中文
English
SQD100N03-3M2L-GE3-VB Product details
Back to previous pageProduct introduction：
1. **SQD100N03-3M2L-GE3 Product Introduction**
SQD100N03-3M2L-GE3 is a single N-channel MOSFET in TO252 package, suitable for low voltage (maximum VDS is 30V) and high current (maximum ID is 120A) applications. This MOSFET is designed with Trench technology and has very low on-resistance (RDS(ON) is 3mΩ @ VGS=4.5V and 2mΩ @ VGS=10V), which makes it excel in high-efficiency current switching applications. With a maximum gate-source voltage (VGS) of 20V and a turn-on voltage threshold (Vth) of 1.7V, it is suitable for high-frequency and high-power density power management, load switching, and battery management systems. SQD100N03-3M2L-GE3 provides extremely low on-resistance and high switching speed, suitable for use in multiple applications requiring high efficiency and high current carrying capacity.
SQD100N03-3M2L-GE3 is a single N-channel MOSFET in TO252 package, suitable for low voltage (maximum VDS is 30V) and high current (maximum ID is 120A) applications. This MOSFET is designed with Trench technology and has very low on-resistance (RDS(ON) is 3mΩ @ VGS=4.5V and 2mΩ @ VGS=10V), which makes it excel in high-efficiency current switching applications. With a maximum gate-source voltage (VGS) of 20V and a turn-on voltage threshold (Vth) of 1.7V, it is suitable for high-frequency and high-power density power management, load switching, and battery management systems. SQD100N03-3M2L-GE3 provides extremely low on-resistance and high switching speed, suitable for use in multiple applications requiring high efficiency and high current carrying capacity.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 120A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. **SQD100N03-3M2L-GE3 Detailed Parameters**
- **Package Type**: TO252
- **Configuration**: Single N-channel MOSFET
- **Maximum Drain-Source Voltage (VDS)**: 30V
- **Maximum Gate-Source Voltage (VGS)**: ±20V
- **Turning Threshold Voltage (Vth)**: 1.7V
- **On-Resistance (RDS(ON))**:
- 3mΩ @ VGS = 4.5V
- 2mΩ @ VGS = 10V
- **Maximum Drain Current (ID)**: 120A
- **Technology**: Trench Technology
- **Maximum Power Dissipation (Pd)**: Approximately 1.3W, depending on heat dissipation conditions
- **Operating Temperature Range**: -55°C to +150°C
- **Applicable voltage range**: Suitable for low voltage and high current applications, providing extremely low resistance and high-efficiency switching
- **Packaging characteristics**: TO252 package is suitable for high power density applications and supports better heat dissipation capabilities
- **Package Type**: TO252
- **Configuration**: Single N-channel MOSFET
- **Maximum Drain-Source Voltage (VDS)**: 30V
- **Maximum Gate-Source Voltage (VGS)**: ±20V
- **Turning Threshold Voltage (Vth)**: 1.7V
- **On-Resistance (RDS(ON))**:
- 3mΩ @ VGS = 4.5V
- 2mΩ @ VGS = 10V
- **Maximum Drain Current (ID)**: 120A
- **Technology**: Trench Technology
- **Maximum Power Dissipation (Pd)**: Approximately 1.3W, depending on heat dissipation conditions
- **Operating Temperature Range**: -55°C to +150°C
- **Applicable voltage range**: Suitable for low voltage and high current applications, providing extremely low resistance and high-efficiency switching
- **Packaging characteristics**: TO252 package is suitable for high power density applications and supports better heat dissipation capabilities
Domain and module applications：
3. **Application fields and module examples of SQD100N03-3M2L-GE3**
- **Power Management**:
SQD100N03-3M2L-GE3 is very suitable for power management systems, especially in DC-DC converters, power regulators and buck converters that require high efficiency and low resistance. Its low on-resistance and high switching efficiency can significantly improve power conversion efficiency, reduce power loss and improve overall system performance.
- **Load Switching**:
This MOSFET has an extremely low on-resistance, making it very useful in load switching applications. It can effectively control high current loads, especially in high-efficiency load switching circuits in computer power supplies, communication power supplies or other industrial applications, ensuring stable current flow and load control.
- **Battery Management Systems**:
SQD100N03-3M2L-GE3 performs well in battery management systems (BMS), especially in battery charge and discharge management of electric vehicles (EV) and other mobile devices. Its low RDS(ON) value ensures energy efficiency and temperature rise control during battery charge and discharge, and is suitable for battery management applications that require high current switching.
- **Electric Drive Systems**:
In electric drive systems, SQD100N03-3M2L-GE3 can be used for power switching applications in power tools, electric vehicles or robot control systems. Its low on-resistance and fast switching characteristics enable it to efficiently control the forward and reverse rotation and speed regulation of the motor.
- **Inverters**:
SQD100N03-3M2L-GE3 can be used in solar inverters, power conversion modules of wind power generation systems, and other power electronic devices. Low on-resistance ensures efficient power conversion, while fast switching response can improve the efficiency of the inverter and adapt to different load changes.
- **Power Tools**:
In power tools and household appliances, SQD100N03-3M2L-GE3 can be used as a power switching element in motor drive circuits to provide high current and high efficiency working conditions. It performs stably in low voltage and high current environments, ensuring that power tools can still operate stably under high load conditions.
- **Automotive Electronics**:
In automotive electronic systems, SQD100N03-3M2L-GE3 is suitable for a variety of applications such as on-board power management, load control, battery management, etc., especially in the battery pack and power management system of electric vehicles, it can provide efficient current control, reduce energy loss, and improve the overall energy efficiency of electric vehicles.
- **Power Management**:
SQD100N03-3M2L-GE3 is very suitable for power management systems, especially in DC-DC converters, power regulators and buck converters that require high efficiency and low resistance. Its low on-resistance and high switching efficiency can significantly improve power conversion efficiency, reduce power loss and improve overall system performance.
- **Load Switching**:
This MOSFET has an extremely low on-resistance, making it very useful in load switching applications. It can effectively control high current loads, especially in high-efficiency load switching circuits in computer power supplies, communication power supplies or other industrial applications, ensuring stable current flow and load control.
- **Battery Management Systems**:
SQD100N03-3M2L-GE3 performs well in battery management systems (BMS), especially in battery charge and discharge management of electric vehicles (EV) and other mobile devices. Its low RDS(ON) value ensures energy efficiency and temperature rise control during battery charge and discharge, and is suitable for battery management applications that require high current switching.
- **Electric Drive Systems**:
In electric drive systems, SQD100N03-3M2L-GE3 can be used for power switching applications in power tools, electric vehicles or robot control systems. Its low on-resistance and fast switching characteristics enable it to efficiently control the forward and reverse rotation and speed regulation of the motor.
- **Inverters**:
SQD100N03-3M2L-GE3 can be used in solar inverters, power conversion modules of wind power generation systems, and other power electronic devices. Low on-resistance ensures efficient power conversion, while fast switching response can improve the efficiency of the inverter and adapt to different load changes.
- **Power Tools**:
In power tools and household appliances, SQD100N03-3M2L-GE3 can be used as a power switching element in motor drive circuits to provide high current and high efficiency working conditions. It performs stably in low voltage and high current environments, ensuring that power tools can still operate stably under high load conditions.
- **Automotive Electronics**:
In automotive electronic systems, SQD100N03-3M2L-GE3 is suitable for a variety of applications such as on-board power management, load control, battery management, etc., especially in the battery pack and power management system of electric vehicles, it can provide efficient current control, reduce energy loss, and improve the overall energy efficiency of electric vehicles.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
