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SPN7002TS36RGB-VB Product details
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SPN7002TS36RGB-VB MOSFET Product Introduction
**SPN7002TS36RGB-VB** is a dual N-channel MOSFET in SOT23-6 package. This MOSFET has excellent switching performance and uses Trench technology to provide efficient current control at low gate drive voltage. Its maximum drain-source voltage (VDS) is 60V, the maximum gate-source voltage (VGS) is ±20V, and it has a low on-resistance (RDS(ON)), making it very efficient in low-power applications.
This product is ideal for low-power power switching applications that require low conduction losses and stable performance, and its dual MOSFET configuration enables a variety of different switching applications.
**SPN7002TS36RGB-VB** is a dual N-channel MOSFET in SOT23-6 package. This MOSFET has excellent switching performance and uses Trench technology to provide efficient current control at low gate drive voltage. Its maximum drain-source voltage (VDS) is 60V, the maximum gate-source voltage (VGS) is ±20V, and it has a low on-resistance (RDS(ON)), making it very efficient in low-power applications.
This product is ideal for low-power power switching applications that require low conduction losses and stable performance, and its dual MOSFET configuration enables a variety of different switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 60V | 1.7V | 0.35A | 1800mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 60V | 1.7V | 0.35A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 60V | 1.7V | 0.35A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N |
Detailed product parameter description
| **Parameter** | **Description** |
|------------------------|--------------------------------------------------|
| **Package** | SOT23-6 |
| **Configuration** | Dual N-channel MOSFET (N+N) |
| **Maximum VDS** | 60V |
| **Maximum VGS** | ±20V |
| **Threshold voltage (Vth)** | 1.7V |
| **RDS(ON) @ VGS=4.5V** | 3000mΩ |
| **RDS(ON) @ VGS=10V** | 1800mΩ |
| **Maximum ID** | 0.35A |
| **Technology** | Trench technology|
| **Parameter** | **Description** |
|------------------------|--------------------------------------------------|
| **Package** | SOT23-6 |
| **Configuration** | Dual N-channel MOSFET (N+N) |
| **Maximum VDS** | 60V |
| **Maximum VGS** | ±20V |
| **Threshold voltage (Vth)** | 1.7V |
| **RDS(ON) @ VGS=4.5V** | 3000mΩ |
| **RDS(ON) @ VGS=10V** | 1800mΩ |
| **Maximum ID** | 0.35A |
| **Technology** | Trench technology|
Domain and module applications：
Product Applications and Module Examples
1. **Low Power Switch:**
SPN7002TS36RGB-VB MOSFET is well suited for low power applications such as small DC-DC converters and low power power modules. Due to its low threshold voltage and low RDS(ON), switching losses are low at low voltages, which can effectively improve power conversion efficiency. This makes it suitable for applications such as handheld devices and portable devices that have high requirements for efficiency and size.
2. **LED Driver Module:**
In LED driver applications, this MOSFET can provide stable current control to ensure efficient operation of LED lighting systems. Due to its good switching performance and low power loss, it is particularly suitable for small, low-power LED lighting products such as home lamps and decorative lighting.
3. **Wearable Devices:**
The low ID and compact package of SPN7002TS36RGB-VB make it ideal for power management systems in wearable devices. In these applications, MOSFETs can provide stable current control when powered by batteries, help improve the operating efficiency of the equipment, and extend the battery life.
4. **Digital Circuits and Logic Gates: **
This MOSFET can also be used in low-power digital circuits, especially in switch logic gates or signal processing modules. Its low threshold voltage and excellent switching speed enable it to operate at a lower drive voltage and provide reliable signal control.
5. **Smart Battery Management: **
SPN7002TS36RGB-VB MOSFET is also used in smart battery management systems, especially in environments with strict power loss requirements. Its high efficiency and low on-resistance help reduce energy loss and improve battery charging and discharging efficiency.
Overall, SPN7002TS36RGB-VB is particularly suitable for a variety of low-power, low-voltage power management and switching applications with its low RDS(ON) and efficient switching characteristics. It is widely used in consumer electronics, wearable devices, small power modules and lighting systems.
1. **Low Power Switch:**
SPN7002TS36RGB-VB MOSFET is well suited for low power applications such as small DC-DC converters and low power power modules. Due to its low threshold voltage and low RDS(ON), switching losses are low at low voltages, which can effectively improve power conversion efficiency. This makes it suitable for applications such as handheld devices and portable devices that have high requirements for efficiency and size.
2. **LED Driver Module:**
In LED driver applications, this MOSFET can provide stable current control to ensure efficient operation of LED lighting systems. Due to its good switching performance and low power loss, it is particularly suitable for small, low-power LED lighting products such as home lamps and decorative lighting.
3. **Wearable Devices:**
The low ID and compact package of SPN7002TS36RGB-VB make it ideal for power management systems in wearable devices. In these applications, MOSFETs can provide stable current control when powered by batteries, help improve the operating efficiency of the equipment, and extend the battery life.
4. **Digital Circuits and Logic Gates: **
This MOSFET can also be used in low-power digital circuits, especially in switch logic gates or signal processing modules. Its low threshold voltage and excellent switching speed enable it to operate at a lower drive voltage and provide reliable signal control.
5. **Smart Battery Management: **
SPN7002TS36RGB-VB MOSFET is also used in smart battery management systems, especially in environments with strict power loss requirements. Its high efficiency and low on-resistance help reduce energy loss and improve battery charging and discharging efficiency.
Overall, SPN7002TS36RGB-VB is particularly suitable for a variety of low-power, low-voltage power management and switching applications with its low RDS(ON) and efficient switching characteristics. It is widely used in consumer electronics, wearable devices, small power modules and lighting systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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