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SPD04N50C3T-VB Product details
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SPD04N50C3T-VB Product Introduction
SPD04N50C3T-VB is a **Single-N-Channel MOSFET**, packaged as **TO252**. This MOSFET adopts **SJ_Multi-EPI** technology, has **650V** drain-source voltage (VDS) and **5A** maximum drain current (ID), which is ideal for high-voltage and high-power applications. Its **threshold voltage (Vth)** is **3.5V**, ensuring efficient operation at lower gate voltages, and its **on-resistance (RDS(ON))** is **1000mΩ**, showing excellent switching characteristics and low power consumption characteristics at **VGS = 10V**.
The high voltage tolerance of SPD04N50C3T-VB makes it very suitable for applications that require higher voltage operation, such as **power management systems**, **electric vehicle battery management**, and **DC-DC power converters**. Its **TO252 package** provides high thermal performance and current handling capability, suitable for high voltage power systems that require long-term stable operation.
SPD04N50C3T-VB is a **Single-N-Channel MOSFET**, packaged as **TO252**. This MOSFET adopts **SJ_Multi-EPI** technology, has **650V** drain-source voltage (VDS) and **5A** maximum drain current (ID), which is ideal for high-voltage and high-power applications. Its **threshold voltage (Vth)** is **3.5V**, ensuring efficient operation at lower gate voltages, and its **on-resistance (RDS(ON))** is **1000mΩ**, showing excellent switching characteristics and low power consumption characteristics at **VGS = 10V**.
The high voltage tolerance of SPD04N50C3T-VB makes it very suitable for applications that require higher voltage operation, such as **power management systems**, **electric vehicle battery management**, and **DC-DC power converters**. Its **TO252 package** provides high thermal performance and current handling capability, suitable for high voltage power systems that require long-term stable operation.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | 1000mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
SPD04N50C3T-VB Detailed parameter description
- **Model**: SPD04N50C3T-VB
- **Package type**: TO252
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1000mΩ @ VGS = 10V
- **Drain current (ID)**: 5A
- **Maximum gate-source voltage (VGS(max))**: ±30V
- **Maximum junction temperature (Tj)**: 150°C
- **Operating temperature range (Tj)**: -55°C to 150°C
- **Thermal resistance (RthJC)**: 5°C/W
- **Rated power (Pd)**: 40W (under proper heatsinking conditions)
- **Technology**: SJ_Multi-EPI
- **Junction temperature (Tj)**: 150°C
- **Model**: SPD04N50C3T-VB
- **Package type**: TO252
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1000mΩ @ VGS = 10V
- **Drain current (ID)**: 5A
- **Maximum gate-source voltage (VGS(max))**: ±30V
- **Maximum junction temperature (Tj)**: 150°C
- **Operating temperature range (Tj)**: -55°C to 150°C
- **Thermal resistance (RthJC)**: 5°C/W
- **Rated power (Pd)**: 40W (under proper heatsinking conditions)
- **Technology**: SJ_Multi-EPI
- **Junction temperature (Tj)**: 150°C
Domain and module applications：
Application fields and module examples
1. **High-voltage power management system**:
SPD04N50C3T-VB is suitable for **high-voltage power management systems**, especially in situations where higher voltages need to be tolerated, such as **high-power power converters**, **UPS power supplies**, and **battery charging management systems**. It can be used as a power switch element to optimize power conversion efficiency and reduce energy losses through low on-resistance and high current carrying capacity.
2. **Electric vehicle battery management system (BMS)**:
Due to its **650V** rated drain-source voltage, SPD04N50C3T-VB is suitable for **battery management system (BMS)** of **electric vehicles (EV)**. In the battery charge and discharge management of electric vehicles, this MOSFET provides efficient current switching and protection functions, helping to optimize the battery charging process and improve battery life and performance.
3. **DC-DC power converter**:
This MOSFET is also widely used in **DC-DC power converter**, especially in **high voltage, high current power modules**, which can efficiently regulate voltage and maintain stable output. The **low on-resistance** and **high current handling capability** of SPD04N50C3T-VB can effectively reduce power loss in the system and improve conversion efficiency. It is suitable for fields such as **communication power supply**, **industrial equipment power supply** and **solar cell inverter**.
4. **Power inverter and solar energy application**:
As a high voltage MOSFET, SPD04N50C3T-VB can withstand high voltage and effectively regulate power flow in **power inverter** and **solar power generation system**. It is suitable for **inverter** of solar photovoltaic power generation system, converting DC power into AC power, and showing efficient performance in power switching, power optimization and power transmission.
5. **Home appliance power modules**:
In **home appliances**, especially **power modules for high-power home appliances** such as air conditioners, refrigerators, and washing machines, the SPD04N50C3T-VB provides stable current switching capabilities. Due to its high current capability and good thermal performance, it ensures the safety and stability of the equipment in high-voltage power supply systems.
6. **Industrial automation and power tools**:
In fields such as **industrial automation** and **power tools**, the SPD04N50C3T-VB can be used to control the switching of high-voltage currents, help drive **electric motors** or **speed control systems**, improve system efficiency, and reduce power waste. Its high voltage carrying capacity and low on-resistance give it important advantages in these applications.
1. **High-voltage power management system**:
SPD04N50C3T-VB is suitable for **high-voltage power management systems**, especially in situations where higher voltages need to be tolerated, such as **high-power power converters**, **UPS power supplies**, and **battery charging management systems**. It can be used as a power switch element to optimize power conversion efficiency and reduce energy losses through low on-resistance and high current carrying capacity.
2. **Electric vehicle battery management system (BMS)**:
Due to its **650V** rated drain-source voltage, SPD04N50C3T-VB is suitable for **battery management system (BMS)** of **electric vehicles (EV)**. In the battery charge and discharge management of electric vehicles, this MOSFET provides efficient current switching and protection functions, helping to optimize the battery charging process and improve battery life and performance.
3. **DC-DC power converter**:
This MOSFET is also widely used in **DC-DC power converter**, especially in **high voltage, high current power modules**, which can efficiently regulate voltage and maintain stable output. The **low on-resistance** and **high current handling capability** of SPD04N50C3T-VB can effectively reduce power loss in the system and improve conversion efficiency. It is suitable for fields such as **communication power supply**, **industrial equipment power supply** and **solar cell inverter**.
4. **Power inverter and solar energy application**:
As a high voltage MOSFET, SPD04N50C3T-VB can withstand high voltage and effectively regulate power flow in **power inverter** and **solar power generation system**. It is suitable for **inverter** of solar photovoltaic power generation system, converting DC power into AC power, and showing efficient performance in power switching, power optimization and power transmission.
5. **Home appliance power modules**:
In **home appliances**, especially **power modules for high-power home appliances** such as air conditioners, refrigerators, and washing machines, the SPD04N50C3T-VB provides stable current switching capabilities. Due to its high current capability and good thermal performance, it ensures the safety and stability of the equipment in high-voltage power supply systems.
6. **Industrial automation and power tools**:
In fields such as **industrial automation** and **power tools**, the SPD04N50C3T-VB can be used to control the switching of high-voltage currents, help drive **electric motors** or **speed control systems**, improve system efficiency, and reduce power waste. Its high voltage carrying capacity and low on-resistance give it important advantages in these applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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