中文
English
SPB80N08S2-07-VB Product details
Back to previous pageProduct introduction：
# **Product Introduction**
SPB80N08S2-07-VB is a single N-channel MOSFET in a TO263 package, designed for high current, high frequency, and low power consumption applications. It has a maximum drain-source voltage (V_DS) of 80V, suitable for power conversion and switching applications in the medium voltage range. The on-resistance (R_DS(ON)) of this MOSFET is extremely low, between 10mΩ (V_GS = 4.5V) and 6mΩ (V_GS = 10V), enabling it to operate efficiently at high currents. The maximum drain current (I_D) is 120A, which makes it excel in areas such as high current power management, power switching, and motor drives. Using Trench technology, the SPB80N08S2-07-VB provides low switching losses and high switching frequencies, ensuring that the system operates efficiently and reliably.
SPB80N08S2-07-VB is a single N-channel MOSFET in a TO263 package, designed for high current, high frequency, and low power consumption applications. It has a maximum drain-source voltage (V_DS) of 80V, suitable for power conversion and switching applications in the medium voltage range. The on-resistance (R_DS(ON)) of this MOSFET is extremely low, between 10mΩ (V_GS = 4.5V) and 6mΩ (V_GS = 10V), enabling it to operate efficiently at high currents. The maximum drain current (I_D) is 120A, which makes it excel in areas such as high current power management, power switching, and motor drives. Using Trench technology, the SPB80N08S2-07-VB provides low switching losses and high switching frequencies, ensuring that the system operates efficiently and reliably.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
**Product parameter description**
- **Package type**: TO263
The TO263 package has a large heat dissipation capacity, which enables the SPB80N08S2-07-VB to effectively dissipate heat under high power loads and is suitable for high current working environments.
- **Configuration**: Single N-channel
The single N-channel MOSFET configuration makes it suitable for most power conversion circuits, which can effectively control the flow of current and achieve low loss and fast response switching operations.
- **V_DS (drain-source voltage)**: 80V
The maximum drain-source voltage of this MOSFET is 80V, which is suitable for medium power applications within this voltage range and can withstand power supply voltage fluctuations and short-term overvoltage shocks.
- **V_GS (gate-source voltage)**: ±20V
The maximum gate-source voltage is ±20V, which makes this MOSFET compatible with various standard gate drive circuits and meets the needs of most switch control applications.
- **V_th (gate threshold voltage)**: 3V
The gate threshold voltage is 3V, which ensures that the MOSFET can be turned on at a lower gate voltage, suitable for low-voltage drive circuits, and improves the overall efficiency of the power supply.
- **R_DS(ON) (on-resistance)**: 10mΩ@V_GS = 4.5V, 6mΩ@V_GS = 10V
The extremely low on-resistance minimizes the heat and power loss generated by the MOSFET when it is powered on, improving the efficiency of power conversion and reducing unnecessary heat generation.
- **I_D (drain current)**: 120A
The MOSFET can carry a drain current of up to 120A, which is very suitable for high-power applications and can handle large current loads without generating excessive heat.
- **Technology Type**: Trench
Using Trench technology, this manufacturing process enables MOSFET to have extremely low on-resistance and excellent switching performance under high frequency and high current operation, thereby reducing power loss and improving efficiency.
- **Package type**: TO263
The TO263 package has a large heat dissipation capacity, which enables the SPB80N08S2-07-VB to effectively dissipate heat under high power loads and is suitable for high current working environments.
- **Configuration**: Single N-channel
The single N-channel MOSFET configuration makes it suitable for most power conversion circuits, which can effectively control the flow of current and achieve low loss and fast response switching operations.
- **V_DS (drain-source voltage)**: 80V
The maximum drain-source voltage of this MOSFET is 80V, which is suitable for medium power applications within this voltage range and can withstand power supply voltage fluctuations and short-term overvoltage shocks.
- **V_GS (gate-source voltage)**: ±20V
The maximum gate-source voltage is ±20V, which makes this MOSFET compatible with various standard gate drive circuits and meets the needs of most switch control applications.
- **V_th (gate threshold voltage)**: 3V
The gate threshold voltage is 3V, which ensures that the MOSFET can be turned on at a lower gate voltage, suitable for low-voltage drive circuits, and improves the overall efficiency of the power supply.
- **R_DS(ON) (on-resistance)**: 10mΩ@V_GS = 4.5V, 6mΩ@V_GS = 10V
The extremely low on-resistance minimizes the heat and power loss generated by the MOSFET when it is powered on, improving the efficiency of power conversion and reducing unnecessary heat generation.
- **I_D (drain current)**: 120A
The MOSFET can carry a drain current of up to 120A, which is very suitable for high-power applications and can handle large current loads without generating excessive heat.
