SPN9910T252RGB-VB Product details
Product introduction:
SPN9910T252RGB-VB is a high-performance single N-type MOSFET in TO252 package, suitable for medium to high power applications, especially in power management, battery management and other fields that require large current carrying capacity. The drain-source voltage (VDS) of this MOSFET is 60V, the gate-source voltage (VGS) is ±20V, and the threshold voltage (Vth) is 2.5V. Its on-resistance RDS(ON) is 13mΩ at VGS=4.5V and 10mΩ at VGS=10V, and the maximum current (ID) is 58A. The use of Trench technology gives it excellent switching performance, low on-resistance and high efficiency, and it is widely used in applications such as power conversion, power amplification and high-efficiency battery drive.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | 10mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
- **Package**: TO252
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**: 13mΩ@VGS=4.5V, 10mΩ@VGS=10V
- **Maximum current (ID)**: 58A
- **Technology**: Trench
- **Operating temperature range**: Typically -55°C to 150°C
- **Application areas**: Power management, DC-DC converters, battery management systems, motor drives, etc.
Domain and module applications:
1. **Power management**: SPN9910T252RGB-VB is very suitable for medium to high power power management systems. Due to its low RDS(ON) and high maximum current capability, it can effectively reduce power loss and improve power conversion efficiency. It is particularly suitable for power modules used for power regulation, voltage regulation and current control.
2. **DC-DC converter**: In DC-DC converters, this MOSFET can be used as an efficient switching element, especially for buck and boost conversion applications. It can work stably under high current and high voltage environments, provide higher conversion efficiency and reduce heat loss.
3. **Battery management system (BMS)**: SPN9910T252RGB-VB is suitable for battery management systems as a switching element to control the charging and discharging process of the battery. Due to its low on-resistance and high current carrying capacity, it can provide stable and reliable performance in battery management modules.
4. **Motor drive**: In motor drive systems, SPN9910T252RGB-VB can be used as a drive switch, especially for high-power power tools, home appliances and electric vehicle drive systems. It can play a role in the speed regulation and control of the motor, ensuring that the motor works in an efficient state.
5. **Power amplifier and high-efficiency power supply system**: This MOSFET can be used in power amplifier circuits, can support high current and low power consumption operation, and is widely used in high-efficiency power systems such as audio amplifiers and wireless communication equipment.
In summary, SPN9910T252RGB-VB has strong current handling capabilities and low conduction losses. It is suitable for use in high-efficiency power management, DC-DC converters, battery management, and motor drives. It is an ideal power switch component.
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