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SQ3469EV-T1-GE3-VB Product details
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1. **SQ3469EV-T1-GE3 Product Introduction**
SQ3469EV-T1-GE3 is a single P-channel MOSFET in SOT23-6 package with a maximum drain-source voltage (VDS) of -30V and a maximum drain current (ID) of -4.8A. This MOSFET is manufactured using Trench technology and is suitable for small and medium power switching applications. Its gate-source voltage (VGS) is ±20V and has a turn-on voltage threshold (Vth) of -1.7V. At VGS = 10V, its on-resistance (RDS(ON)) is 49mΩ, with low conduction loss, suitable for efficient power management and switch control. SQ3469EV-T1-GE3 is mainly used in low-power drive circuits, power converters, portable electronic devices and other circuits requiring efficient switching.
SQ3469EV-T1-GE3 is a single P-channel MOSFET in SOT23-6 package with a maximum drain-source voltage (VDS) of -30V and a maximum drain current (ID) of -4.8A. This MOSFET is manufactured using Trench technology and is suitable for small and medium power switching applications. Its gate-source voltage (VGS) is ±20V and has a turn-on voltage threshold (Vth) of -1.7V. At VGS = 10V, its on-resistance (RDS(ON)) is 49mΩ, with low conduction loss, suitable for efficient power management and switch control. SQ3469EV-T1-GE3 is mainly used in low-power drive circuits, power converters, portable electronic devices and other circuits requiring efficient switching.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | 49mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P |
2. **SQ3469EV-T1-GE3 detailed parameter description**
- **Package**: SOT23-6
- **Configuration**: Single P-channel MOSFET
- **Maximum drain-source voltage (VDS)**: -30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Turn-on voltage threshold (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 54mΩ @ VGS = 4.5V
- 49mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: -4.8A
- **Technology**: Trench technology
- **Operating temperature range**: -55°C to +150°C
- **Maximum power dissipation (Pd)**: Approximately 1.0W, depending on heat dissipation conditions.
- **Package Features**: The SOT23-6 package is suitable for applications where space is limited and efficient thermal management is required.
- **Package**: SOT23-6
- **Configuration**: Single P-channel MOSFET
- **Maximum drain-source voltage (VDS)**: -30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Turn-on voltage threshold (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 54mΩ @ VGS = 4.5V
- 49mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: -4.8A
- **Technology**: Trench technology
- **Operating temperature range**: -55°C to +150°C
- **Maximum power dissipation (Pd)**: Approximately 1.0W, depending on heat dissipation conditions.
- **Package Features**: The SOT23-6 package is suitable for applications where space is limited and efficient thermal management is required.
Domain and module applications：
3. **Application fields and module examples of SQ3469EV-T1-GE3**
- **Power Management**:
SQ3469EV-T1-GE3 can be widely used in power management modules, especially in situations where low on-resistance and efficient switching are required, such as DC-DC converters, buck converters, and battery management systems. Its 30V withstand voltage and 4.8A leakage current are suitable for small and medium power power conversion, which can effectively improve system efficiency and reduce energy loss.
- **Portable Electronics**:
In portable devices (such as smartphones, tablets, portable battery chargers, etc.), SQ3469EV-T1-GE3 can be used for power switch control. The low on-resistance of MOSFET means that the device can achieve efficient power conversion in a smaller size, helping to extend battery life and reduce overheating.
- **Load Switches**:
SQ3469EV-T1-GE3 is suitable for load switching applications, especially for switching control of low-voltage loads. Its low RDS(ON) characteristics ensure that power loss is kept small during switching, and is suitable for loads that require frequent switching, such as USB power interfaces, LED driver circuits, and other low-power switching applications.
- **Battery Management Systems**:
In battery management systems (BMS), SQ3469EV-T1-GE3 can be used as a battery switch element. Due to its low on-resistance and reliable switching performance, it can ensure efficient management of battery charging and discharging, prevent battery overcharging or over-discharging, and improve system stability and safety.
- **Efficient Power Converters**:
In applications such as switching power supplies (SMPS), boost/buck converters, SQ3469EV-T1-GE3 is an ideal choice. Its low on-resistance and high switching speed enable its use in high-efficiency energy conversion systems, especially in application scenarios that require high-frequency switching and low-power operation.
- **Automotive Electronics**:
In automotive electronic systems, the SQ3469EV-T1-GE3 can be used as a switching element in various low-power control modules. For example, as a switch in an automotive battery management system, it can effectively manage the vehicle's power distribution and energy conversion, ensuring effective connection and protection between the battery and electrical equipment.
- **Communication Equipment**:
In communication equipment, the SQ3469EV-T1-GE3 can be used as a power switching element for power regulation and battery management systems. Its high switching speed and low on-resistance make it ideal for communication applications that require fast response and efficient energy transfer.
- **Power Management**:
SQ3469EV-T1-GE3 can be widely used in power management modules, especially in situations where low on-resistance and efficient switching are required, such as DC-DC converters, buck converters, and battery management systems. Its 30V withstand voltage and 4.8A leakage current are suitable for small and medium power power conversion, which can effectively improve system efficiency and reduce energy loss.
- **Portable Electronics**:
In portable devices (such as smartphones, tablets, portable battery chargers, etc.), SQ3469EV-T1-GE3 can be used for power switch control. The low on-resistance of MOSFET means that the device can achieve efficient power conversion in a smaller size, helping to extend battery life and reduce overheating.
- **Load Switches**:
SQ3469EV-T1-GE3 is suitable for load switching applications, especially for switching control of low-voltage loads. Its low RDS(ON) characteristics ensure that power loss is kept small during switching, and is suitable for loads that require frequent switching, such as USB power interfaces, LED driver circuits, and other low-power switching applications.
- **Battery Management Systems**:
In battery management systems (BMS), SQ3469EV-T1-GE3 can be used as a battery switch element. Due to its low on-resistance and reliable switching performance, it can ensure efficient management of battery charging and discharging, prevent battery overcharging or over-discharging, and improve system stability and safety.
- **Efficient Power Converters**:
In applications such as switching power supplies (SMPS), boost/buck converters, SQ3469EV-T1-GE3 is an ideal choice. Its low on-resistance and high switching speed enable its use in high-efficiency energy conversion systems, especially in application scenarios that require high-frequency switching and low-power operation.
- **Automotive Electronics**:
In automotive electronic systems, the SQ3469EV-T1-GE3 can be used as a switching element in various low-power control modules. For example, as a switch in an automotive battery management system, it can effectively manage the vehicle's power distribution and energy conversion, ensuring effective connection and protection between the battery and electrical equipment.
- **Communication Equipment**:
In communication equipment, the SQ3469EV-T1-GE3 can be used as a power switching element for power regulation and battery management systems. Its high switching speed and low on-resistance make it ideal for communication applications that require fast response and efficient energy transfer.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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