SPD10N10-VB Product details
Product introduction:
**SPD10N10-VB** is an N-Channel MOSFET in TO252 package with a drain-source voltage (V_DS) of 100V and a maximum current carrying capacity of 15A, suitable for a variety of high-power switching applications. This MOSFET uses innovative Trench technology and has a low R_DS(ON) value (114mΩ at V_GS = 10V), enabling it to provide excellent performance in high-efficiency and high-frequency applications. This product has a V_th (turn-on voltage) of 1.8V, which is suitable for medium and low voltage drive requirements and can be widely used in power management, DC-DC conversion, motor drive and other fields.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | 114mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
| Parameter| Description|
|---------------------|---------------------------------------------------|
| **Package type** | TO252 (can be used as a standard package for medium power MOSFET) |
| **Configuration** | Single-N-Channel (single N-channel) |
| **Maximum drain-source voltage (V_DS)** | 100V |
| **Gate-source voltage (V_GS)** | ±20V |
| **Threshold voltage (V_th)** | 1.8V |
| **On-resistance (R_DS(ON))** | 114mΩ (at V_GS = 10V) |
| **Maximum drain current (I_D)** | 15A |
| **Technology** | Trench technology|
| **Maximum power loss** | 30W (typical) |
Domain and module applications:
1. **Power management system**
SPD10N10-VB can be applied to power management fields, such as DC-DC converters, inverters, etc. Due to its low R_DS(ON) value, it can reduce power loss when current flows, thereby improving the overall efficiency of the system. Especially in power modules that require medium power, this MOSFET can effectively improve conversion efficiency and extend the service life of the equipment.
2. **Power tool drive**
In the power tool drive system, SPD10N10-VB can be used for motor control circuits. Its high current carrying capacity (15A) is suitable for driving the motor of high-power power tools, ensuring that the motor works smoothly and efficiently during startup and operation.
3. **Home appliances**
This MOSFET is also widely used in home appliances, especially in power control modules of appliances such as air conditioners and washing machines. In these devices, the SPD10N10-VB can be used to achieve efficient switching control, improve power efficiency and reduce energy loss.
4. **Automotive electronics**
This MOSFET can also be used in automotive electronic systems, especially in the battery management system (BMS) of electric vehicles (EV) and hybrid electric vehicles (HEV). It can provide efficient current control during battery charging and discharging, and help achieve efficient battery power conversion.
5. **LED driver power supply**
In LED driver power supply, SPD10N10-VB can be used in switching power supply modules. By providing low R_DS(ON) MOSFET characteristics, it can achieve efficient power conversion and support efficient and stable light source power supply.
Through these application examples, it can be seen that the high efficiency and reliability of SPD10N10-VB enable it to provide excellent performance in multiple fields and modules, especially in environments with high requirements for current carrying capacity and conversion efficiency.
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