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SPD08P06PG-VB Product details
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SPD08P06PG-VB MOSFET Product Introduction
The SPD08P06PG-VB is a high-performance single P-channel MOSFET in a TO252 package, designed for medium and high voltage applications, with a drain-source voltage (VDS) of -60V. The MOSFET has an on-resistance (RDS(ON)) of 61mΩ at a gate-source voltage (VGS) of 10V and 72mΩ at a gate voltage of 4.5V, suitable for high current loads (ID = -30A). Its low on-resistance and excellent switching performance, thanks to its Trench technology, are particularly suitable for applications such as power conversion, load switching and efficient power management.
The SPD08P06PG-VB has a low on-resistance, ensuring energy efficiency optimization in high current applications and the ability to switch at higher frequencies. With its efficient energy transfer and stable performance, this MOSFET is an ideal choice for high-efficiency power systems, inverters, battery management and other fields.
The SPD08P06PG-VB is a high-performance single P-channel MOSFET in a TO252 package, designed for medium and high voltage applications, with a drain-source voltage (VDS) of -60V. The MOSFET has an on-resistance (RDS(ON)) of 61mΩ at a gate-source voltage (VGS) of 10V and 72mΩ at a gate voltage of 4.5V, suitable for high current loads (ID = -30A). Its low on-resistance and excellent switching performance, thanks to its Trench technology, are particularly suitable for applications such as power conversion, load switching and efficient power management.
The SPD08P06PG-VB has a low on-resistance, ensuring energy efficiency optimization in high current applications and the ability to switch at higher frequencies. With its efficient energy transfer and stable performance, this MOSFET is an ideal choice for high-efficiency power systems, inverters, battery management and other fields.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -30A | 61mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -30A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -30A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
SPD08P06PG-VB MOSFET parameter description
- **Package type**: TO252
- **Configuration**: Single P channel
- **Maximum drain-source voltage (VDS)**: -60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 72mΩ @ VGS = 4.5V
- 61mΩ @ VGS = 10V
- **Maximum drain current (ID)**: -30A
- **Technology**: Trench
- **Package type**: TO252
- **Configuration**: Single P channel
- **Maximum drain-source voltage (VDS)**: -60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 72mΩ @ VGS = 4.5V
- 61mΩ @ VGS = 10V
- **Maximum drain current (ID)**: -30A
- **Technology**: Trench
Domain and module applications：
SPD08P06PG-VB MOSFET Applications
1. **DC-DC Converter**:
- SPD08P06PG-VB is suitable for DC-DC converters, especially in load switching power supplies. Its high current handling capability and low on-resistance enable it to effectively reduce energy loss in high-efficiency power conversion and improve the overall efficiency of the system. It is particularly suitable for applications that require high current carrying, such as battery-powered systems.
2. **Inverter System**:
- In inverter applications, SPD08P06PG-VB can be used to convert DC power to AC power, which is widely used in solar photovoltaic systems, wind power generation and other renewable energy systems. Low RDS(ON) helps reduce system losses and optimize power conversion efficiency.
3. **Power Tool Drive Circuit**:
- This MOSFET can be used in motor drive circuits in power tools, especially in situations where high current and high working efficiency are required. Improve tool performance and durability by reducing conduction losses and improving power conversion efficiency.
4. **Battery Management System (BMS)**:
- In the battery management system, SPD08P06PG-VB can be used for battery charge and discharge control, especially during high current charge and discharge. Low on-resistance can effectively reduce power loss, thereby optimizing battery efficiency and extending battery life.
5. **Electric Vehicle Charging System**:
- This MOSFET also has important applications in the charging system of electric vehicles, especially in on-board chargers and high-efficiency power management modules. Its high current capability and low on-resistance can ensure stable and efficient operation of electric vehicle charging systems.
6. **Switching Power Supply**:
- SPD08P06PG-VB can be widely used in various switching power supplies, including AC-DC converters, DC-AC converters and DC-DC converters. Low on-resistance and high-efficiency switching characteristics make it an ideal choice for optimizing the energy efficiency of power systems.
7. **Power Factor Correction (PFC) Circuit**:
- In the power factor correction circuit, this MOSFET can be used to improve the power factor of the system and reduce the power loss of the system. Its efficient switching performance ensures low loss and fast response, which can effectively improve the power quality.
1. **DC-DC Converter**:
- SPD08P06PG-VB is suitable for DC-DC converters, especially in load switching power supplies. Its high current handling capability and low on-resistance enable it to effectively reduce energy loss in high-efficiency power conversion and improve the overall efficiency of the system. It is particularly suitable for applications that require high current carrying, such as battery-powered systems.
2. **Inverter System**:
- In inverter applications, SPD08P06PG-VB can be used to convert DC power to AC power, which is widely used in solar photovoltaic systems, wind power generation and other renewable energy systems. Low RDS(ON) helps reduce system losses and optimize power conversion efficiency.
3. **Power Tool Drive Circuit**:
- This MOSFET can be used in motor drive circuits in power tools, especially in situations where high current and high working efficiency are required. Improve tool performance and durability by reducing conduction losses and improving power conversion efficiency.
4. **Battery Management System (BMS)**:
- In the battery management system, SPD08P06PG-VB can be used for battery charge and discharge control, especially during high current charge and discharge. Low on-resistance can effectively reduce power loss, thereby optimizing battery efficiency and extending battery life.
5. **Electric Vehicle Charging System**:
- This MOSFET also has important applications in the charging system of electric vehicles, especially in on-board chargers and high-efficiency power management modules. Its high current capability and low on-resistance can ensure stable and efficient operation of electric vehicle charging systems.
6. **Switching Power Supply**:
- SPD08P06PG-VB can be widely used in various switching power supplies, including AC-DC converters, DC-AC converters and DC-DC converters. Low on-resistance and high-efficiency switching characteristics make it an ideal choice for optimizing the energy efficiency of power systems.
7. **Power Factor Correction (PFC) Circuit**:
- In the power factor correction circuit, this MOSFET can be used to improve the power factor of the system and reduce the power loss of the system. Its efficient switching performance ensures low loss and fast response, which can effectively improve the power quality.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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