SPN8439S223RG-VB Product details
Product introduction:
**SPN8439S223RG-VB** is a **single N-channel MOSFET** in **SOT223 package**, suitable for medium and low power switching applications. This MOSFET has a **30V** maximum drain-source voltage (VDS), suitable for low voltage controlled switching power supplies, battery management and load switching applications. Its **RDS(ON)** is **19mΩ** at **VGS=10V** and **21mΩ** at **VGS=4.5V**, which makes it have extremely low on-resistance, which can effectively reduce power loss and improve efficiency. The **threshold voltage (Vth)** of this MOSFET is **1.7V**, which can be turned on with a lower gate voltage and is suitable for low voltage drive. The device adopts **Trench technology**, has good switching performance and low on-resistance, and is suitable for a variety of high-efficiency switching applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 30V | 1.7V | 7A | 19mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 30V | 1.7V | 7A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 30V | 1.7V | 7A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N |
- **Model**: SPN8439S223RG-VB
- **Package**: SOT223 (medium-sized package, suitable for higher power applications)
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 21mΩ @ VGS = 4.5V
- 19mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 7A
- **Technology**: Trench (trench technology, providing low on-resistance and good switching performance)
- **Application areas**: Suitable for applications such as low voltage switching power supplies, load switches, battery management systems, etc.
Domain and module applications:
**SPN8439S223RG-VB** MOSFET is suitable for many fields and modules, especially in situations where high-efficiency switching, low power consumption and small package are required. The following are application examples of this MOSFET:
# a) **Low Voltage Switch Mode Power Supplies**
Because **SPN8439S223RG-VB** has **low RDS(ON)** and **high ID**, it is an ideal switching element in **DC-DC converters** and **low voltage switch mode power supplies**. In these power systems, it can greatly reduce power loss and improve system efficiency, and is particularly suitable for low voltage applications such as **mobile devices**, **laptop power adapters**, and **home appliance power supplies**.
Summary:
**SPN8439S223RG-VB** is a **low voltage, low on-resistance** **N-channel MOSFET**, which is very suitable for **low power switching power supply**, **battery management system**, **load switch** and **portable device** and other fields. Its **Trench technology** provides excellent switching characteristics and low power loss, making it perform well in circuits with high efficiency and low power consumption requirements. Its **SOT223 package** provides high current handling capability while maintaining appropriate miniaturization, suitable for a variety of compact devices.
If you need more detailed application examples or technical support, please feel free to contact us!
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