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SQD100N03-3M4-VB Product details
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SQD100N03-3M4-VB MOSFET Product Introduction
SQD100N03-3M4-VB is a single N-Channel MOSFET in TO252 package, designed for low voltage, high efficiency applications. The maximum drain-source voltage (VDS) of this MOSFET is 30V, the gate-source voltage (VGS) is ±20V, and it has a low threshold voltage (Vth) of 1.7V. Its on-resistance (RDS(ON)) is 2mΩ at VGS = 10V and 3mΩ at VGS = 4.5V, which can provide extremely low switching losses and high current transfer capability (maximum drain current ID is 120A). SQD100N03-3M4-VB uses Trench technology and is suitable for multiple applications such as high-efficiency power management, power conversion and load control.
SQD100N03-3M4-VB is a single N-Channel MOSFET in TO252 package, designed for low voltage, high efficiency applications. The maximum drain-source voltage (VDS) of this MOSFET is 30V, the gate-source voltage (VGS) is ±20V, and it has a low threshold voltage (Vth) of 1.7V. Its on-resistance (RDS(ON)) is 2mΩ at VGS = 10V and 3mΩ at VGS = 4.5V, which can provide extremely low switching losses and high current transfer capability (maximum drain current ID is 120A). SQD100N03-3M4-VB uses Trench technology and is suitable for multiple applications such as high-efficiency power management, power conversion and load control.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 120A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
SQD100N03-3M4-VB MOSFET Detailed Parameter Description
| **Parameter** | **Description** |
|-----------------------|-------------------------------------------------|
| **Package** | TO252 package|
| **Configuration** | Single N-Channel MOSFET |
| **Drain-Source Voltage(VDS)** | 30V |
| **Gate-Source Voltage(VGS)** | ±20V |
| **Threshold Voltage(Vth)** | 1.7V |
| **On-Resistance(RDS(ON))** | 3mΩ @ VGS=4.5V, 2mΩ @ VGS=10V |
| **Maximum Drain Current(ID)** | 120A |
| **Technology** | Trench Technology|
| **Parameter** | **Description** |
|-----------------------|-------------------------------------------------|
| **Package** | TO252 package|
| **Configuration** | Single N-Channel MOSFET |
| **Drain-Source Voltage(VDS)** | 30V |
| **Gate-Source Voltage(VGS)** | ±20V |
| **Threshold Voltage(Vth)** | 1.7V |
| **On-Resistance(RDS(ON))** | 3mΩ @ VGS=4.5V, 2mΩ @ VGS=10V |
| **Maximum Drain Current(ID)** | 120A |
| **Technology** | Trench Technology|
Domain and module applications：
Applications and modules of SQD100N03-3M4-VB MOSFET
1. **High-Efficiency Power Conversion**
SQD100N03-3M4-VB has a very low on-resistance, which makes it provide extremely low power loss in power conversion applications. Therefore, it is very suitable for DC-DC converters, voltage regulation modules, and switching power supplies (SMPS). Its fast switching performance and low RDS(ON) can significantly improve power conversion efficiency and reduce heat accumulation.
2. **Motor Driver**
Due to its low on-resistance and high current carrying capacity, SQD100N03-3M4-VB is very effective in motor drive applications. It is particularly suitable for DC motor drive systems, where it can achieve efficient and precise current control. It is widely used in industrial automation, robot control, home appliances, and power tools.
3. **Power Amplifiers**
This MOSFET can also be used in power amplifiers, especially in audio amplifiers or radio frequency (RF) power amplifier circuits. Due to its low on-resistance and fast response time, the SQD100N03-3M4-VB can effectively reduce power losses and ensure stable output power and efficiency.
4. **Load Switches**
The low RDS(ON) and high current capability of the SQD100N03-3M4-VB make it an ideal choice for load switch applications. In mobile devices, embedded systems, smart homes, and consumer electronics, MOSFETs are often used to control high-power loads or provide power to loads to reduce energy loss in the system.
5. **Battery Management Systems**
SQD100N03-3M4-VB can be used in battery management systems (BMS), especially in battery protection and energy regulation modules for electric vehicles (EV) and portable devices. It can achieve precise battery charge and discharge control, improve battery efficiency, and extend battery life.
6. **Automotive Electronics**
In automotive electronic systems, SQD100N03-3M4-VB can be used for efficient power conversion and load switch control, especially in battery management systems, motor drive control, and electric steering systems for electric and hybrid vehicles. Its low RDS(ON) provides lower energy loss and can improve the overall energy efficiency of the system.
7. **Power Management Systems**
In power management systems, SQD100N03-3M4-VB can be used to optimize power distribution and reduce heat loss in power modules. Suitable for embedded systems, power adapters, chargers, UPS and other devices to improve overall power efficiency and reliability.
1. **High-Efficiency Power Conversion**
SQD100N03-3M4-VB has a very low on-resistance, which makes it provide extremely low power loss in power conversion applications. Therefore, it is very suitable for DC-DC converters, voltage regulation modules, and switching power supplies (SMPS). Its fast switching performance and low RDS(ON) can significantly improve power conversion efficiency and reduce heat accumulation.
2. **Motor Driver**
Due to its low on-resistance and high current carrying capacity, SQD100N03-3M4-VB is very effective in motor drive applications. It is particularly suitable for DC motor drive systems, where it can achieve efficient and precise current control. It is widely used in industrial automation, robot control, home appliances, and power tools.
3. **Power Amplifiers**
This MOSFET can also be used in power amplifiers, especially in audio amplifiers or radio frequency (RF) power amplifier circuits. Due to its low on-resistance and fast response time, the SQD100N03-3M4-VB can effectively reduce power losses and ensure stable output power and efficiency.
4. **Load Switches**
The low RDS(ON) and high current capability of the SQD100N03-3M4-VB make it an ideal choice for load switch applications. In mobile devices, embedded systems, smart homes, and consumer electronics, MOSFETs are often used to control high-power loads or provide power to loads to reduce energy loss in the system.
5. **Battery Management Systems**
SQD100N03-3M4-VB can be used in battery management systems (BMS), especially in battery protection and energy regulation modules for electric vehicles (EV) and portable devices. It can achieve precise battery charge and discharge control, improve battery efficiency, and extend battery life.
6. **Automotive Electronics**
In automotive electronic systems, SQD100N03-3M4-VB can be used for efficient power conversion and load switch control, especially in battery management systems, motor drive control, and electric steering systems for electric and hybrid vehicles. Its low RDS(ON) provides lower energy loss and can improve the overall energy efficiency of the system.
7. **Power Management Systems**
In power management systems, SQD100N03-3M4-VB can be used to optimize power distribution and reduce heat loss in power modules. Suitable for embedded systems, power adapters, chargers, UPS and other devices to improve overall power efficiency and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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