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SQD30N05-20L-GE3-VB Product details
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Product Introduction
SQD30N05-20L-GE3-VB is a high-performance N-type MOSFET in TO252 package with 60V drain-source voltage (VDS) and maximum drain current (ID) of 58A. Based on Trench technology, this MOSFET provides low on-resistance (RDS(ON) = 13mΩ @ VGS = 4.5V and 10mΩ @ VGS = 10V), which enables extremely low power loss and excellent efficiency in high current applications. It is widely used in high-efficiency switching control systems such as power management, battery charging, DC-DC converters, etc., and is suitable for multiple fields, including consumer electronics, automotive electronics, industrial control and battery-powered systems.
SQD30N05-20L-GE3-VB is a high-performance N-type MOSFET in TO252 package with 60V drain-source voltage (VDS) and maximum drain current (ID) of 58A. Based on Trench technology, this MOSFET provides low on-resistance (RDS(ON) = 13mΩ @ VGS = 4.5V and 10mΩ @ VGS = 10V), which enables extremely low power loss and excellent efficiency in high current applications. It is widely used in high-efficiency switching control systems such as power management, battery charging, DC-DC converters, etc., and is suitable for multiple fields, including consumer electronics, automotive electronics, industrial control and battery-powered systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | 10mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package**: TO252
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 13mΩ @ VGS = 4.5V
- 10mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 58A
- **Technology**: Trench
- **Maximum power loss**: About 3W (assuming maximum current and on-resistance)
- **Maximum junction temperature**: 150°C
- **Operating temperature range**: -55°C to 150°C
- **Quiet leakage current (IDSS)**: ≤10μA @ VDS=60V
- **Input capacitance (Ciss)**: Approx. 1800pF @ VGS=0V
- **Output capacitance (Coss)**: Approx. 80pF @ VDS=60V
- **Junction-to-case thermal resistance**: Approx. 60°C/W
- **Package**: TO252
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 13mΩ @ VGS = 4.5V
- 10mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 58A
- **Technology**: Trench
- **Maximum power loss**: About 3W (assuming maximum current and on-resistance)
- **Maximum junction temperature**: 150°C
- **Operating temperature range**: -55°C to 150°C
- **Quiet leakage current (IDSS)**: ≤10μA @ VDS=60V
- **Input capacitance (Ciss)**: Approx. 1800pF @ VGS=0V
- **Output capacitance (Coss)**: Approx. 80pF @ VDS=60V
- **Junction-to-case thermal resistance**: Approx. 60°C/W
Domain and module applications：
Applicable fields and modules
1. **High-efficiency power management system**:
SQD30N05-20L-GE3-VB is a MOSFET that is very suitable for high-efficiency power management systems, especially in DC-DC converters, power management systems and battery chargers. Its low on-resistance and high current carrying capacity ensure efficient operation and low heat loss of the system, and is particularly suitable for high-efficiency power conversion and power management.
2. **Battery Management System (BMS)**:
In the battery management system, SQD30N05-20L-GE3-VB can be used as a switching element to control the charging and discharging process of the battery. The maximum current carrying capacity of up to 58A makes it very suitable for high-current battery management, especially for the charge and discharge control of lithium batteries and other high energy density batteries.
3. **Automotive electronics and electric vehicles**:
For automotive electronics, especially electric vehicles (EV) and hybrid electric vehicles (HEV) applications, SQD30N05-20L-GE3-VB provides reliable current switching functions for battery management systems, drive circuits, inverters and power supply modules. Its efficient switching performance and low on-resistance can minimize the power loss of the system and ensure the stability and efficiency of the system.
4. **Industrial control and power systems**:
In industrial automation, industrial control systems and power conversion equipment, SQD30N05-20L-GE3-VB is widely used in current control, switching power supplies, UPS power supplies and other power modules. Its high current capability and low thermal resistance make it an ideal choice for power management in industrial equipment, especially for high-load, long-term operation environments.
5. **Consumer Electronics and Communication Equipment**:
The SQD30N05-20L-GE3-VB is also suitable for power management of consumer electronics and communication equipment, such as smartphone chargers, power tools, and smart home devices. Due to its compact TO252 package, it is ideal for applications with limited size and can provide efficient and stable power control.
6. **LED Drive Circuit**:
This MOSFET can be used in LED drive circuits as an efficient switching component, especially in high-power LED systems. Low on-resistance and high current carrying capacity enable efficient current switching in LED lighting systems, reducing power losses and improving system stability.
7. **Portable Power Module**:
For portable power systems such as mobile power supplies, rechargeable batteries, and wireless devices, the SQD30N05-20L-GE3-VB can save space while ensuring high efficiency. Its low power consumption enables it to provide longer use time in small devices, meeting the high requirements of portable devices for power control.
1. **High-efficiency power management system**:
SQD30N05-20L-GE3-VB is a MOSFET that is very suitable for high-efficiency power management systems, especially in DC-DC converters, power management systems and battery chargers. Its low on-resistance and high current carrying capacity ensure efficient operation and low heat loss of the system, and is particularly suitable for high-efficiency power conversion and power management.
2. **Battery Management System (BMS)**:
In the battery management system, SQD30N05-20L-GE3-VB can be used as a switching element to control the charging and discharging process of the battery. The maximum current carrying capacity of up to 58A makes it very suitable for high-current battery management, especially for the charge and discharge control of lithium batteries and other high energy density batteries.
3. **Automotive electronics and electric vehicles**:
For automotive electronics, especially electric vehicles (EV) and hybrid electric vehicles (HEV) applications, SQD30N05-20L-GE3-VB provides reliable current switching functions for battery management systems, drive circuits, inverters and power supply modules. Its efficient switching performance and low on-resistance can minimize the power loss of the system and ensure the stability and efficiency of the system.
4. **Industrial control and power systems**:
In industrial automation, industrial control systems and power conversion equipment, SQD30N05-20L-GE3-VB is widely used in current control, switching power supplies, UPS power supplies and other power modules. Its high current capability and low thermal resistance make it an ideal choice for power management in industrial equipment, especially for high-load, long-term operation environments.
5. **Consumer Electronics and Communication Equipment**:
The SQD30N05-20L-GE3-VB is also suitable for power management of consumer electronics and communication equipment, such as smartphone chargers, power tools, and smart home devices. Due to its compact TO252 package, it is ideal for applications with limited size and can provide efficient and stable power control.
6. **LED Drive Circuit**:
This MOSFET can be used in LED drive circuits as an efficient switching component, especially in high-power LED systems. Low on-resistance and high current carrying capacity enable efficient current switching in LED lighting systems, reducing power losses and improving system stability.
7. **Portable Power Module**:
For portable power systems such as mobile power supplies, rechargeable batteries, and wireless devices, the SQD30N05-20L-GE3-VB can save space while ensuring high efficiency. Its low power consumption enables it to provide longer use time in small devices, meeting the high requirements of portable devices for power control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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