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SPB80N03S2L-06 G-VB Product details

Product introduction:

Product Introduction

SPB80N03S2L-06 G-VB is a high-performance N-channel MOSFET in TO263 package, designed for high-efficiency, high-current and low-power loss applications. It has low on-resistance (R_DS(ON)) and high current handling capability, with a maximum drain-source voltage (V_DS) of 30V and a maximum drain current (I_D) of up to 98A. It is suitable for high-efficiency power supply designs such as power conversion, battery management, power amplification, and switching power supplies. This MOSFET uses advanced Trench technology to provide lower on-resistance, ensuring efficient current transmission and thermal management performance, making it extremely cost-effective in multiple industry applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO263 Single-N 30V 1.7V 98A 2.4mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO263 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO263 Single-N 30V 1.7V 98A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO263 Single-N 30V 1.7V 98A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO263 Single-N
Detailed parameter description

- **Model**: SPB80N03S2L-06 G-VB
- **Package type**: TO263
- **Configuration**: Single N-channel MOSFET
- **Maximum drain-source voltage (V_DS)**: 30V
- **Gate-source voltage (V_GS)**: ±20V
- **Throughput voltage (V_th)**: 1.7V
- **On-resistance (R_DS(ON))**:
- 2.7mΩ @ V_GS = 4.5V
- 2.4mΩ @ V_GS = 10V
- **Drain current (I_D)**: 98A
- **Technology type**: Trench technology
- **Maximum power dissipation (P_max)**: Can be calculated according to application conditions
- **Temperature Range**: Operating temperature is typically -55°C to 150°C (depending on the specific application environment)

Domain and module applications:

Application fields and module examples

1. **High-efficiency DC-DC converters**
Due to its extremely low on-resistance (R_DS(ON) of 2.4mΩ), the SPB80N03S2L-06 G-VB is very suitable for high-efficiency DC-DC converters, especially in power conversion applications that require high current and high efficiency. Whether it is power management for battery-powered systems, power tools or high-power electronic devices, this MOSFET can significantly reduce energy loss and improve the operating efficiency of the system.

2. **Battery Management System (BMS)**
In the battery management system, the SPB80N03S2L-06 G-VB can provide efficient charge and discharge control, especially for battery charging circuits that require high current carrying. Its low R_DS(ON) helps reduce energy loss during charging and discharging, improves the charging speed and service life of the battery, and is widely used in electric vehicles (EV), energy storage systems (ESS) and other fields.

3. **Electric vehicle power system**
The power systems of electric vehicles and hybrid vehicles usually require high current and high efficiency. SPB80N03S2L-06 G-VB can significantly improve power management efficiency in these applications due to its excellent current carrying capacity and low on-resistance. It can support power transmission between the battery pack and the drive motor, ensuring efficient and stable distribution of electric energy.

4. **Power modules and industrial applications**
SPB80N03S2L-06 G-VB performs well in industrial applications, especially in situations where high current drive is required. It can be used in industrial power modules, switching power supplies, load switches and other equipment to provide efficient power control and reduce heat loss in the power system. Its high current carrying capacity is particularly suitable for high-power transmission and control systems, such as power tools, robots, electric equipment, etc.

5. **Consumer electronics and communication equipment**
In consumer electronics and communication equipment, SPB80N03S2L-06 G-VB can be used in power conversion modules, wireless base station power supplies, battery protection circuits and other fields. Low on-resistance helps reduce power consumption, improve the working stability and efficiency of the equipment, and is especially suitable for portable devices that require efficient battery management and current control.

6. **Audio amplifiers and power amplifiers**
Due to its ultra-low on-resistance and high current handling capability, SPB80N03S2L-06 G-VB can also be widely used in audio amplifiers and power amplifiers. It can ensure stable current support during high-power operation, reduce system energy loss, and improve the power conversion efficiency and audio output performance of the equipment.

7. **Motor drive and control**
SPB80N03S2L-06 G-VB is also widely used in motor drive systems, especially stepper motors, brushless DC motors (BLDC) and industrial motor drives. Its low on-resistance and high current carrying capacity enable it to stably provide efficient driving current to the motor, ensuring the motor's high efficiency and long life.

* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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