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SPD07N60C3-VB Product details

Product introduction:

1. **Product Introduction: **

**SPD07N60C3-VB** is a single N-Channel MOSFET in TO252 package with high voltage tolerance and low on-resistance. The maximum drain-source voltage (VDS) of this model is 650V, which is suitable for high-voltage power conversion and switching applications. Its gate-source voltage (VGS) is up to 30V, which can provide flexible control. The threshold voltage (Vth) of SPD07N60C3-VB is 3.5V, with low switching loss and high efficiency. Its on-resistance (RDS(ON)) is 700mΩ (VGS=10V) and high drain current (ID up to 7A). This MOSFET adopts SJ_Multi-EPI technology, which provides superior thermal stability and higher reliability, and is particularly suitable for power and drive applications requiring high voltage tolerance and high current handling.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 650V 3.5V 7A 700mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-N 650V 3.5V 7A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-N 650V 3.5V 7A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-N
2. **Detailed parameter description:**

- **Package type**: TO252
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- When VGS=10V, N-Channel is 700mΩ
- **Maximum drain current (ID)**: 7A
- **Technology**: SJ_Multi-EPI
- **Typical application areas**: switching power supplies, inverters, battery chargers, motor drives, power modules

Domain and module applications:

3. **Application Examples:**

- **Switching Power Supply (SMPS)**: SPD07N60C3-VB is an ideal choice in switching power supply design, especially in medium to high voltage applications. With a maximum drain-source voltage of 650V, it is suitable for AC-DC or DC-DC converter circuits, which can effectively reduce switching losses and improve the overall efficiency of the system. Especially when it needs to handle high voltage and medium current loads, the performance of this MOSFET is particularly outstanding.

- **Inverter**: SPD07N60C3-VB can be widely used in inverter systems, especially in solar inverters, battery storage inverters, and uninterruptible power supplies (UPS). Its high voltage tolerance and efficient switching performance make it excellent in handling high voltage DC and AC signal conversion.

- **Battery Charger**: In battery charger design, SPD07N60C3-VB can efficiently manage the battery charging process with its high voltage and high current handling capabilities. Whether it is used for charging car batteries or charging systems for mobile devices, this MOSFET can provide stable power conversion and ensure efficient operation of the system.

- **Motor drive circuit**: In motor control and drive systems, SPD07N60C3-VB is widely used for switching control of drive motors. Its excellent current carrying capacity and low on-resistance characteristics can provide efficient drive control and reduce power loss when the motor load is large.

- **Power module**: SPD07N60C3-VB is also suitable for various power modules, such as high-voltage power converters, DC-AC converters, inverters, etc. In these applications, its high withstand voltage and low loss characteristics make it an ideal switching element, especially in power management modules that process high-voltage signals.

In summary, SPD07N60C3-VB is a high-voltage, high-current, and high-efficiency MOSFET suitable for power conversion, battery management, motor control, and various high-power power modules. Its high withstand voltage characteristics and low conduction loss enable it to perform well in many fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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