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SPN12T20T252RGB-VB Product details
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Product Introduction
**SPN12T20T252RGB-VB** is an N-Channel MOSFET with excellent performance, packaged in TO252, suitable for various high-power electronic applications. It adopts the latest Trench technology, has good switching characteristics and low on-resistance, and is widely used in high-efficiency power conversion, DC-DC converters, electric vehicles and power electronic equipment. Its rated drain-source voltage (V_DS) is 200V, which can withstand higher voltage loads, while its low on-resistance (R_DS(ON)=55mΩ@V_GS=10V) exhibits extremely low power loss under high current operating conditions, greatly improving system efficiency. The product also has excellent thermal performance and high current carrying capacity, with a maximum ID of 30A, making it an ideal choice for applications requiring high performance, low loss and high reliability.
**SPN12T20T252RGB-VB** is an N-Channel MOSFET with excellent performance, packaged in TO252, suitable for various high-power electronic applications. It adopts the latest Trench technology, has good switching characteristics and low on-resistance, and is widely used in high-efficiency power conversion, DC-DC converters, electric vehicles and power electronic equipment. Its rated drain-source voltage (V_DS) is 200V, which can withstand higher voltage loads, while its low on-resistance (R_DS(ON)=55mΩ@V_GS=10V) exhibits extremely low power loss under high current operating conditions, greatly improving system efficiency. The product also has excellent thermal performance and high current carrying capacity, with a maximum ID of 30A, making it an ideal choice for applications requiring high performance, low loss and high reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 30A | 55mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 30A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 30A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Model**: SPN12T20T252RGB-VB
- **Package type**: TO252
- **Configuration**: Unipolar N-Channel MOSFET
- **Drain-source voltage (V_DS)**: 200V
- **Gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: 3V
- **On-resistance (R_DS(ON))**: 55mΩ @ V_GS=10V
- **Maximum drain current (I_D)**: 30A
- **Technology**: Trench technology
- **Maximum power dissipation (P_D)**: 65W (typical)
- **Junction temperature**: -55°C to 150°C
- **Application current density**: Optimized for high current applications
- **Current amplification characteristics**: High efficiency switching performance, suitable for fast switching applications
- **Model**: SPN12T20T252RGB-VB
- **Package type**: TO252
- **Configuration**: Unipolar N-Channel MOSFET
- **Drain-source voltage (V_DS)**: 200V
- **Gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: 3V
- **On-resistance (R_DS(ON))**: 55mΩ @ V_GS=10V
- **Maximum drain current (I_D)**: 30A
- **Technology**: Trench technology
- **Maximum power dissipation (P_D)**: 65W (typical)
- **Junction temperature**: -55°C to 150°C
- **Application current density**: Optimized for high current applications
- **Current amplification characteristics**: High efficiency switching performance, suitable for fast switching applications
Domain and module applications：
Applications and module examples
1. **Power management system**
In the field of power conversion, SPN12T20T252RGB-VB can be used as a switching device in DC-DC converters. Its low on-resistance and high current carrying capacity enable it to effectively reduce power loss and improve system efficiency in applications with high power requirements, and is particularly suitable for high-power power management systems.
2. **Electric vehicle (EV) battery management system**
In the field of electric vehicles, this MOSFET can be used in battery management and drive systems to improve charging and discharging efficiency by controlling the flow of current to the battery pack. Its high current carrying capacity and low on-resistance enable electric vehicles to manage energy flow more effectively and extend battery life.
3. **Industrial automation and robotic control**
In industrial automation and robotic control systems, SPN12T20T252RGB-VB can be used as a switching element in motor drive modules. Its efficient switching performance and thermal stability enable it to withstand high currents and frequent switching operations, providing precise control and reliability.
4. **High-efficiency power converters and inverters**
In solar inverters and high-efficiency power modules, this MOSFET can operate stably under high voltage and high current conditions. It not only provides high efficiency in the DC to AC conversion process, but also reduces the loss caused by high current switching, ensuring the stability and efficiency of the system.
5. **Automotive power electronics system**
In the power electronics system of the car (such as electric power steering, braking system, etc.), SPN12T20T252RGB-VB is used as a switching device. It can withstand high voltage and current to ensure the efficient and stable operation of the system, while also optimizing the energy efficiency ratio of the entire system.
Through its excellent switching performance and high current carrying capacity, SPN12T20T252RGB-VB performs well in multiple high-power and high-efficiency applications and is an ideal power electronics component.
1. **Power management system**
In the field of power conversion, SPN12T20T252RGB-VB can be used as a switching device in DC-DC converters. Its low on-resistance and high current carrying capacity enable it to effectively reduce power loss and improve system efficiency in applications with high power requirements, and is particularly suitable for high-power power management systems.
2. **Electric vehicle (EV) battery management system**
In the field of electric vehicles, this MOSFET can be used in battery management and drive systems to improve charging and discharging efficiency by controlling the flow of current to the battery pack. Its high current carrying capacity and low on-resistance enable electric vehicles to manage energy flow more effectively and extend battery life.
3. **Industrial automation and robotic control**
In industrial automation and robotic control systems, SPN12T20T252RGB-VB can be used as a switching element in motor drive modules. Its efficient switching performance and thermal stability enable it to withstand high currents and frequent switching operations, providing precise control and reliability.
4. **High-efficiency power converters and inverters**
In solar inverters and high-efficiency power modules, this MOSFET can operate stably under high voltage and high current conditions. It not only provides high efficiency in the DC to AC conversion process, but also reduces the loss caused by high current switching, ensuring the stability and efficiency of the system.
5. **Automotive power electronics system**
In the power electronics system of the car (such as electric power steering, braking system, etc.), SPN12T20T252RGB-VB is used as a switching device. It can withstand high voltage and current to ensure the efficient and stable operation of the system, while also optimizing the energy efficiency ratio of the entire system.
Through its excellent switching performance and high current carrying capacity, SPN12T20T252RGB-VB performs well in multiple high-power and high-efficiency applications and is an ideal power electronics component.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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