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SPN30T10-VB Product details
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Product Introduction
**SPN30T10-VB** is an N-Channel MOSFET with excellent performance, packaged in TO252, designed for high-efficiency power applications. This MOSFET uses advanced Trench technology, has extremely low on-resistance and high current carrying capacity, and can provide excellent switching performance and thermal management capabilities. Its maximum drain-source voltage (V_DS) is 100V, and the maximum drain current (I_D) can reach 40A, which is suitable for various electronic systems requiring high power and high efficiency. The low on-resistance of this MOSFET (R_DS(ON) = 30mΩ @ V_GS=10V) ensures extremely low power loss under high current conditions, which is very suitable for use in power conversion, automotive power electronics, industrial control systems and other fields.
**SPN30T10-VB** is an N-Channel MOSFET with excellent performance, packaged in TO252, designed for high-efficiency power applications. This MOSFET uses advanced Trench technology, has extremely low on-resistance and high current carrying capacity, and can provide excellent switching performance and thermal management capabilities. Its maximum drain-source voltage (V_DS) is 100V, and the maximum drain current (I_D) can reach 40A, which is suitable for various electronic systems requiring high power and high efficiency. The low on-resistance of this MOSFET (R_DS(ON) = 30mΩ @ V_GS=10V) ensures extremely low power loss under high current conditions, which is very suitable for use in power conversion, automotive power electronics, industrial control systems and other fields.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 40A | 30mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 40A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 40A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Model**: SPN30T10-VB
- **Package type**: TO252
- **Configuration**: Unipolar N-Channel MOSFET
- **Drain-source voltage (V_DS)**: 100V
- **Gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: 1.8V
- **On-resistance (R_DS(ON))**:
- 35mΩ @ V_GS=4.5V
- 30mΩ @ V_GS=10V
- **Maximum drain current (I_D)**: 40A
- **Technology**: Trench technology
- **Maximum power dissipation (P_D)**: 75W (typical)
- **Junction temperature range**: -55°C to 150°C
- **Switching Performance**: Efficient switching characteristics for fast switching applications
- **Application Current Density**: Optimized design for high current applications
- **Model**: SPN30T10-VB
- **Package type**: TO252
- **Configuration**: Unipolar N-Channel MOSFET
- **Drain-source voltage (V_DS)**: 100V
- **Gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: 1.8V
- **On-resistance (R_DS(ON))**:
- 35mΩ @ V_GS=4.5V
- 30mΩ @ V_GS=10V
- **Maximum drain current (I_D)**: 40A
- **Technology**: Trench technology
- **Maximum power dissipation (P_D)**: 75W (typical)
- **Junction temperature range**: -55°C to 150°C
- **Switching Performance**: Efficient switching characteristics for fast switching applications
- **Application Current Density**: Optimized design for high current applications
Domain and module applications：
Application fields and module examples
1. **Power converters and DC-DC converters**
In power management systems, SPN30T10-VB can be used in applications such as DC-DC converters. Its low on-resistance and high current carrying capacity enable it to perform well under high load conditions, effectively reducing power loss and ensuring high efficiency of the converter. It is suitable for fields such as voltage regulation modules and switching power supplies.
2. **Electric vehicles and battery management systems**
In the battery management system (BMS) of electric vehicles, this MOSFET can be used as an efficient switching element for battery charge and discharge management. Its high on-capacity and low power loss characteristics effectively improve the battery charge and discharge efficiency and extend the battery life.
3. **Power electronics and motor drive modules**
In industrial automation, robot control systems, and motor drive modules, SPN30T10-VB is used as a high-power switching element to efficiently control the current of the motor drive, improve control accuracy and system efficiency. Its high current carrying capacity and fast switching characteristics excel in these systems, providing efficient and stable power management.
4. **Automotive power electronics systems**
SPN30T10-VB is widely used in automotive power electronics systems, especially in electric power steering, braking systems and other fields. It can withstand high currents, provide efficient power conversion and control, and optimize system performance and energy efficiency.
5. **Solar inverters and power modules**
In the inverter of the solar power generation system, this MOSFET can be used for efficient power conversion. Its low on-resistance and high current carrying capacity enable it to provide excellent performance in solar inverters, which can reduce energy losses and improve the overall efficiency of the system.
Through its excellent current carrying capacity, low on-resistance and fast switching characteristics, **SPN30T10-VB** excels in multiple high-power and high-efficiency applications and is an ideal power electronic switching element, especially for systems requiring low losses, high efficiency and high reliability.
1. **Power converters and DC-DC converters**
In power management systems, SPN30T10-VB can be used in applications such as DC-DC converters. Its low on-resistance and high current carrying capacity enable it to perform well under high load conditions, effectively reducing power loss and ensuring high efficiency of the converter. It is suitable for fields such as voltage regulation modules and switching power supplies.
2. **Electric vehicles and battery management systems**
In the battery management system (BMS) of electric vehicles, this MOSFET can be used as an efficient switching element for battery charge and discharge management. Its high on-capacity and low power loss characteristics effectively improve the battery charge and discharge efficiency and extend the battery life.
3. **Power electronics and motor drive modules**
In industrial automation, robot control systems, and motor drive modules, SPN30T10-VB is used as a high-power switching element to efficiently control the current of the motor drive, improve control accuracy and system efficiency. Its high current carrying capacity and fast switching characteristics excel in these systems, providing efficient and stable power management.
4. **Automotive power electronics systems**
SPN30T10-VB is widely used in automotive power electronics systems, especially in electric power steering, braking systems and other fields. It can withstand high currents, provide efficient power conversion and control, and optimize system performance and energy efficiency.
5. **Solar inverters and power modules**
In the inverter of the solar power generation system, this MOSFET can be used for efficient power conversion. Its low on-resistance and high current carrying capacity enable it to provide excellent performance in solar inverters, which can reduce energy losses and improve the overall efficiency of the system.
Through its excellent current carrying capacity, low on-resistance and fast switching characteristics, **SPN30T10-VB** excels in multiple high-power and high-efficiency applications and is an ideal power electronic switching element, especially for systems requiring low losses, high efficiency and high reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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