. **SQD40N04-10A-GE3-VB Product Introduction**

**SQD40N04-10A-GE3-VB** is a **single N-channel MOSFET**, in **TO252 package**, mainly used in power management and switching applications. The device has a maximum drain-source voltage (VDS) of **40V**, suitable for low to medium voltage power systems, and provides **high current carrying capacity (maximum 85A)**, suitable for high power applications. The **on-resistance (RDS(ON))** of this MOSFET is 5mΩ** at **VGS=10V** and 6mΩ** at **VGS=4.5V**, showing extremely low conduction losses, thereby improving switching efficiency and reducing heat generation.

Its **threshold voltage (Vth)** is **2.5V**, which means that when the gate voltage reaches or exceeds **2.5V**, the MOSFET starts to turn on. Using **Trench technology**, the device has faster switching response and lower conduction loss, making it an ideal choice for high-efficiency power management and high-frequency switching control applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 40V 2.5V 85A 5mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-N 40V 2.5V 85A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-N 40V 2.5V 85A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-N
2. **Detailed parameter description**

- **Model**: SQD40N04-10A-GE3-VB
- **Package type**: TO252
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- **6mΩ** @ VGS = 4.5V
- **5mΩ** @ VGS = 10V
- **Maximum drain current (ID)**: 85A
- **Technology**: Trench

Domain and module applications:

3. **Application fields and module examples**

**SQD40N04-10A-GE3-VB**'s low on-resistance and high current carrying capacity make it suitable for many high-efficiency, high-power power conversion and switching applications. The following are typical application scenarios for this type of MOSFET:

#### a) **Power converter and battery management system**
In **DC-DC converter** and **AC-DC power converter**, **SQD40N04-10A-GE3-VB** can be used to provide efficient power conversion. Its **low RDS(ON)** characteristics can significantly reduce conduction losses and improve conversion efficiency. Especially in **Battery Management System (BMS)**, it can effectively control battery charging and discharging to ensure efficient operation of the system.

#### b) **Power Tools and Battery-Driven Devices**
In **power tools** (such as electric drills, electric saws, etc.) and **battery-driven devices**, **SQD40N04-10A-GE3-VB** can be used as a power switching element to help manage battery current and achieve efficient battery energy conversion. Due to its high current carrying capacity and low loss characteristics, it can cope with high loads and high power requirements, ensuring stable operation of power tools in harsh environments.

#### c) **High-Efficiency LED Driver**
**SQD40N04-10A-GE3-VB** is also suitable for **LED driver**, especially for high-efficiency lighting systems that require low on-resistance. This MOSFET can optimize the energy efficiency of **LED driver** through fast switching and low loss characteristics, improve brightness output, reduce heat generation, and extend the life of LEDs.

#### d) **Automotive Electronics**
In **automotive electronic systems**, especially **Battery Management Systems (BMS)** and **Power Regulators**, this MOSFET can be used for high current switching operations, managing battery charge, regulating motor or battery charging voltage, etc. Its **high current capability (85A)** and **low on-resistance** characteristics make it suitable for the stringent requirements for energy efficiency and reliability in automobiles.

#### e) **Industrial Power and Motor Control**
In **Industrial Power** and **Motor Control Systems**, the **SQD40N04-10A-GE3-VB** can be used as an efficient switching device. Especially in application scenarios that require fast switching and high current loads, this MOSFET can ensure efficient control, reduce power loss, and can work stably in harsh environments.

#### f) **Consumer Electronics and Home Appliances**
In **consumer electronic devices** (such as wireless power adapters, chargers, etc.) and **home appliances** (such as refrigerators, air conditioners, etc.), MOSFETs are used for efficient power conversion to ensure stable power supply and power management of electronic devices. **SQD40N04-10A-GE3-VB** provides efficient power switching functions to optimize the energy efficiency of these devices.

#### g) **Power Protection and Voltage Regulation**
This MOSFET is suitable for **power protection circuits**, especially systems that require high current and fast switching response. In **voltage regulation modules**, it can help the system quickly cut off the current in overvoltage or short circuit conditions to protect sensitive components from damage.

### Summary

**SQD40N04-10A-GE3-VB** is a **40V single N-channel MOSFET** with **low RDS(ON)** and **high current carrying capability**. It is widely used in **power conversion, LED drive, battery management, industrial power supply, power tools, automotive electronics and other fields**. Its **low on-resistance (5mΩ)** and **85A high current capability** make it very suitable for high-efficiency power management and high-power switch control scenarios.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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