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SPN9971T252-VB Product details

Product introduction:

SPN9971T252-VB Product Introduction:

SPN9971T252-VB is a single N-Channel MOSFET in TO252 package, designed for medium and high power applications. Its maximum drain-source voltage (VDS) is 60V, which can work stably in high voltage environment and is suitable for a variety of power management, switch control and current regulation occasions. The maximum gate-source voltage (VGS) of SPN9971T252-VB is ±20V, which can adapt to a variety of voltage control requirements and has a wide range of applicability. Its threshold voltage (Vth) is 1.7V, which ensures that the MOSFET can be turned on quickly at a lower voltage and provide a fast response.

This MOSFET performs well in on-resistance (RDS(ON)). At VGS=10V, RDS(ON) can be reduced to 25mΩ, ensuring low power loss and heat loss, thereby improving system efficiency. Its maximum drain current (ID) is 45A, which can handle higher currents and is suitable for high-power current scenarios. SPN9971T252-VB uses Trench technology, which has advantages in switching performance and conductive characteristics. It is suitable for high-frequency and high-speed applications, and can improve the overall performance of the system and reduce losses.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 60V 1.7V 45A 25mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-N 60V 1.7V 45A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-N 60V 1.7V 45A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-N
SPN9971T252-VB Detailed parameter description:

- **Package type**: TO252
- **Configuration**: Single N-Channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- RDS(ON) @ VGS = 4.5V: 30mΩ
- RDS(ON) @ VGS = 10V: 25mΩ
- **Maximum drain current (ID)**: 45A
- **Technology**: Trench
- **Operating temperature range**: -55°C ~ 150°C
- **Package size**: TO252, suitable for medium and high power power supply applications, good thermal dissipation performance

Domain and module applications:

SPN9971T252-VB Applications and Modules:

1. **DC-DC Converter and Power Management System**
SPN9971T252-VB is suitable for various DC-DC converters and power management modules. During the power conversion process, the low on-resistance of MOSFET can reduce power loss and improve efficiency, and is particularly suitable for use in mobile devices, battery-powered systems, and high-efficiency power modules. Due to its high current carrying capacity (45A), this MOSFET can support higher power conversion and meet the needs of high current power.

2. **Battery Management System (BMS)**
In the battery management system, SPN9971T252-VB is used for charge and discharge control, battery protection, and battery balancing. Due to its low RDS(ON) and high current handling capability, this MOSFET can effectively reduce power loss during battery charging or discharging, while protecting the battery from damage due to overcurrent or short circuit, ensuring the safety and efficiency of the battery management system.

3. **Power tools and drive circuits**
In power tools and motor drive circuits, SPN9971T252-VB provides efficient switching characteristics and low on-resistance, making it suitable for controlling high-power motor drive systems. Especially in applications that require precise control of motor speed and start and stop, SPN9971T252-VB can ensure smooth current regulation and good thermal management, improving the performance and service life of power tools.

4. **LED driver**
In LED drivers, SPN9971T252-VB can be used to efficiently regulate current and drive high-power LEDs. The low RDS(ON) feature can significantly reduce heat generation and improve the efficiency of the drive circuit. In various lighting applications, especially in high-power LED lighting systems, this MOSFET provides stable and efficient current regulation, helping to extend the service life of LEDs and increase brightness output.

5. **Wireless Communication Equipment and RF Applications**
Due to its excellent switching performance, SPN9971T252-VB is also suitable for power switching applications in wireless communication equipment and radio frequency (RF) systems. Especially in high-frequency applications where high-speed switching is required, the Trench technology of SPN9971T252-VB enables it to respond quickly, reduce energy loss in signal transmission, and improve the working efficiency of the equipment.

6. **Automotive Electronic Systems**
In automotive electronic systems, SPN9971T252-VB can be used for battery management, power control modules, sensors, and motor control in electric vehicles (EVs). The high current carrying capacity and low power loss characteristics of MOSFET make it an ideal choice for high-efficiency power systems in automobiles, ensuring that electric vehicles can operate smoothly under high power loads.

7. **Smart Home and Internet of Things (IoT) Devices**
SPN9971T252-VB can also be used in power control modules for smart home and IoT devices. These devices often require low-power, high-efficiency power management to support long-term reliable operation. Due to its low on-resistance and high current handling capability, the SPN9971T252-VB can be used to ensure that smart home devices operate efficiently and cool, thereby extending the life of the device and reducing maintenance requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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