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SQD07N25-350H-GE3-VB Product details
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1. **SQD07N25-350H-GE3-VB Product Introduction**
**SQD07N25-350H-GE3-VB** is a **single N-channel MOSFET**, using **TO252 package**, widely used in medium and low voltage power conversion and switch control fields. The **maximum drain-source voltage (VDS)** of this device is **250V**, with high voltage tolerance, suitable for various applications of **power management** and **load control**. Its **threshold voltage (Vth)** is **3.5V**, suitable for low voltage control systems, with a lower turn-on voltage.
The **on resistance (RDS(ON))** of the MOSFET is **176mΩ** at **VGS=10V**, providing low conduction loss, suitable for efficient power conversion and switching operations. The maximum **drain current (ID)** is **17A**, ensuring that it can still work stably under large load conditions, suitable for use in high current load applications. Using **Trench technology**, this MOSFET features fast response and low power consumption, enabling high efficiency in switching operations.
**SQD07N25-350H-GE3-VB** is a **single N-channel MOSFET**, using **TO252 package**, widely used in medium and low voltage power conversion and switch control fields. The **maximum drain-source voltage (VDS)** of this device is **250V**, with high voltage tolerance, suitable for various applications of **power management** and **load control**. Its **threshold voltage (Vth)** is **3.5V**, suitable for low voltage control systems, with a lower turn-on voltage.
The **on resistance (RDS(ON))** of the MOSFET is **176mΩ** at **VGS=10V**, providing low conduction loss, suitable for efficient power conversion and switching operations. The maximum **drain current (ID)** is **17A**, ensuring that it can still work stably under large load conditions, suitable for use in high current load applications. Using **Trench technology**, this MOSFET features fast response and low power consumption, enabling high efficiency in switching operations.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 250V | 3.5V | 17A | 176mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 250V | 3.5V | 17A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 250V | 3.5V | 17A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. **Detailed parameter description**
- **Model**: SQD07N25-350H-GE3-VB
- **Package type**: TO252
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 250V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- **176mΩ** @ VGS = 10V
- **Maximum drain current (ID)**: 17A
- **Technology**: Trench
- **Applicable environment**: Suitable for a variety of power control and high-efficiency switching applications such as power switching, battery management, and voltage regulation.
- **Model**: SQD07N25-350H-GE3-VB
- **Package type**: TO252
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 250V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- **176mΩ** @ VGS = 10V
- **Maximum drain current (ID)**: 17A
- **Technology**: Trench
- **Applicable environment**: Suitable for a variety of power control and high-efficiency switching applications such as power switching, battery management, and voltage regulation.
Domain and module applications：
3. **Application fields and module examples**
**SQD07N25-350H-GE3-VB** is a MOSFET suitable for medium voltage power control. It can operate at a voltage of **250V** and provide low on-resistance. The following are typical application scenarios of this model MOSFET:
#### a) **Power management system**
**SQD07N25-350H-GE3-VB** is widely used in **power management systems**, especially **DC-DC converters** and **power regulators**. Through low **RDS(ON)** and efficient switching performance, it can improve conversion efficiency, reduce heat and power loss, and is suitable for **medium power modules** and **high-efficiency power supply designs**.
#### b) **Battery management system (BMS)**
In **Battery management system** (BMS), this MOSFET can be used for **battery charging and discharging management**. Its **17A** drain current** can carry the larger current during battery discharge and quickly switch the switch state, thereby protecting the battery and extending its service life.
#### c) **Power tool power supply**
In **power tools**, **SQD07N25-350H-GE3-VB** can be used as a power switch to help manage battery current and ensure stable operation of power tools under high current loads. Low on-resistance and high current capability make it suitable for battery protection and current regulation in **high-power power tools**.
#### d) **LED driver power supply**
This MOSFET is also suitable for **LED driver power supply**, especially in high-efficiency lighting systems that require stable current regulation. **SQD07N25-350H-GE3-VB** provides low loss and high-efficiency switching capabilities, which can ensure stable operation of LED lighting systems while reducing energy losses.
