SPB80N06S2L-05-VB Product details
Product introduction:
SPB80N06S2L-05-VB is a high-performance single N-channel MOSFET in TO263 package, designed for high current and high efficiency applications. This MOSFET has a drain-source voltage (V_DS) of 60V and supports a maximum drain current (I_D) of 210A, suitable for power management and power conversion systems that require high power and high current. The threshold voltage (V_th) of SPB80N06S2L-05-VB is 3V, ensuring that it can be effectively turned on at a lower gate-source voltage, and has a very low on-resistance (R_DS(ON)), which is 12mΩ (V_GS=4.5V) and 3.2mΩ (V_GS=10V), respectively, so that it has excellent conductivity and thermal management capabilities under high current working conditions. Using Trench technology, SPB80N06S2L-05-VB provides low switching loss and high efficiency, and is widely used in power modules, DC-DC converters, power-intensive modules, and high-power current control fields.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 210A | 3.2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 210A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 210A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
- **Package**: TO263
- **Configuration**: Single N channel
- **Drain-source voltage (V_DS)**: 60V
- **Gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: 3V
- **On-resistance (R_DS(ON))**:
- 12mΩ (V_GS=4.5V)
- 3.2mΩ (V_GS=10V)
- **Maximum drain current (I_D)**: 210A
- **Technology**: Trench (trench technology)
- **Application scenarios**: high current power management, DC-DC converters, battery management systems, power-intensive modules, etc.
Domain and module applications:
1. **High-power power management system**:
SPB80N06S2L-05-VB can be widely used in power management systems that require high current output, especially in high-power battery-driven devices such as power tools, electric bicycles, electric vehicles, etc. The 210A maximum drain current capability and low on-resistance (3.2mΩ) of this MOSFET enable it to maintain low temperature operation under high power loads, ensuring the efficiency and stability of power management.
2. **DC-DC converter**:
As the core switching element in high current applications, SPB80N06S2L-05-VB is suitable for various DC-DC converters (such as buck converters, boost converters, etc.). This MOSFET has excellent conductivity under high current and low voltage conditions, which can significantly reduce energy loss during the conversion process, so it is widely used in various power conditioning equipment. Especially in high power density applications such as automotive power management, industrial automation systems and solar inverters, it has good performance.
3. **Battery Management System (BMS)**:
In the battery management system, SPB80N06S2L-05-VB is used for battery charge and discharge control. Its 60V drain-source voltage and 210A drain current capability make it suitable for the management of high-current battery packs, especially for electric vehicles, energy storage systems and other high-power battery systems. Its low on-resistance (3.2mΩ) and high switching efficiency ensure high efficiency and long service life of the battery during the charge and discharge process.
4. **Power-intensive modules**:
SPB80N06S2L-05-VB is an ideal choice in power-intensive modules, especially in high-efficiency power conversion and regulation modules. In these applications, the low on-resistance and high current carrying capacity of this MOSFET enable it to provide efficient power regulation, reduce heat generation, and improve the overall efficiency of the system. It is widely used in high-power power supply systems, industrial power modules, communication equipment power modules and other fields.
5. **Motor drive system**:
SPB80N06S2L-05-VB can also be used in motor drive systems, especially in the switching control of high-current motors. Its high current carrying capacity and low on-resistance enable it to effectively control current in power tools, electric vehicles or other high-power motor control systems, provide efficient power transmission, and optimize the working efficiency of the motor.
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