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SPB80N03S2L-06-VB Product details
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SPB80N03S2L-06-VB MOSFET Product Introduction
SPB80N03S2L-06-VB is a high-performance single N-channel MOSFET in TO263 package, designed for high-efficiency power management, high-speed switching and high-current load applications. The maximum drain-source voltage (VDS) of this MOSFET is 30V, and it can withstand a leakage current of up to 98A. SPB80N03S2L-06-VB uses advanced Trench technology to give it a very low on-resistance (RDS(ON) is 2.4mΩ at 10V), which effectively reduces power loss and improves the efficiency of the overall system. This MOSFET is suitable for a variety of power management and control applications, and is an ideal choice for improving system performance and saving energy and reducing consumption.
SPB80N03S2L-06-VB is a high-performance single N-channel MOSFET in TO263 package, designed for high-efficiency power management, high-speed switching and high-current load applications. The maximum drain-source voltage (VDS) of this MOSFET is 30V, and it can withstand a leakage current of up to 98A. SPB80N03S2L-06-VB uses advanced Trench technology to give it a very low on-resistance (RDS(ON) is 2.4mΩ at 10V), which effectively reduces power loss and improves the efficiency of the overall system. This MOSFET is suitable for a variety of power management and control applications, and is an ideal choice for improving system performance and saving energy and reducing consumption.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | 2.4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
SPB80N03S2L-06-VB MOSFET parameter description
- **Package type**: TO263
- **Configuration**: Single N channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 2.7mΩ @ VGS = 4.5V
- 2.4mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 98A
- **Technology**: Trench
- **Package type**: TO263
- **Configuration**: Single N channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 2.7mΩ @ VGS = 4.5V
- 2.4mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 98A
- **Technology**: Trench
Domain and module applications：
SPB80N03S2L-06-VB MOSFET Applications
1. **Power Management System (SMPS)**:
- SPB80N03S2L-06-VB is ideal for high-efficiency switching power supplies (SMPS) such as DC-DC converters, power adapters, inverters, etc. Its low RDS(ON) and high current handling capability help reduce power losses during power conversion and improve power efficiency, especially under high load conditions.
2. **Motor Control System**:
- Due to its high current carrying capacity, SPB80N03S2L-06-VB is suitable for motor control and drive systems such as brushless DC motor (BLDC) drives. It can provide a smooth current supply, reduce system power consumption, and improve the working efficiency and response speed of the motor.
3. **Battery Management System (BMS)**:
- In the battery management system, SPB80N03S2L-06-VB can be used for efficient battery charge and discharge control. Due to its low on-resistance and high current capability, it can effectively improve the battery charging efficiency, reduce energy loss and extend the battery life.
4. **Power Factor Correction (PFC) Circuit**:
- SPB80N03S2L-06-VB is suitable for power factor correction circuit (PFC). Through its low RDS(ON) and excellent switching characteristics, it can optimize the power factor of the power supply, reduce harmonic distortion in the power supply and improve the efficiency of the power system.
5. **LED Driver**:
- In the LED driver, SPB80N03S2L-06-VB can provide stable current output while reducing energy loss. Its low on-resistance and high current handling capability are particularly suitable for high-power LED systems, which can significantly improve system efficiency and reduce heat generation.
6. **Automotive Electronic Systems**:
- In electric vehicles (EV) and hybrid electric vehicles (HEV), SPB80N03S2L-06-VB can provide efficient power management and motor drive, especially in the fields of battery charging and discharging, power conversion, etc. Its high current capability and low power loss make it a key component in automotive electronic systems.
7. **Consumer Electronics**:
- SPB80N03S2L-06-VB is also widely used in various consumer electronic products, especially in laptops and portable power devices, to provide efficient power management, extend battery life and reduce power consumption.
8. **Power Electronics**:
- This MOSFET is suitable for switching, protection and regulation circuits in power electronic equipment, such as uninterruptible power supplies (UPS), power converters and inverters. Its excellent switching performance and low power consumption make it ideal for improving overall power conversion efficiency.
1. **Power Management System (SMPS)**:
- SPB80N03S2L-06-VB is ideal for high-efficiency switching power supplies (SMPS) such as DC-DC converters, power adapters, inverters, etc. Its low RDS(ON) and high current handling capability help reduce power losses during power conversion and improve power efficiency, especially under high load conditions.
2. **Motor Control System**:
- Due to its high current carrying capacity, SPB80N03S2L-06-VB is suitable for motor control and drive systems such as brushless DC motor (BLDC) drives. It can provide a smooth current supply, reduce system power consumption, and improve the working efficiency and response speed of the motor.
3. **Battery Management System (BMS)**:
- In the battery management system, SPB80N03S2L-06-VB can be used for efficient battery charge and discharge control. Due to its low on-resistance and high current capability, it can effectively improve the battery charging efficiency, reduce energy loss and extend the battery life.
4. **Power Factor Correction (PFC) Circuit**:
- SPB80N03S2L-06-VB is suitable for power factor correction circuit (PFC). Through its low RDS(ON) and excellent switching characteristics, it can optimize the power factor of the power supply, reduce harmonic distortion in the power supply and improve the efficiency of the power system.
5. **LED Driver**:
- In the LED driver, SPB80N03S2L-06-VB can provide stable current output while reducing energy loss. Its low on-resistance and high current handling capability are particularly suitable for high-power LED systems, which can significantly improve system efficiency and reduce heat generation.
6. **Automotive Electronic Systems**:
- In electric vehicles (EV) and hybrid electric vehicles (HEV), SPB80N03S2L-06-VB can provide efficient power management and motor drive, especially in the fields of battery charging and discharging, power conversion, etc. Its high current capability and low power loss make it a key component in automotive electronic systems.
7. **Consumer Electronics**:
- SPB80N03S2L-06-VB is also widely used in various consumer electronic products, especially in laptops and portable power devices, to provide efficient power management, extend battery life and reduce power consumption.
8. **Power Electronics**:
- This MOSFET is suitable for switching, protection and regulation circuits in power electronic equipment, such as uninterruptible power supplies (UPS), power converters and inverters. Its excellent switching performance and low power consumption make it ideal for improving overall power conversion efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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