SPB80N06S2L-06-VB Product details
Product introduction:
SPB80N06S2L-06-VB is a high-performance N-channel MOSFET in TO263 package, designed for high current, high power and low on-resistance applications. Its maximum drain-source voltage (V_DS) is 60V and the maximum drain current (I_D) can reach 150A. This MOSFET adopts advanced Trench technology and has extremely low on-resistance (R_DS(ON) is 4mΩ), which can greatly reduce energy loss and improve current transmission efficiency. It is suitable for scenarios requiring fast switching and high current carrying. SPB80N06S2L-06-VB has excellent electrical properties and is widely used in power management, battery protection, DC motor drive, industrial control and other fields.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | 4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
- **Model**: SPB80N06S2L-06-VB
- **Package type**: TO263
- **Configuration**: Single N-channel MOSFET
- **Maximum drain-source voltage (V_DS)**: 60V
- **Gate-source voltage (V_GS)**: ±20V
- **Throughput voltage (V_th)**: 3V
- **On-resistance (R_DS(ON))**:
- 4mΩ @ V_GS = 10V
- **Drain current (I_D)**: 150A
- **Technology type**: Trench technology
- **Maximum power dissipation (P_max)**: Can be calculated according to the application
- **Operating temperature range**: -55°C to 150°C
- **R_Gate (gate resistance)**: Usually 0Ω, depending on the design of the application circuit
Domain and module applications:
1. **High-efficiency DC-DC converters**
SPB80N06S2L-06-VB excels in high-efficiency DC-DC converters, especially in applications that need to carry large currents while maintaining low on-resistance. The low R_DS(ON) characteristics of this MOSFET greatly reduce power losses and are suitable for power supplies, UPS systems, distributed power systems, and other occasions. During high-current power conversion, SPB80N06S2L-06-VB can provide stable and efficient performance.
2. **Battery Management System (BMS)**
In the battery management system, SPB80N06S2L-06-VB can be used for switch control in charging and discharging circuits to help improve charging and discharging efficiency. Low losses due to low R_DS(ON) are essential for fast charging and long life of batteries, especially in electric vehicles, energy storage systems, and portable electronic devices. The high current carrying capacity enables it to efficiently handle the charging and discharging needs of the battery, ensuring battery safety and optimizing energy management.
3. **Electric Vehicle and Hybrid Vehicle Power Systems**
The power management systems of electric vehicles (EVs) and hybrid vehicles (HEVs) usually require efficient current control and battery management, and the SPB80N06S2L-06-VB can meet this demand. With a maximum drain-source voltage of 60V, it can efficiently manage the flow of power between the battery and the motor, reduce energy loss and improve the efficiency of the overall power system. This MOSFET can also be used in the charging management module of electric vehicles to improve charging speed and system stability.
4. **Industrial Drive and Motor Control**
SPB80N06S2L-06-VB is widely used in motor drive systems, especially in DC motor (DC) and brushless DC motor (BLDC) drives. Its high current carrying capacity enables it to provide stable drive current in industrial automation and robotics. The low on-resistance of the MOSFET helps reduce the energy loss generated during the motor drive process, thereby improving the efficiency of the motor and the reliability of the system.
5. **Power Modules and Switching Power Supplies**
SPB80N06S2L-06-VB can be widely used in high-efficiency power modules and switching power supplies (SMPS), especially in high-current output applications. Low on-resistance and high current capability enable it to reduce power loss and temperature rise in power supply design, increasing system stability and reliability. It can be used in a variety of industrial power supplies, communication power supplies, and computer power supply modules to provide efficient energy conversion.
6. **Radio and Communication Equipment**
SPB80N06S2L-06-VB can be used as a power amplifier or switching element in radio and communication equipment, and is used in modules such as radio frequency (RF) power amplifiers and signal amplifiers. Its low on-resistance and high current handling capability make it suitable for high-power power supplies and high-frequency circuits to ensure signal stability and efficient transmission.
7. **Consumer Electronics Devices**
This MOSFET can also be used in consumer electronic devices, especially in applications that require efficient power conversion and management. It can support functions such as battery management, power conversion modules and load switches in devices such as smartphones and tablets, ensuring efficient operation of the devices and extending battery life.
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