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SPB80N03S2L-08-VB Product details
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# **Product Introduction**
SPB80N03S2L-08-VB is a high-performance single N-channel MOSFET in TO263 package, designed for high current and high-efficiency power control applications. With a maximum drain-source voltage (V_DS) of 30V and a maximum drain current (I_D) of 98A, this MOSFET has an extremely low on-resistance (R_DS(ON) = 2.7mΩ@V_GS = 4.5V, R_DS(ON) = 2.4mΩ@V_GS = 10V), and can provide excellent performance in motor drive, DC-DC conversion, power supply and other high-power applications. Its Trench technology ensures excellent performance in high-speed switching applications, with lower switching loss and power loss, and is suitable for environments requiring high current and high efficiency.
SPB80N03S2L-08-VB is a high-performance single N-channel MOSFET in TO263 package, designed for high current and high-efficiency power control applications. With a maximum drain-source voltage (V_DS) of 30V and a maximum drain current (I_D) of 98A, this MOSFET has an extremely low on-resistance (R_DS(ON) = 2.7mΩ@V_GS = 4.5V, R_DS(ON) = 2.4mΩ@V_GS = 10V), and can provide excellent performance in motor drive, DC-DC conversion, power supply and other high-power applications. Its Trench technology ensures excellent performance in high-speed switching applications, with lower switching loss and power loss, and is suitable for environments requiring high current and high efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | 2.4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
**Product parameter description**
- **Package type**: TO263
The TO263 package provides good thermal management capabilities, allowing the MOSFET to effectively dissipate heat and maintain stable operation when operating under high power loads. Its size is suitable for the thermal requirements of high-power applications.
- **Configuration**: Single N channel
Adopting a single N channel configuration, it has excellent current control performance and is suitable for applications that require fast switching and high current capacity.
- **V_DS (drain-source voltage)**: 30V
The maximum drain-source voltage is 30V, which is suitable for low to medium voltage power conversion systems, and can withstand a certain overvoltage to ensure circuit safety.
- **V_GS (gate-source voltage)**: ±20V
The maximum gate-source voltage is ±20V, providing flexible driving capabilities and compatible with a variety of power drive circuits.
- **V_th (gate threshold voltage)**: 1.7V
The gate threshold voltage of this MOSFET is 1.7V, which ensures that it can be turned on at a lower gate voltage, which is particularly suitable for low-voltage drive circuits and high-efficiency switching applications.
- **R_DS(ON) (on-resistance)**: 2.7mΩ@V_GS = 4.5V, 2.4mΩ@V_GS = 10V
The ultra-low on-resistance enables this MOSFET to significantly reduce power loss when switching and improve system efficiency. Low R_DS(ON) makes it very suitable for high-frequency and high-current applications.
- **I_D (drain current)**: 98A
The maximum drain current is 98A, which can withstand high current loads and is suitable for high-power systems such as motor drives, power conversion and other fields.
- **Technology Type**: Trench
Trench technology has lower on-resistance and lower switching losses, making it particularly suitable for high-speed switching applications. It also improves the thermal efficiency of the device and reduces power losses, making the SPB80N03S2L-08-VB an excellent choice for applications that require high-efficiency, high-frequency operation.
- **Package type**: TO263
The TO263 package provides good thermal management capabilities, allowing the MOSFET to effectively dissipate heat and maintain stable operation when operating under high power loads. Its size is suitable for the thermal requirements of high-power applications.
- **Configuration**: Single N channel
Adopting a single N channel configuration, it has excellent current control performance and is suitable for applications that require fast switching and high current capacity.
- **V_DS (drain-source voltage)**: 30V
The maximum drain-source voltage is 30V, which is suitable for low to medium voltage power conversion systems, and can withstand a certain overvoltage to ensure circuit safety.
- **V_GS (gate-source voltage)**: ±20V
The maximum gate-source voltage is ±20V, providing flexible driving capabilities and compatible with a variety of power drive circuits.
- **V_th (gate threshold voltage)**: 1.7V
The gate threshold voltage of this MOSFET is 1.7V, which ensures that it can be turned on at a lower gate voltage, which is particularly suitable for low-voltage drive circuits and high-efficiency switching applications.
- **R_DS(ON) (on-resistance)**: 2.7mΩ@V_GS = 4.5V, 2.4mΩ@V_GS = 10V
The ultra-low on-resistance enables this MOSFET to significantly reduce power loss when switching and improve system efficiency. Low R_DS(ON) makes it very suitable for high-frequency and high-current applications.
- **I_D (drain current)**: 98A
The maximum drain current is 98A, which can withstand high current loads and is suitable for high-power systems such as motor drives, power conversion and other fields.
- **Technology Type**: Trench
Trench technology has lower on-resistance and lower switching losses, making it particularly suitable for high-speed switching applications. It also improves the thermal efficiency of the device and reduces power losses, making the SPB80N03S2L-08-VB an excellent choice for applications that require high-efficiency, high-frequency operation.
