Product introduction：
SPN1012S52RGB-VB Product Introduction
SPN1012S52RGB-VB is a single-channel N-Channel MOSFET in SC75-3 package with low on-resistance (RDS(ON)), making it very suitable for low-voltage, high-efficiency power management and low-power switching applications. The maximum drain-source voltage (VDS) of this MOSFET is 20V, the maximum gate-source voltage (VGS) is ±12V, and the threshold voltage (Vth) is between 0.5V and 1.5V. Its RDS(ON) is 270mΩ @ VGS=4.5V, which is suitable for medium-load circuits and lower-power applications. Its maximum drain current (ID) is 0.85A, and it has Trench technology, providing efficient switching performance, suitable for power conversion and switching applications that require small size, low voltage and high efficiency.
SPN1012S52RGB-VB MOSFET provides excellent switching performance and low power consumption solutions in low power systems, especially in mobile devices, consumer electronics and low voltage battery powered systems.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SC75-3 |
Single-N |
20V |
|
0.5~1.5V |
0.85A |
390mΩ |
|
|
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SC75-3 |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| SC75-3 |
Single-N |
20V |
|
0.5~1.5V |
0.85A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| SC75-3 |
Single-N |
20V |
|
0.5~1.5V |
0.85A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SC75-3 |
Single-N |
|
|
|
|
|
|
|
SPN1012S52RGB-VB Detailed parameter description
- **Package**: SC75-3
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 20V
- **Maximum gate-source voltage (VGS)**: ±12V
- **Threshold voltage (Vth)**: 0.5V ~ 1.5V
- **On-resistance (RDS(ON))**:
- 390mΩ @ VGS=2.5V
- 270mΩ @ VGS=4.5V
- **Maximum drain current (ID)**: 0.85A
- **Technology type**: Trench
Domain and module applications：
Applications and Modules
SPN1012S52RGB-VB MOSFET is suitable for various low-power power management and high-efficiency switching applications due to its low on-resistance and small package size. The following are the main application areas of this MOSFET:
1. **Low Power Power Management System**:
Suitable for power management modules in portable devices, battery-powered circuits, and other low-power electronic products. Due to its low threshold voltage and low on-resistance, SPN1012S52RGB-VB MOSFET can effectively improve power conversion efficiency, especially in portable devices such as smartphones and wearable devices.
2. **Consumer Electronics**:
This MOSFET is very suitable for low-power consumer electronics such as TVs, audio equipment, home appliance control systems, etc. Due to its small package size and high efficiency, it can help these devices reduce power consumption and provide stable power conversion performance.
3. **Battery-Powered Systems**:
SPN1012S52RGB-VB MOSFET can be widely used in power management modules of mobile devices, power tools and other battery-powered systems, providing efficient battery energy conversion, extending device usage time and ensuring stable battery operation.
4. **LED Drivers**:
This MOSFET can be used in low-power LED drivers, especially in systems that require high performance and small packages. It is suitable for LED control circuits in home, automotive and outdoor lighting fields.
5. **Toys and Small Electric Devices**:
SPN1012S52RGB-VB can be used in electric toys, small electric tools and equipment to provide power management and efficient switching operations to ensure stable and efficient operation of the equipment.
6. **Computers & Embedded Systems**:
In computer peripherals or embedded systems, SPN1012S52RGB-VB can be used for power regulation, switching and protection functions to help improve system stability and power efficiency.
7. **USB-Powered Devices**:
In USB-powered devices, this MOSFET is suitable for current management, power control and other modules due to its low threshold voltage and efficient switching characteristics, which can improve the energy efficiency and stability of USB devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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