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SPD07N20 G-VB Product details
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SPD07N20 G-VB MOSFET Product Introduction
SPD07N20 G-VB is a high-performance N-Channel MOSFET in TO252 package based on Trench technology, suitable for high current and low voltage switching applications. The maximum drain-source voltage (VDS) of this MOSFET is 60V, and the gate-source voltage (VGS) can withstand ±20V. It has excellent conductivity and low on-resistance (RDS(ON)) characteristics. Its maximum drain current (ID) is 97A, which is suitable for high current load scenarios. Due to the low RDS(ON), this MOSFET can significantly reduce power loss and improve system efficiency during operation, and is particularly suitable for applications that require efficient current switching.
SPD07N20 G-VB uses Trench technology and has excellent switching performance and thermal management capabilities. It is suitable for power management, DC-DC conversion, power amplification, LED driving and other high-efficiency power conversion systems. This product is widely used in high-power switch modules, industrial power systems and motor drive control, and can provide stable and reliable current control.
SPD07N20 G-VB is a high-performance N-Channel MOSFET in TO252 package based on Trench technology, suitable for high current and low voltage switching applications. The maximum drain-source voltage (VDS) of this MOSFET is 60V, and the gate-source voltage (VGS) can withstand ±20V. It has excellent conductivity and low on-resistance (RDS(ON)) characteristics. Its maximum drain current (ID) is 97A, which is suitable for high current load scenarios. Due to the low RDS(ON), this MOSFET can significantly reduce power loss and improve system efficiency during operation, and is particularly suitable for applications that require efficient current switching.
SPD07N20 G-VB uses Trench technology and has excellent switching performance and thermal management capabilities. It is suitable for power management, DC-DC conversion, power amplification, LED driving and other high-efficiency power conversion systems. This product is widely used in high-power switch modules, industrial power systems and motor drive control, and can provide stable and reliable current control.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 3V | 97A | 4.5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 3V | 97A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 3V | 97A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
SPD07N20 G-VB Detailed parameter description
- **Package**: TO252
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 12mΩ @ VGS=4.5V
- 4.5mΩ @ VGS=10V
- **Maximum drain current (ID)**: 97A
- **Technology type**: Trench
- **Package**: TO252
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 12mΩ @ VGS=4.5V
- 4.5mΩ @ VGS=10V
- **Maximum drain current (ID)**: 97A
- **Technology type**: Trench
Domain and module applications：
Application Fields and Modules
SPD07N20 G-VB MOSFET has a wide range of applications in multiple fields and modules, especially in power control systems that require high current and high efficiency. The following are several major application fields of this model:
1. **Power Management Systems**:
SPD07N20 G-VB can be widely used in various power management systems as an efficient switching element. Its low RDS(ON) characteristics help reduce power loss and improve the conversion efficiency of the entire power system. It is especially suitable for high-efficiency power modules such as DC power converters and battery charging management systems.
2. **DC-DC Converters**:
In DC-DC converter applications, SPD07N20 G-VB acts as a switching device to provide stable current transmission and ensure efficient voltage conversion. Its high drain current carrying capacity and low on-resistance characteristics make it particularly suitable for high-efficiency power conversion systems that require high current output.
3. **Motor Drive Systems**:
SPD07N20 G-VB has important applications in motor drive control systems. It can efficiently control the current of the motor, provide precise current regulation and stable motor operation. It is particularly suitable for industrial automation equipment, power tools and electric vehicle drive systems to ensure stable operation of the motor.
4. **Industrial Power Supplies**:
The high current carrying capacity and excellent heat dissipation performance of SPD07N20 G-VB make it widely used in industrial power supply systems. This MOSFET can be used in various industrial power supplies, UPS systems, voltage-stabilized power supplies, etc., and can provide efficient and stable power conversion and power control to meet industrial applications with high power requirements.
5. **LED Drivers**:
SPD07N20 G-VB can be used in LED driver power supplies to help achieve efficient current switching. Due to its low on-resistance, this MOSFET can improve the energy efficiency of the LED drive system and reduce energy loss, thereby improving the performance and life of the overall system, and is particularly suitable for energy-efficient LED lighting products.
6. **Power Amplifiers**:
In high-power amplifier applications such as radio communications and power amplifiers, the SPD07N20 G-VB provides efficient switching characteristics, allowing the system to more accurately regulate power output. The low RDS(ON) makes the power loss of this MOSFET extremely low during the amplification process, which helps to improve the overall efficiency of the system.
7. **Battery Management Systems**:
The SPD07N20 G-VB can be used in battery management systems to control the battery charging and discharging process. Its excellent conductivity ensures that the battery can efficiently flow current under high load while maintaining low power consumption and extending battery life.
SPD07N20 G-VB MOSFET has a wide range of applications in multiple fields and modules, especially in power control systems that require high current and high efficiency. The following are several major application fields of this model:
1. **Power Management Systems**:
SPD07N20 G-VB can be widely used in various power management systems as an efficient switching element. Its low RDS(ON) characteristics help reduce power loss and improve the conversion efficiency of the entire power system. It is especially suitable for high-efficiency power modules such as DC power converters and battery charging management systems.
2. **DC-DC Converters**:
In DC-DC converter applications, SPD07N20 G-VB acts as a switching device to provide stable current transmission and ensure efficient voltage conversion. Its high drain current carrying capacity and low on-resistance characteristics make it particularly suitable for high-efficiency power conversion systems that require high current output.
3. **Motor Drive Systems**:
SPD07N20 G-VB has important applications in motor drive control systems. It can efficiently control the current of the motor, provide precise current regulation and stable motor operation. It is particularly suitable for industrial automation equipment, power tools and electric vehicle drive systems to ensure stable operation of the motor.
4. **Industrial Power Supplies**:
The high current carrying capacity and excellent heat dissipation performance of SPD07N20 G-VB make it widely used in industrial power supply systems. This MOSFET can be used in various industrial power supplies, UPS systems, voltage-stabilized power supplies, etc., and can provide efficient and stable power conversion and power control to meet industrial applications with high power requirements.
5. **LED Drivers**:
SPD07N20 G-VB can be used in LED driver power supplies to help achieve efficient current switching. Due to its low on-resistance, this MOSFET can improve the energy efficiency of the LED drive system and reduce energy loss, thereby improving the performance and life of the overall system, and is particularly suitable for energy-efficient LED lighting products.
6. **Power Amplifiers**:
In high-power amplifier applications such as radio communications and power amplifiers, the SPD07N20 G-VB provides efficient switching characteristics, allowing the system to more accurately regulate power output. The low RDS(ON) makes the power loss of this MOSFET extremely low during the amplification process, which helps to improve the overall efficiency of the system.
7. **Battery Management Systems**:
The SPD07N20 G-VB can be used in battery management systems to control the battery charging and discharging process. Its excellent conductivity ensures that the battery can efficiently flow current under high load while maintaining low power consumption and extending battery life.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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