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SPD03N60S5-VB Product details

Product introduction:

1. **Product Introduction: **

**SPD03N60S5-VB** is a single N-Channel structure MOSFET in TO252 package, designed for high voltage and high efficiency applications. The maximum drain-source voltage (VDS) of this model is 650V, which is suitable for use in medium and high voltage power supply circuits. Its maximum gate-source voltage (VGS) is 30V, which enables control operations at higher voltages. SPD03N60S5-VB adopts SJ_Multi-EPI technology, which has high stability and low on-resistance. Despite the on-resistance of 1000mΩ, it still shows excellent performance in high voltage applications. This MOSFET is suitable for a variety of application scenarios such as power modules, switching power supplies, and home appliance control that need to handle medium current (maximum 5A) and high voltage.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 650V 3.5V 5A 1000mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-N 650V 3.5V 5A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-N 650V 3.5V 5A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-N
2. **Detailed parameter description:**

- **Package type**: TO252
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- When VGS=10V, RDS(ON) is 1000mΩ
- **Maximum drain current (ID)**: 5A
- **Technology**: SJ_Multi-EPI
- **Typical application areas**: switching power supply, inverter, battery charger, motor drive, power module

Domain and module applications:

3. **Application Examples:**

- **Switching Power Supply (SMPS)**: The SPD03N60S5-VB is suitable for high voltage applications such as switching power supply designs due to its high drain-source voltage of 650V. In such applications, it can withstand large voltage changes, and its low leakage current characteristics can effectively improve the efficiency of the switching power supply and reduce heat loss.

- **Inverter**: In solar inverters or uninterruptible power supplies (UPS), the SPD03N60S5-VB is an ideal choice due to its high voltage resistance and high current handling capability. It can effectively control the current flow and maintain stable operation under large current loads.

- **Battery Charger**: This MOSFET can be used in battery charger circuits, especially in charging scenarios that require higher voltages (such as automotive battery charging systems). The high voltage tolerance and stability of the SPD03N60S5-VB ensure efficient and stable power conversion during battery charging.

- **Motor drive circuit**: In the motor control system, SPD03N60S5-VB can be used in the motor drive circuit to provide efficient switching operation. Especially in the field of industrial motor drive and household appliance motor drive, the high voltage and low power consumption characteristics of this MOSFET make it an ideal choice.

- **Power module**: Due to its high voltage resistance and stable conduction characteristics, SPD03N60S5-VB is also suitable for various power modules, such as high-voltage power converters, DC-AC converters, inverters, etc.

In summary, SPD03N60S5-VB has a wide range of applicability in high-voltage applications, especially in the fields of power management, inverters, battery charging, and motor drives, providing efficient and reliable solutions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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