Featured Model

SPB80N03S2L06T-VB Product details

Product introduction:

SPB80N03S2L06T-VB MOSFET Product Introduction

The SPB80N03S2L06T-VB is a high-efficiency, low on-resistance N-Channel MOSFET in a TO263 package. It is designed for low-voltage, high-current applications and has excellent current carrying capacity and switching performance. With a maximum drain-source voltage (VDS) of 30V and a maximum drain current (ID) of 98A, this MOSFET is particularly suitable for power management, power tools, and battery-driven systems that require high efficiency and low power consumption. With its low on-resistance (RDS(ON) = 2.7mΩ @ VGS = 4.5V), it can significantly reduce power consumption and heat generation when high current flows, improving the energy efficiency and reliability of the overall system.

The SPB80N03S2L06T-VB uses Trench technology, which has high performance and low conduction loss characteristics, enabling it to achieve efficient current switching under high load conditions. This MOSFET performs particularly well in high-power applications and is suitable for a wide range of uses in power conversion, LED driving, battery management, and more.

File download

Download PDF document
Download now

Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO263 Single-N 30V 1.7V 98A 2.4mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO263 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO263 Single-N 30V 1.7V 98A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO263 Single-N 30V 1.7V 98A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO263 Single-N
SPB80N03S2L06T-VB Detailed parameter description

- **Package**: TO263
- **Configuration**: Single N-Channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 2.7mΩ @ VGS = 4.5V
- 2.4mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 98A
- **Technology type**: Trench

Domain and module applications:

Applications and Modules

SPB80N03S2L06T-VB MOSFET is suitable for multiple applications that require high current, high efficiency and low conduction loss, especially in the fields of power conversion and battery management. Here are some typical application areas:

1. **Power Management Systems**:
Due to its low on-resistance and high current capability, SPB80N03S2L06T-VB is very suitable for power management systems, especially high-efficiency DC-DC converters and AC-DC power modules. The low conduction loss of MOSFET can reduce power waste, improve the efficiency of the entire power system, and reduce the heat generation of the system, extending the service life of components.

2. **Power Tools**:
In power tools, the high current carrying capacity of SPB80N03S2L06T-VB makes it an ideal choice, especially in battery management systems and electric motor drives for power tools. Due to its low on-resistance, it enables fast response and reduces energy losses during battery charging and discharging, thus improving the overall efficiency of the tool.

3. **Battery Management Systems**:
The high current carrying capacity and low conduction losses of the SPB80N03S2L06T-VB make it suitable for efficient battery charge and discharge control in battery management systems. During the battery charging and discharging process, this MOSFET can provide precise and efficient current control, extend the battery life, and ensure stable voltage output when the battery load changes.

4. **EV and Power Tool Charging Systems**:
The charging systems of electric vehicles and power tools require efficient current control devices to manage the high current charging and discharging process. The SPB80N03S2L06T-VB can be used as a switching element in these systems to help improve the efficiency of the charging process and reduce heat generation, ensuring the safety and reliability of the charging system.

5. **LED Driver Systems**:
Due to its low on-resistance, the SPB80N03S2L06T-VB is suitable for use in high-power LED driver systems. The MOSFET can help optimize the LED drive current, thereby improving the overall energy efficiency of the system and ensuring that the LED lighting module can still maintain stable operation when working at high brightness.

6. **Telecommunication Power Supplies**:
In communication base stations or other high-load power supply systems, the SPB80N03S2L06T-VB can be used as an efficient current switch to help achieve efficient power conversion and management, ensuring the stable operation of communication equipment. Its low on-resistance and high current carrying capacity can provide excellent performance under various harsh conditions.

7. **Industrial Automation**:
In the field of industrial automation, SPB80N03S2L06T-VB can be used in motor drive systems, servo control systems and other power-intensive equipment. The low conduction loss and high current capability of MOSFET help improve the efficiency and response speed of motor drive, thereby improving the performance of the entire automation system.

* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

Sample Req

QQ

Telephone

400-655-8788

WeChat

WeChat

Topping

Sample Req
Online
Telephone
WeChat