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SPD08N50C3-VB Product details

Product introduction:

SPD08N50C3-VB MOSFET Product Introduction

SPD08N50C3-VB is a high-voltage N-channel MOSFET in TO252 package with a withstand voltage of 650V, suitable for power management systems that require high voltage control. The device uses SJ_Multi-EPI technology to optimize switching characteristics and conduction performance, has a low RDS(ON) value (500mΩ@VGS=10V), and a maximum current of 9A, which can support a variety of power management applications. Due to its low Vth (3.5V), it can also work efficiently at low drive voltages, and is suitable for various high-voltage, low-power applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 650V 3.5V 9A 500mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-N 650V 3.5V 9A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-N 650V 3.5V 9A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-N
SPD08N50C3-VB MOSFET Detailed parameter description

- **Model**: SPD08N50C3-VB
- **Package**: TO252
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 500mΩ @ VGS=10V
- **Maximum drain current (ID)**: 9A
- **Technology**: SJ_Multi-EPI
- **Low conduction loss, suitable for high-efficiency power conversion applications**
- **Fast switching speed, suitable for fast switching applications**

Domain and module applications:

Application fields and module examples

SPD08N50C3-VB MOSFET is widely used in electronic systems that require high efficiency and high power processing due to its high withstand voltage and low on-resistance. The following are several typical application fields of this product:

1. **Power management module**
In DC-DC converters, SPD08N50C3-VB can be used for efficient power switches to ensure efficient energy conversion and provide stable output under high voltage input conditions. It is suitable for various power modules, such as server power supplies, automotive power supplies, etc.

2. **Switching power supply (SMPS)**
In switching power supply systems, SPD08N50C3-VB, as the main switching element, has a low RDS(ON), which can effectively reduce conduction losses and improve system efficiency. It can be used in applications such as AC-DC converters, DC-DC boost/buck converters, and is particularly suitable for high-efficiency and high-stability power conversion.

3. **Inverter**
In applications such as solar inverters, UPS power supplies and electric vehicle chargers, SPD08N50C3-VB, as a high-voltage, high-efficiency switching device, can cope with high voltage and high current scenarios in inverter operation, ensuring high efficiency and high reliability.

4. **Motor drive and control**
In industrial motor drive systems, SPD08N50C3-VB can be used as a switching element in motor control circuits. It can provide stable current output and is suitable for systems that require high voltage drive.

5. **High-power LED drive**
This MOSFET is suitable for LED driver power supplies, especially in LED backlight or lighting driver power supplies that require high voltage and high efficiency. SPD08N50C3-VB can ensure efficient drive and stable light source output, reducing system heating.

With its excellent switching performance and low on-resistance, SPD08N50C3-VB can meet the needs of a variety of high-efficiency power supply applications, especially in high voltage and high power applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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