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SPD30N03S2L-07 G-VB Product details
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SPD30N03S2L-07 G-VB MOSFET Product Introduction
The SPD30N03S2L-07 G-VB is a unipolar N-channel MOSFET in a TO252 package. It has a maximum drain-source voltage (V_DS) of 30V, making it suitable for low-voltage control circuits. Its gate-source voltage (V_GS) is ±20V, and it has excellent on-state performance, especially at low R_DS(on). The R_DS(on) of this device is 9mΩ at V_GS = 4.5V and 7mΩ at V_GS = 10V, which means it has extremely low on-resistance at low current loss and can withstand a maximum drain current (I_D) of 70A. Manufactured using Trench technology, it has low switching losses, high efficiency and good thermal management performance.
The SPD30N03S2L-07 G-VB is a unipolar N-channel MOSFET in a TO252 package. It has a maximum drain-source voltage (V_DS) of 30V, making it suitable for low-voltage control circuits. Its gate-source voltage (V_GS) is ±20V, and it has excellent on-state performance, especially at low R_DS(on). The R_DS(on) of this device is 9mΩ at V_GS = 4.5V and 7mΩ at V_GS = 10V, which means it has extremely low on-resistance at low current loss and can withstand a maximum drain current (I_D) of 70A. Manufactured using Trench technology, it has low switching losses, high efficiency and good thermal management performance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | 7mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
SPD30N03S2L-07 G-VB MOSFET Detailed parameter description
- **Package**: TO252
- **Configuration**: Single N channel
- **Drain-source voltage (V_DS)**: 30V
- **Gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: 1.7V
- **On-resistance (R_DS(on))**:
- 9mΩ @ V_GS = 4.5V
- 7mΩ @ V_GS = 10V
- **Drain current (I_D)**: 70A
- **Technology**: Trench technology
- **Package**: TO252
- **Configuration**: Single N channel
- **Drain-source voltage (V_DS)**: 30V
- **Gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: 1.7V
- **On-resistance (R_DS(on))**:
- 9mΩ @ V_GS = 4.5V
- 7mΩ @ V_GS = 10V
- **Drain current (I_D)**: 70A
- **Technology**: Trench technology
Domain and module applications：
Examples of applicable fields and modules
1. **Power Management and Voltage Converters**
The SPD30N03S2L-07 G-VB MOSFET can be used in power management circuits, such as DC-DC converters, to effectively improve efficiency. Low R_DS(on) results in lower switching losses, making it ideal for high-efficiency power conversion applications, especially in high-load environments that require frequent switching.
2. **Battery Management System (BMS)**
Due to the low on-resistance of this MOSFET, the SPD30N03S2L-07 G-VB is very suitable for battery management systems, especially in high-current charge and discharge paths, where it can achieve efficient current control and ensure battery stability and efficiency during the charge and discharge process.
3. **Power Tools and Small Motor Drives**
Suitable for use in power tools and motor drive modules. The low on-resistance characteristic enables it to provide extremely low resistance losses during current peaks, thereby improving the performance of the overall system, especially in situations where high current transmission is required, such as motor control, which can effectively reduce heat loss.
4. **Consumer Electronics**
This MOSFET is suitable for power management modules in various consumer electronics products, such as smartphones, battery chargers and portable electronic devices. Its low R_DS(on) can reduce power consumption, thereby extending battery life and meeting consumers' demand for high performance and long battery life.
5. **Automotive Electronics Applications**
SPD30N03S2L-07 G-VB MOSFET is also widely used in automotive electronic systems, especially in power management modules, electric drive systems and other modules that require efficient current control. Its high current carrying capacity and low loss characteristics enable it to work in automotive environments and provide reliable performance.
In summary, SPD30N03S2L-07 G-VB MOSFET is widely used in electronic devices that require high performance and low loss, including power conversion, battery management, drive circuits and various consumer electronics and automotive electronic systems due to its low on-resistance, excellent current carrying capacity and adaptability to different operating voltages.
1. **Power Management and Voltage Converters**
The SPD30N03S2L-07 G-VB MOSFET can be used in power management circuits, such as DC-DC converters, to effectively improve efficiency. Low R_DS(on) results in lower switching losses, making it ideal for high-efficiency power conversion applications, especially in high-load environments that require frequent switching.
2. **Battery Management System (BMS)**
Due to the low on-resistance of this MOSFET, the SPD30N03S2L-07 G-VB is very suitable for battery management systems, especially in high-current charge and discharge paths, where it can achieve efficient current control and ensure battery stability and efficiency during the charge and discharge process.
3. **Power Tools and Small Motor Drives**
Suitable for use in power tools and motor drive modules. The low on-resistance characteristic enables it to provide extremely low resistance losses during current peaks, thereby improving the performance of the overall system, especially in situations where high current transmission is required, such as motor control, which can effectively reduce heat loss.
4. **Consumer Electronics**
This MOSFET is suitable for power management modules in various consumer electronics products, such as smartphones, battery chargers and portable electronic devices. Its low R_DS(on) can reduce power consumption, thereby extending battery life and meeting consumers' demand for high performance and long battery life.
5. **Automotive Electronics Applications**
SPD30N03S2L-07 G-VB MOSFET is also widely used in automotive electronic systems, especially in power management modules, electric drive systems and other modules that require efficient current control. Its high current carrying capacity and low loss characteristics enable it to work in automotive environments and provide reliable performance.
In summary, SPD30N03S2L-07 G-VB MOSFET is widely used in electronic devices that require high performance and low loss, including power conversion, battery management, drive circuits and various consumer electronics and automotive electronic systems due to its low on-resistance, excellent current carrying capacity and adaptability to different operating voltages.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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