中文
English
SPN6561S26RGB-VB Product details
Back to previous pageProduct introduction：
**:
SPN6561S26RGB-VB is a dual N-type MOSFET in SOT23-6 package, designed for applications in the 20V voltage range. The product has a threshold voltage (Vth) of 0.5V to 1.5V, low RDS(ON) performance, and a maximum current carrying capacity of 6A, making it suitable for power switching and power management of high-performance electronic devices.
2. **
SPN6561S26RGB-VB is a dual N-type MOSFET in SOT23-6 package, designed for applications in the 20V voltage range. The product has a threshold voltage (Vth) of 0.5V to 1.5V, low RDS(ON) performance, and a maximum current carrying capacity of 6A, making it suitable for power switching and power management of high-performance electronic devices.
2. **
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 20V | 0.5~1.5V | 6A | 28mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 20V | 0.5~1.5V | 6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 20V | 0.5~1.5V | 6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N |
**：
- **Package**: SOT23-6
- **Configuration**: Dual N+N type
- **VDS**: 20V
- **VGS**: ±12V
- **Vth**: 0.5~1.5V
- **RDS(ON)**: 28mΩ@VGS=2.5V; 22mΩ@VGS=4.5V
- **ID**: 6A
- **Technology**: Trench
3. **
- **Package**: SOT23-6
- **Configuration**: Dual N+N type
- **VDS**: 20V
- **VGS**: ±12V
- **Vth**: 0.5~1.5V
- **RDS(ON)**: 28mΩ@VGS=2.5V; 22mΩ@VGS=4.5V
- **ID**: 6A
- **Technology**: Trench
3. **
Domain and module applications：
**:
This MOSFET is suitable for low-voltage, high-frequency power converters, LED drivers and battery management systems, especially for scenarios requiring low RDS(ON), such as smart power supplies, power switches in consumer electronic devices, and low-power circuit design. It can also be used in modules such as current regulation and signal amplification in automotive electronics and communication equipment.
This MOSFET is suitable for low-voltage, high-frequency power converters, LED drivers and battery management systems, especially for scenarios requiring low RDS(ON), such as smart power supplies, power switches in consumer electronic devices, and low-power circuit design. It can also be used in modules such as current regulation and signal amplification in automotive electronics and communication equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