#### e) **Home Appliance Power Management**
In **home appliances** (such as air conditioners, electric fans, refrigerators, etc.), **SQD07N25-350H-GE3-VB** can be used as a power switch device for power management systems with high current loads. Low **RDS(ON)** and high current capability make it suitable for controlling high power supplies, providing reliable power conversion and load regulation.
#### f) **Industrial Power and Motor Drive**
In **industrial control systems**, especially **motor drive systems**, this MOSFET can be used as a switching element to help motors start and stop efficiently. Its high current carrying capacity makes it suitable for motor drive applications that require high power and high efficiency.
#### g) **Automotive power supply**
In **automotive electronic systems**, **SQD07N25-350H-GE3-VB** can be used in **Battery Management System (BMS)** and **Power Converter** to provide stable power management functions for vehicle electrical systems. Due to its high withstand voltage characteristics, it is suitable for use in high-voltage electrical systems.
### Summary
**SQD07N25-350H-GE3-VB** is a **250V N-channel MOSFET** for medium and high voltage power control applications with **low on-resistance (176mΩ)** and **high current carrying capacity (17A)**. Its high efficiency and low power consumption make it very suitable for **power management, LED driving, battery management, power tools, home appliances and other fields**.
**SQD07N25-350H-GE3-VB** is a MOSFET suitable for medium voltage power control. It can operate at a voltage of **250V** and provide low on-resistance. The following are typical application scenarios of this model MOSFET:
#### a) **Power management system**
**SQD07N25-350H-GE3-VB** is widely used in **power management systems**, especially **DC-DC converters** and **power regulators**. Through low **RDS(ON)** and efficient switching performance, it can improve conversion efficiency, reduce heat and power loss, and is suitable for **medium power modules** and **high-efficiency power supply designs**.
#### b) **Battery management system (BMS)**
In **Battery management system** (BMS), this MOSFET can be used for **battery charging and discharging management**. Its **17A** drain current** can carry the larger current during battery discharge and quickly switch the switch state, thereby protecting the battery and extending its service life.
#### c) **Power tool power supply**
In **power tools**, **SQD07N25-350H-GE3-VB** can be used as a power switch to help manage battery current and ensure stable operation of power tools under high current loads. Low on-resistance and high current capability make it suitable for battery protection and current regulation in **high-power power tools**.
#### d) **LED driver power supply**
This MOSFET is also suitable for **LED driver power supply**, especially in high-efficiency lighting systems that require stable current regulation. **SQD07N25-350H-GE3-VB** provides low loss and high-efficiency switching capabilities, which can ensure stable operation of LED lighting systems while reducing energy losses.
#### e) **Home Appliance Power Management**
In **home appliances** (such as air conditioners, electric fans, refrigerators, etc.), **SQD07N25-350H-GE3-VB** can be used as a power switch device for power management systems with high current loads. Low **RDS(ON)** and high current capability make it suitable for controlling high power supplies, providing reliable power conversion and load regulation.
#### f) **Industrial Power and Motor Drive**
In **industrial control systems**, especially **motor drive systems**, this MOSFET can be used as a switching element to help motors start and stop efficiently. Its high current carrying capacity makes it suitable for motor drive applications that require high power and high efficiency.
#### g) **Automotive power supply**
In **automotive electronic systems**, **SQD07N25-350H-GE3-VB** can be used in **Battery Management System (BMS)** and **Power Converter** to provide stable power management functions for vehicle electrical systems. Due to its high withstand voltage characteristics, it is suitable for use in high-voltage electrical systems.
### Summary
**SQD07N25-350H-GE3-VB** is a **250V N-channel MOSFET** for medium and high voltage power control applications with **low on-resistance (176mΩ)** and **high current carrying capacity (17A)**. Its high efficiency and low power consumption make it very suitable for **power management, LED driving, battery management, power tools, home appliances and other fields**.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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