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SPN6562S26RGB-VB Product details
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SPN6562S26RGB-VB Product Introduction:
SPN6562S26RGB-VB is a dual-channel N-Channel MOSFET in SOT23-6 package, designed for low-voltage and high-efficiency applications. This product has an extremely low on-resistance (RDS(ON)), which enables it to maintain low power consumption even when the current load is large. The maximum drain-source voltage (VDS) of SPN6562S26RGB-VB is 20V, which is suitable for low-voltage power management and other small and high-efficiency electronic modules. Its threshold voltage (Vth) ranges from 0.5V to 1.5V, allowing it to be turned on at low voltage, suitable for application scenarios with high switching speed and energy efficiency requirements.
The RDS(ON) of this product is 28mΩ at VGS=2.5V and 22mΩ at VGS=4.5V, which can effectively reduce power loss and improve the thermal management performance of the overall system. The maximum drain current (ID) is 6A, which can meet the needs of most medium-power applications. This MOSFET uses advanced Trench technology to ensure that it remains stable under high-frequency and high-speed switching conditions.
SPN6562S26RGB-VB is a dual-channel N-Channel MOSFET in SOT23-6 package, designed for low-voltage and high-efficiency applications. This product has an extremely low on-resistance (RDS(ON)), which enables it to maintain low power consumption even when the current load is large. The maximum drain-source voltage (VDS) of SPN6562S26RGB-VB is 20V, which is suitable for low-voltage power management and other small and high-efficiency electronic modules. Its threshold voltage (Vth) ranges from 0.5V to 1.5V, allowing it to be turned on at low voltage, suitable for application scenarios with high switching speed and energy efficiency requirements.
The RDS(ON) of this product is 28mΩ at VGS=2.5V and 22mΩ at VGS=4.5V, which can effectively reduce power loss and improve the thermal management performance of the overall system. The maximum drain current (ID) is 6A, which can meet the needs of most medium-power applications. This MOSFET uses advanced Trench technology to ensure that it remains stable under high-frequency and high-speed switching conditions.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 20V | 0.5~1.5V | 6A | 28mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 20V | 0.5~1.5V | 6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 20V | 0.5~1.5V | 6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N |
SPN6562S26RGB-VB Detailed parameter description:
- **Package type**: SOT23-6
- **Configuration**: Dual N-Channel
- **Maximum drain-source voltage (VDS)**: 20V
- **Maximum gate-source voltage (VGS)**: ±12V
- **Threshold voltage (Vth)**: 0.5V ~ 1.5V
- **On-resistance (RDS(ON))**:
- RDS(ON) @ VGS = 2.5V: 28mΩ
- RDS(ON) @ VGS = 4.5V: 22mΩ
- **Maximum drain current (ID)**: 6A
- **Technology**: Trench
- **Operating temperature range**: -40°C ~ 125°C
- **Package size**: SOT23-6, suitable for space-constrained applications
- **Package type**: SOT23-6
- **Configuration**: Dual N-Channel
- **Maximum drain-source voltage (VDS)**: 20V
- **Maximum gate-source voltage (VGS)**: ±12V
- **Threshold voltage (Vth)**: 0.5V ~ 1.5V
- **On-resistance (RDS(ON))**:
- RDS(ON) @ VGS = 2.5V: 28mΩ
- RDS(ON) @ VGS = 4.5V: 22mΩ
- **Maximum drain current (ID)**: 6A
- **Technology**: Trench
- **Operating temperature range**: -40°C ~ 125°C
- **Package size**: SOT23-6, suitable for space-constrained applications
Domain and module applications：
SPN6562S26RGB-VB application areas and modules:
1. **Battery-powered devices and low-voltage power management**
The low threshold voltage (Vth) of SPN6562S26RGB-VB enables it to start at low voltage, making it very suitable for battery-powered devices such as portable electronic products, smart wearable devices and battery management systems. Due to its low RDS(ON), it can effectively reduce power loss during battery operation and extend the service life of the device.
2. **High-efficiency DC-DC converter**
In DC-DC converters, the low RDS(ON) characteristics of MOSFET are crucial. SPN6562S26RGB-VB provides an on-resistance of only 22mΩ at different operating voltages, especially at VGS=4.5V, which makes it have excellent efficiency in high-frequency switching conversions, and is particularly suitable for low-voltage, high-efficiency power conversion applications.
3. **Load switch and overvoltage protection module**
Due to its extremely low on-resistance, SPN6562S26RGB-VB can maintain low heat dissipation when the current load is large, and is suitable for modules such as load switch and current overload protection. Its high-efficiency switching performance also makes it perform well under dynamic load conditions.
4. **LED driver and lighting applications**
The low RDS(ON) and high conductivity of SPN6562S26RGB-VB make it an ideal choice in LED driver circuits, which can reduce energy loss in the driver circuit and maintain stable brightness of LED modules.
5. **Sensor module and smart home system**
In smart home devices, such as smart sensors, wireless communication modules, etc., SPN6562S26RGB-VB provides fast response time and low power consumption characteristics to ensure efficient operation of the equipment, especially for application scenarios that require high-frequency switching and are sensitive to power consumption.
6. **Automotive Electronic Systems**
SPN6562S26RGB-VB is also suitable for automotive electronic equipment, especially in vehicle power management systems, vehicle communication modules and other low-voltage, high-efficiency vehicle equipment, and can provide stable switching performance and low heat loss.
1. **Battery-powered devices and low-voltage power management**
The low threshold voltage (Vth) of SPN6562S26RGB-VB enables it to start at low voltage, making it very suitable for battery-powered devices such as portable electronic products, smart wearable devices and battery management systems. Due to its low RDS(ON), it can effectively reduce power loss during battery operation and extend the service life of the device.
2. **High-efficiency DC-DC converter**
In DC-DC converters, the low RDS(ON) characteristics of MOSFET are crucial. SPN6562S26RGB-VB provides an on-resistance of only 22mΩ at different operating voltages, especially at VGS=4.5V, which makes it have excellent efficiency in high-frequency switching conversions, and is particularly suitable for low-voltage, high-efficiency power conversion applications.
3. **Load switch and overvoltage protection module**
Due to its extremely low on-resistance, SPN6562S26RGB-VB can maintain low heat dissipation when the current load is large, and is suitable for modules such as load switch and current overload protection. Its high-efficiency switching performance also makes it perform well under dynamic load conditions.
4. **LED driver and lighting applications**
The low RDS(ON) and high conductivity of SPN6562S26RGB-VB make it an ideal choice in LED driver circuits, which can reduce energy loss in the driver circuit and maintain stable brightness of LED modules.
5. **Sensor module and smart home system**
In smart home devices, such as smart sensors, wireless communication modules, etc., SPN6562S26RGB-VB provides fast response time and low power consumption characteristics to ensure efficient operation of the equipment, especially for application scenarios that require high-frequency switching and are sensitive to power consumption.
6. **Automotive Electronic Systems**
SPN6562S26RGB-VB is also suitable for automotive electronic equipment, especially in vehicle power management systems, vehicle communication modules and other low-voltage, high-efficiency vehicle equipment, and can provide stable switching performance and low heat loss.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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