Domain and module applications：
**Application Fields and Module Examples**
1. **DC-DC Converters**
SPB80N03S2L-08-VB is widely used in DC-DC converters, especially in high current applications. Its low on-resistance and high current carrying capacity make it an important choice for high-efficiency power conversion. By optimizing switching losses, overall efficiency is improved and energy waste is reduced.
**Example**: In high-power industrial power supplies, SPB80N03S2L-08-VB can be used as a switching element in a DC-DC converter to convert voltage from a high-voltage battery or power supply to a low-voltage circuit to provide stable power support.
2. **Motor Drive Systems**
This MOSFET is suitable for motor control systems, especially in motor drive applications. It can stably control the operation of high-current motors, adapt to the needs of high-current loads, and ensure efficient start, run and stop control of motors.
**Example**: In the motor drive of power tools, SPB80N03S2L-08-VB can be used to regulate the battery current flowing to the motor, optimize the control of the motor, reduce power loss, and improve the working efficiency of the tool.
3. **Battery Management Systems**
SPB80N03S2L-08-VB can be used for switch control in battery management systems, especially in high-power lithium battery systems, it helps manage the battery charging and discharging process to maintain safe and stable operation of the battery.
**Example**: In the battery management system of electric vehicles, SPB80N03S2L-08-VB can regulate the battery charging and discharging speed and provide overcurrent protection to ensure the high efficiency of the battery.
4. **Uninterruptible Power Systems (UPS Systems)**
In an uninterruptible power supply (UPS), the SPB80N03S2L-08-VB can be used as a switching element to provide efficient power management. Its ultra-low on-resistance helps reduce switching losses, improves the overall efficiency of the UPS, and ensures stable power supply during power outages.
**Example**: In a UPS system in a data center, the SPB80N03S2L-08-VB can be used as a transfer switch to ensure that equipment is continuously powered during power outages, thereby avoiding system failures.
5. **Power Switching Circuits**
Due to its ultra-low on-resistance and high current capability, this MOSFET is suitable for a variety of power switching circuits, such as power management, inverters, etc. It can efficiently regulate power flow and optimize the power conversion process.
**Example**: In solar inverters, the SPB80N03S2L-08-VB can be used as a key switching element to efficiently convert DC to AC and provide stable power output to the grid.
6. **Smart Power Devices**
This MOSFET performs well in smart power devices, especially in high-frequency, high-current power management applications. Its low switching losses and high efficiency make it an ideal choice for advanced power management systems.
**Example**: In high-efficiency LED driver power supplies, the SPB80N03S2L-08-VB can provide reliable power regulation to ensure that LED lamps operate stably under high-efficiency working conditions.
1. **DC-DC Converters**
SPB80N03S2L-08-VB is widely used in DC-DC converters, especially in high current applications. Its low on-resistance and high current carrying capacity make it an important choice for high-efficiency power conversion. By optimizing switching losses, overall efficiency is improved and energy waste is reduced.
**Example**: In high-power industrial power supplies, SPB80N03S2L-08-VB can be used as a switching element in a DC-DC converter to convert voltage from a high-voltage battery or power supply to a low-voltage circuit to provide stable power support.
2. **Motor Drive Systems**
This MOSFET is suitable for motor control systems, especially in motor drive applications. It can stably control the operation of high-current motors, adapt to the needs of high-current loads, and ensure efficient start, run and stop control of motors.
**Example**: In the motor drive of power tools, SPB80N03S2L-08-VB can be used to regulate the battery current flowing to the motor, optimize the control of the motor, reduce power loss, and improve the working efficiency of the tool.
3. **Battery Management Systems**
SPB80N03S2L-08-VB can be used for switch control in battery management systems, especially in high-power lithium battery systems, it helps manage the battery charging and discharging process to maintain safe and stable operation of the battery.
**Example**: In the battery management system of electric vehicles, SPB80N03S2L-08-VB can regulate the battery charging and discharging speed and provide overcurrent protection to ensure the high efficiency of the battery.
4. **Uninterruptible Power Systems (UPS Systems)**
In an uninterruptible power supply (UPS), the SPB80N03S2L-08-VB can be used as a switching element to provide efficient power management. Its ultra-low on-resistance helps reduce switching losses, improves the overall efficiency of the UPS, and ensures stable power supply during power outages.
**Example**: In a UPS system in a data center, the SPB80N03S2L-08-VB can be used as a transfer switch to ensure that equipment is continuously powered during power outages, thereby avoiding system failures.
5. **Power Switching Circuits**
Due to its ultra-low on-resistance and high current capability, this MOSFET is suitable for a variety of power switching circuits, such as power management, inverters, etc. It can efficiently regulate power flow and optimize the power conversion process.
**Example**: In solar inverters, the SPB80N03S2L-08-VB can be used as a key switching element to efficiently convert DC to AC and provide stable power output to the grid.
6. **Smart Power Devices**
This MOSFET performs well in smart power devices, especially in high-frequency, high-current power management applications. Its low switching losses and high efficiency make it an ideal choice for advanced power management systems.
**Example**: In high-efficiency LED driver power supplies, the SPB80N03S2L-08-VB can provide reliable power regulation to ensure that LED lamps operate stably under high-efficiency working conditions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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