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SPN8457S223RG-VB Product details
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1. **SPN8457S223RG-VB Product Introduction**
SPN8457S223RG-VB is a unipolar N-channel MOSFET in SOT223 package. It adopts advanced Trench technology, has low on-resistance and high current carrying capacity, and is suitable for a variety of low-voltage and high-efficiency applications. The maximum drain-source voltage (VDS) of this MOSFET is 30V, the maximum gate-source voltage (VGS) is ±20V, and the turn-on voltage threshold (Vth) is 1.7V. Its on-resistance (RDS(ON)) is 21mΩ at VGS = 4.5V and 19mΩ at VGS = 10V, which can effectively reduce power loss and is particularly suitable for high-efficiency power management and motor drive. SPN8457S223RG-VB has a rated current (ID) of 7A, and has good thermal stability and switching performance, and can operate stably at higher operating temperatures.
SPN8457S223RG-VB is a unipolar N-channel MOSFET in SOT223 package. It adopts advanced Trench technology, has low on-resistance and high current carrying capacity, and is suitable for a variety of low-voltage and high-efficiency applications. The maximum drain-source voltage (VDS) of this MOSFET is 30V, the maximum gate-source voltage (VGS) is ±20V, and the turn-on voltage threshold (Vth) is 1.7V. Its on-resistance (RDS(ON)) is 21mΩ at VGS = 4.5V and 19mΩ at VGS = 10V, which can effectively reduce power loss and is particularly suitable for high-efficiency power management and motor drive. SPN8457S223RG-VB has a rated current (ID) of 7A, and has good thermal stability and switching performance, and can operate stably at higher operating temperatures.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 30V | 1.7V | 7A | 19mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 30V | 1.7V | 7A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 30V | 1.7V | 7A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N |
2. **SPN8457S223RG-VB detailed parameter description**
- **Package**: SOT223
- **Configuration**: Unipolar N-channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Turning point voltage threshold (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 21mΩ @ VGS = 4.5V
- 19mΩ @ VGS = 10V
- **Rated current (ID)**: 7A
- **Technology**: Trench
- **Maximum power dissipation (Pd)**: Depends on heat dissipation conditions, generally below 2W
- **Operating temperature range**: -55°C to +150°C
- **Package features**: SOT223 Package, suitable for surface mounting, with good heat dissipation performance, suitable for high current applications.
- **Package**: SOT223
- **Configuration**: Unipolar N-channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Turning point voltage threshold (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 21mΩ @ VGS = 4.5V
- 19mΩ @ VGS = 10V
- **Rated current (ID)**: 7A
- **Technology**: Trench
- **Maximum power dissipation (Pd)**: Depends on heat dissipation conditions, generally below 2W
- **Operating temperature range**: -55°C to +150°C
- **Package features**: SOT223 Package, suitable for surface mounting, with good heat dissipation performance, suitable for high current applications.
Domain and module applications：
3. **SPN8457S223RG-VB Application Fields and Module Examples**
- **Power Management System**:
In the power management system, SPN8457S223RG-VB can be used in high-efficiency power converters. Its low RDS(ON) value and high current capability make it suitable for high-frequency, high-efficiency DC-DC converters, buck converters and other power modules, helping to improve system efficiency and reduce power loss, especially in low-voltage power applications that require higher current.
- **Motor Drive Circuits**:
In motor drive circuits, the high current capability of SPN8457S223RG-VB makes it an ideal choice for driving motors and controlling loads. The low on-resistance and high switching efficiency of MOSFET enable it to effectively control the start, run and stop processes of the motor, reduce losses and improve the overall efficiency of the system.
- **LED Drivers**:
As a switching element in LED driver circuits, SPN8457S223RG-VB can be used to control the current flowing into LED modules. Its low on-resistance (RDS(ON)) can reduce the loss in current control and improve the driving efficiency, which is particularly suitable for use in high-brightness and low-power LED lighting systems.
- **Portable Device Power Supplies**:
In the power supply system of portable devices, SPN8457S223RG-VB MOSFET can be used as a battery-powered switching element. It is suitable for low-voltage, low-current applications such as mobile phones, tablets, wearable devices, etc. It can help manage the battery charging and discharging process and extend battery life.
- **Load Switching**:
SPN8457S223RG-VB can also be used in low-power load switching applications. MOSFET's high switching speed and low on-resistance make it an efficient switching device. It can be used to control the on and off of small power loads and is widely used in sensor modules, automation equipment and industrial control systems.
- **Battery Management System**:
In the battery management system, SPN8457S223RG-VB has low on-resistance and high current capability. It can be used as a switching element in the battery charging and protection circuit to help achieve efficient battery management and ensure the stability and safety of the battery during the charging process.
- **Power Management System**:
In the power management system, SPN8457S223RG-VB can be used in high-efficiency power converters. Its low RDS(ON) value and high current capability make it suitable for high-frequency, high-efficiency DC-DC converters, buck converters and other power modules, helping to improve system efficiency and reduce power loss, especially in low-voltage power applications that require higher current.
- **Motor Drive Circuits**:
In motor drive circuits, the high current capability of SPN8457S223RG-VB makes it an ideal choice for driving motors and controlling loads. The low on-resistance and high switching efficiency of MOSFET enable it to effectively control the start, run and stop processes of the motor, reduce losses and improve the overall efficiency of the system.
- **LED Drivers**:
As a switching element in LED driver circuits, SPN8457S223RG-VB can be used to control the current flowing into LED modules. Its low on-resistance (RDS(ON)) can reduce the loss in current control and improve the driving efficiency, which is particularly suitable for use in high-brightness and low-power LED lighting systems.
- **Portable Device Power Supplies**:
In the power supply system of portable devices, SPN8457S223RG-VB MOSFET can be used as a battery-powered switching element. It is suitable for low-voltage, low-current applications such as mobile phones, tablets, wearable devices, etc. It can help manage the battery charging and discharging process and extend battery life.
- **Load Switching**:
SPN8457S223RG-VB can also be used in low-power load switching applications. MOSFET's high switching speed and low on-resistance make it an efficient switching device. It can be used to control the on and off of small power loads and is widely used in sensor modules, automation equipment and industrial control systems.
- **Battery Management System**:
In the battery management system, SPN8457S223RG-VB has low on-resistance and high current capability. It can be used as a switching element in the battery charging and protection circuit to help achieve efficient battery management and ensure the stability and safety of the battery during the charging process.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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