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SPN11T10T252RGB-VB Product details
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1. **Product Introduction: **
**SPN11T10T252RGB-VB** is a high-performance single N-Channel MOSFET in TO252 package, designed for medium and high voltage applications. Its maximum drain-source voltage (VDS) is 100V, suitable for medium voltage range applications such as power management, power switching and motor drive. The maximum gate-source voltage (VGS) of this MOSFET is ±20V, ensuring that it can operate stably over a wide range of control voltages. The threshold voltage (Vth) is 1.8V, ensuring that it can effectively conduct at low gate voltages. The on-resistance (RDS(ON)) of SPN11T10T252RGB-VB is 114mΩ at VGS=10V, with low conduction losses and capable of carrying a maximum drain current of 15A. Using Trench technology, this MOSFET provides good switching performance, low on-resistance and efficient thermal management capabilities, making it an ideal choice for high-efficiency power supplies and switching circuits.
**SPN11T10T252RGB-VB** is a high-performance single N-Channel MOSFET in TO252 package, designed for medium and high voltage applications. Its maximum drain-source voltage (VDS) is 100V, suitable for medium voltage range applications such as power management, power switching and motor drive. The maximum gate-source voltage (VGS) of this MOSFET is ±20V, ensuring that it can operate stably over a wide range of control voltages. The threshold voltage (Vth) is 1.8V, ensuring that it can effectively conduct at low gate voltages. The on-resistance (RDS(ON)) of SPN11T10T252RGB-VB is 114mΩ at VGS=10V, with low conduction losses and capable of carrying a maximum drain current of 15A. Using Trench technology, this MOSFET provides good switching performance, low on-resistance and efficient thermal management capabilities, making it an ideal choice for high-efficiency power supplies and switching circuits.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | 114mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. **Detailed parameter description:**
- **Package type**: TO252
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- When VGS=10V, RDS(ON) is 114mΩ
- **Maximum drain current (ID)**: 15A
- **Technology**: Trench
- **Typical application areas**: power management, motor drive, power module, battery charger, DC-DC converter
- **Package type**: TO252
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- When VGS=10V, RDS(ON) is 114mΩ
- **Maximum drain current (ID)**: 15A
- **Technology**: Trench
- **Typical application areas**: power management, motor drive, power module, battery charger, DC-DC converter
Domain and module applications：
3. **Application Examples:**
- **Power Management System**: SPN11T10T252RGB-VB is widely used in power management systems, especially in DC-DC converters that require higher current handling. Due to its maximum drain-source voltage of 100V and low on-resistance, this MOSFET can be efficiently used as a switching element, reducing power loss and improving overall power conversion efficiency. It is widely used in communication equipment, power electronic equipment, and high-efficiency power modules.
- **Battery Charger**: In battery charging systems, SPN11T10T252RGB-VB is an ideal choice, especially for medium voltage and high current battery charger designs. Its maximum drain current carrying capacity of 15A and low RDS(ON) characteristics enable it to efficiently control charging current, reduce losses, and improve charging efficiency. It is suitable for various battery charging applications such as lithium batteries and lead-acid batteries.
- **Motor Drive**: SPN11T10T252RGB-VB can be widely used in motor control circuits, especially in power tools, electric transportation tools, electric mechanical equipment, etc. in the medium voltage range. Due to its high current handling capability and low on-resistance, it can effectively control the motor drive current, ensuring high efficiency and precise motor control while reducing heat loss in the system.
- **Power Module**: In the design of high-efficiency power modules, the low on-resistance and high current carrying capacity of SPN11T10T252RGB-VB make it an ideal switching element for power management in various industrial and consumer products. It can carry large current loads and provide reliable power output at low power loss, suitable for various power modules and power conversion circuits.
- **DC-DC Converter**: In DC-DC converter applications, SPN11T10T252RGB-VB can play an important role as a switching element in efficient voltage conversion. Its low RDS(ON) and high current carrying capacity enable it to reduce heat generation and improve conversion efficiency during high-efficiency conversion, and is widely used in occasions requiring high-efficiency conversion, such as communication equipment, electric vehicles, and power electronic equipment.
In summary, SPN11T10T252RGB-VB is an N-Channel MOSFET suitable for medium voltage and high current applications, and is widely used in power management, motor drive, battery charging, power modules, DC-DC converters, etc. Its low on-resistance, high current carrying capacity, and Trench technology enable it to perform well in various high-efficiency power management and switching circuits.
- **Power Management System**: SPN11T10T252RGB-VB is widely used in power management systems, especially in DC-DC converters that require higher current handling. Due to its maximum drain-source voltage of 100V and low on-resistance, this MOSFET can be efficiently used as a switching element, reducing power loss and improving overall power conversion efficiency. It is widely used in communication equipment, power electronic equipment, and high-efficiency power modules.
- **Battery Charger**: In battery charging systems, SPN11T10T252RGB-VB is an ideal choice, especially for medium voltage and high current battery charger designs. Its maximum drain current carrying capacity of 15A and low RDS(ON) characteristics enable it to efficiently control charging current, reduce losses, and improve charging efficiency. It is suitable for various battery charging applications such as lithium batteries and lead-acid batteries.
- **Motor Drive**: SPN11T10T252RGB-VB can be widely used in motor control circuits, especially in power tools, electric transportation tools, electric mechanical equipment, etc. in the medium voltage range. Due to its high current handling capability and low on-resistance, it can effectively control the motor drive current, ensuring high efficiency and precise motor control while reducing heat loss in the system.
- **Power Module**: In the design of high-efficiency power modules, the low on-resistance and high current carrying capacity of SPN11T10T252RGB-VB make it an ideal switching element for power management in various industrial and consumer products. It can carry large current loads and provide reliable power output at low power loss, suitable for various power modules and power conversion circuits.
- **DC-DC Converter**: In DC-DC converter applications, SPN11T10T252RGB-VB can play an important role as a switching element in efficient voltage conversion. Its low RDS(ON) and high current carrying capacity enable it to reduce heat generation and improve conversion efficiency during high-efficiency conversion, and is widely used in occasions requiring high-efficiency conversion, such as communication equipment, electric vehicles, and power electronic equipment.
In summary, SPN11T10T252RGB-VB is an N-Channel MOSFET suitable for medium voltage and high current applications, and is widely used in power management, motor drive, battery charging, power modules, DC-DC converters, etc. Its low on-resistance, high current carrying capacity, and Trench technology enable it to perform well in various high-efficiency power management and switching circuits.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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