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SPW15N60CFD-VB Product details
Back to previous pageProduct introduction：
1. **Product Introduction**:
SPW15N60CFD-VB is a single N-type MOSFET in TO247 package with 650V withstand voltage and 15A maximum leakage current (ID). The device adopts SJ_Multi-EPI technology to provide low on-resistance (RDS(ON) = 300mΩ@VGS = 10V), suitable for high-voltage, high-current power conversion and switching control systems. The 650V VDS of SPW15N60CFD-VB enables it to be widely used in power management and power conversion applications that require high withstand voltage and high power carrying capacity, especially in motor drive, switching power supply (SMPS) and power factor correction circuit (PFC) and other fields, which can effectively improve power efficiency and reduce power loss.
SPW15N60CFD-VB is a single N-type MOSFET in TO247 package with 650V withstand voltage and 15A maximum leakage current (ID). The device adopts SJ_Multi-EPI technology to provide low on-resistance (RDS(ON) = 300mΩ@VGS = 10V), suitable for high-voltage, high-current power conversion and switching control systems. The 650V VDS of SPW15N60CFD-VB enables it to be widely used in power management and power conversion applications that require high withstand voltage and high power carrying capacity, especially in motor drive, switching power supply (SMPS) and power factor correction circuit (PFC) and other fields, which can effectively improve power efficiency and reduce power loss.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 15A | 300mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 15A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 15A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
2. **Detailed parameter description**:
- **Package**: TO247
- **Configuration**: Single N type
- **VDS**: 650V
- **VGS**: ±30V
- **Vth**: 3.5V
- **RDS(ON)**: 300mΩ@VGS=10V
- **ID**: 15A
- **Technology**: SJ_Multi-EPI
- **Package**: TO247
- **Configuration**: Single N type
- **VDS**: 650V
- **VGS**: ±30V
- **Vth**: 3.5V
- **RDS(ON)**: 300mΩ@VGS=10V
- **ID**: 15A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
3. **Application fields and modules**:
The high withstand voltage characteristics of SPW15N60CFD-VB make it very suitable for **high-power power management systems** that require a withstand voltage of 650V. In **switching power supplies (SMPS)** and **DC-DC converters**, this MOSFET can be used as a switching element, especially in **power conversion modules** (such as power adapters and inverters), which can withstand high voltages and effectively convert DC power to the required voltage, providing efficient power conversion. In addition, its low on-resistance enables it to reduce power losses during the switching process and improve the efficiency of the entire power system.
The device is also widely used in **motor drive systems** (such as industrial motor drives, household appliance motor drives, and power tools). It can stably handle high current loads and provide reliable switching control, improving the efficiency of the motor drive system while ensuring stable operation of the system.
In addition, SPW15N60CFD-VB plays an important role in **power factor correction circuits (PFC)**, helping to ensure that the power factor meets expectations, thereby optimizing power efficiency. Its application in **high-voltage inverters** and **power electronic equipment** is equally important, especially in environments that require high voltage resistance and low loss.
In summary, SPW15N60CFD-VB is a high-performance MOSFET that is widely used in **efficient power conversion**, **motor control**, **power factor correction** and other scenarios that require high voltage and high current handling capabilities.
The high withstand voltage characteristics of SPW15N60CFD-VB make it very suitable for **high-power power management systems** that require a withstand voltage of 650V. In **switching power supplies (SMPS)** and **DC-DC converters**, this MOSFET can be used as a switching element, especially in **power conversion modules** (such as power adapters and inverters), which can withstand high voltages and effectively convert DC power to the required voltage, providing efficient power conversion. In addition, its low on-resistance enables it to reduce power losses during the switching process and improve the efficiency of the entire power system.
The device is also widely used in **motor drive systems** (such as industrial motor drives, household appliance motor drives, and power tools). It can stably handle high current loads and provide reliable switching control, improving the efficiency of the motor drive system while ensuring stable operation of the system.
In addition, SPW15N60CFD-VB plays an important role in **power factor correction circuits (PFC)**, helping to ensure that the power factor meets expectations, thereby optimizing power efficiency. Its application in **high-voltage inverters** and **power electronic equipment** is equally important, especially in environments that require high voltage resistance and low loss.
In summary, SPW15N60CFD-VB is a high-performance MOSFET that is widely used in **efficient power conversion**, **motor control**, **power factor correction** and other scenarios that require high voltage and high current handling capabilities.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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