- **Technology Type**: Trench
Using Trench technology, this manufacturing process enables MOSFET to have extremely low on-resistance and excellent switching performance under high frequency and high current operation, thereby reducing power loss and improving efficiency.
Domain and module applications：
**Applications and Module Examples**
1. **DC-DC Converters**
The low on-resistance and high current carrying capacity of SPB80N08S2-07-VB enable efficient voltage conversion in DC-DC converters and optimize the efficiency of battery-powered systems.
**Example**: In the power system of power tools or electric bicycles, SPB80N08S2-07-VB can be used as a switching element to optimize the conversion of battery energy and provide efficient and stable power output.
2. **Motor Drive Systems**
The drain current of up to 120A and low on-resistance make SPB80N08S2-07-VB very suitable for motor drive applications, especially in motor drive systems that require high power and high current control.
**Example**: In industrial automation, SPB80N08S2-07-VB can be used to drive high-power motors, improve production efficiency, and reduce power loss in the system.
3. **Battery Management Systems**
Due to its low switching loss and high current capability, SPB80N08S2-07-VB is an ideal choice in battery management systems. It can effectively control the battery charging and discharging process, improve the overall system efficiency, and ensure the safe operation of the battery.
**Example**: In the battery management system of electric vehicles, SPB80N08S2-07-VB can be used for battery current regulation and voltage protection, improving the stability and efficiency of the battery during charging and discharging.
4. **Power Supplies**
The ultra-low on-resistance of the SPB80N08S2-07-VB makes it ideal for use in power supplies, reducing losses during power conversion and improving the overall efficiency of the power supply.
**Example**: In a computer power supply unit (PSU), the SPB80N08S2-07-VB can be used as the main switching element to ensure efficient power transmission and energy saving performance.
5. **Uninterruptible Power Systems (UPS Systems)**
The MOSFET can also be used in UPS systems to ensure continuous power to critical equipment during power outages. The low on-resistance and high current carrying capacity make the SPB80N08S2-07-VB have efficient power management capabilities in UPS applications.
**Example**: In data centers or medical equipment, SPB80N08S2-07-VB can be used in UPS systems to ensure stable power support during sudden power outages.
6. **Power Switching Circuits**
In power switching circuits, SPB80N08S2-07-VB provides efficient current switching capabilities and can operate stably under high frequency and high current conditions.
**Example**: In high-efficiency power conversion applications such as battery chargers or solar inverters, SPB80N08S2-07-VB can be used as a switching element to ensure efficient power conversion and reduce heat generation.
1. **DC-DC Converters**
The low on-resistance and high current carrying capacity of SPB80N08S2-07-VB enable efficient voltage conversion in DC-DC converters and optimize the efficiency of battery-powered systems.
**Example**: In the power system of power tools or electric bicycles, SPB80N08S2-07-VB can be used as a switching element to optimize the conversion of battery energy and provide efficient and stable power output.
2. **Motor Drive Systems**
The drain current of up to 120A and low on-resistance make SPB80N08S2-07-VB very suitable for motor drive applications, especially in motor drive systems that require high power and high current control.
**Example**: In industrial automation, SPB80N08S2-07-VB can be used to drive high-power motors, improve production efficiency, and reduce power loss in the system.
3. **Battery Management Systems**
Due to its low switching loss and high current capability, SPB80N08S2-07-VB is an ideal choice in battery management systems. It can effectively control the battery charging and discharging process, improve the overall system efficiency, and ensure the safe operation of the battery.
**Example**: In the battery management system of electric vehicles, SPB80N08S2-07-VB can be used for battery current regulation and voltage protection, improving the stability and efficiency of the battery during charging and discharging.
4. **Power Supplies**
The ultra-low on-resistance of the SPB80N08S2-07-VB makes it ideal for use in power supplies, reducing losses during power conversion and improving the overall efficiency of the power supply.
**Example**: In a computer power supply unit (PSU), the SPB80N08S2-07-VB can be used as the main switching element to ensure efficient power transmission and energy saving performance.
5. **Uninterruptible Power Systems (UPS Systems)**
The MOSFET can also be used in UPS systems to ensure continuous power to critical equipment during power outages. The low on-resistance and high current carrying capacity make the SPB80N08S2-07-VB have efficient power management capabilities in UPS applications.
**Example**: In data centers or medical equipment, SPB80N08S2-07-VB can be used in UPS systems to ensure stable power support during sudden power outages.
6. **Power Switching Circuits**
In power switching circuits, SPB80N08S2-07-VB provides efficient current switching capabilities and can operate stably under high frequency and high current conditions.
**Example**: In high-efficiency power conversion applications such as battery chargers or solar inverters, SPB80N08S2-07-VB can be used as a switching element to ensure efficient power conversion and reduce heat generation.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
